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    TRANSISTOR 2SC380 Search Results

    TRANSISTOR 2SC380 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC380 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2SC3603

    Abstract: 2SC3809
    Text: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating


    Original     		PDF 2SC3809 2SC3809 100/Special: 2SC3603

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2SC380

    Abstract: transistor 2sc380
    Text: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC380 2SC380 transistor 2sc380

    2SC380

    Abstract: transistor 2sc380 2sc380 NPN transistor
    Text: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC380 2SC380 transistor 2sc380 2sc380 NPN transistor

    2SC380

    Abstract: transistor 2sc380
    Text: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC380 2SC380 transistor 2sc380

    2sc380

    Abstract: transistor 2sc380
    Text: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		PDF 2SC380 2sc380 transistor 2sc380

    2SC380

    Abstract: transistor 2sc380 2sc380 NPN transistor
    Text: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		PDF 2SC380 2SC380 transistor 2sc380 2sc380 NPN transistor

    2sc3807

    Abstract: No abstract text available
    Text: Ordering number:ENN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043B Features [2SC3807] 8.0


    Original     		PDF ENN2018A 2SC3807 2043B 2SC3807] VEBO15V) 2sc3807

    2043B

    Abstract: 2SC3808 ITR06043 ITR06044 ITR06045 ITR06046 ITR06047
    Text: Ordering number:ENN2015A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043B Features [2SC3808] 8.0


    Original     		PDF ENN2015A 2SC3808 2043B 2SC3808] VEBO15V) O-126LP 2043B 2SC3808 ITR06043 ITR06044 ITR06045 ITR06046 ITR06047

    a0629

    Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
    Text: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.


    Original     		PDF 2SC3807MP ENA0629 VEBO15V) A0629-4/4 a0629 2SC3807MP A0629-1 VEBO-15V IT11926

    2sc3807

    Abstract: VEBO-15V transistor 2SC3807 2SC3807 equivalent ITR06033 ITR06034 ITR06035 ITR06036
    Text: 2SC3807 Ordering number : EN2018B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807 High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features •


    Original     		PDF 2SC3807 EN2018B VEBO15V) 2sc3807 VEBO-15V transistor 2SC3807 2SC3807 equivalent ITR06033 ITR06034 ITR06035 ITR06036

    2SC3807C

    Abstract: No abstract text available
    Text: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.


    Original     		PDF 2SC3807C ENA0439 VEBO17V) A0439-4/4 2SC3807C

    EN210

    Abstract: 2SC3808 VEBO-15V
    Text: Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043A Features [2SC3808] · Large current capacity IC=2A .


    Original     		PDF EN2105A 2SC3808 2SC3808] VEBO15V) O-126LP EN210 2SC3808 VEBO-15V

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC380TM TRANSISTOR NPN 1. EMITTER FEATURES z High Frequency Amplifier Applications 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2SC380TM

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 2SC3807 TRANSISTOR NPN FEATURES z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage


    Original     		PDF O-126 O-126 2SC3807

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating


    OCR Scan     		PDF 2SC3809 2SC3809

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product perform ance in a w ide operating


    OCR Scan     		PDF 2SC3809 2SC3809

    2SC3804

    Abstract: Transistor C 3199 transistor 431 N 251C transistor 3199 a 431 transistor transistor 431 ab RESISTOR NETWORK MAKE MITSUBISHI
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3804 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION Dimensions in mm OUTLINE DRAWING 2SC3804 is a silicon NPN epitaxial planar-type transistor specifically designed fo r power amplifiers in the 800 ~ 900MHz band range. FEATURES


    OCR Scan     		PDF 2SC3804 2SC3804 900MHz 850MHz, b24ia21 Transistor C 3199 transistor 431 N 251C transistor 3199 a 431 transistor transistor 431 ab RESISTOR NETWORK MAKE MITSUBISHI

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2sc3805

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3805 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC38Q5 TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current VCb = 240V, IE = 0


    OCR Scan     		PDF 2SC3805 2SC38Q5 2sc3805

    "MARKING VO"

    Abstract: 2SA1483 2SC3803
    Text: TO SH IBA 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm VIDEO AMPLIFIER APPLICATIONS 4.6MAX. 1.7MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Transition Frequency : frp = 200MHz (Typ.)


    OCR Scan     		PDF 2SC3803 200MHz 2SA1483 SC-62 "MARKING VO" 2SA1483 2SC3803

    2SA1483

    Abstract: 2SC3803
    Text: TO SH IBA 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm VIDEO AMPLIFIER APPLICATIONS 4.6MAX. 1.7MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Transition Frequency : frp = 200MHz (Typ.)


    OCR Scan     		PDF 2SC3803 200MHz 2SA1483 SC-62 2SA1483 2SC3803