Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SC2458 Search Results

    TRANSISTOR 2SC2458 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2458 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF

    2sa1048 transistor

    Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original
    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SA104

    2sa1048 transistor

    Abstract: 2SA1048 2sc2458 equivalent 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original
    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor 2SA1048 2sc2458 equivalent

    2SC2458

    Abstract: 2sc2458 equivalent 2SA1048
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original
    PDF 2SA1048 2SC2458 100mA, 2sc2458 equivalent 2SA1048

    2sa1048 transistor

    Abstract: 2sc2458 equivalent 2SA1048 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original
    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor 2sc2458 equivalent 2SA1048

    2sa1048 transistor

    Abstract: No abstract text available
    Text: 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended. On special request, these transistors can be


    Original
    PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original
    PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original
    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2sc2458 equivalent

    Abstract: 2SC2458
    Text: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SC2458 100mA, 2sc2458 equivalent 2SC2458

    2sc2458 equivalent

    Abstract: 2SC2458
    Text: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SC2458 100mA, 2sc2458 equivalent 2SC2458

    transistor 2SC2458

    Abstract: 2sc2458 equivalent 2SC2458
    Text: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SC2458 100mA, transistor 2SC2458 2sc2458 equivalent 2SC2458

    2sc2458 transistor

    Abstract: 2sc2458 equivalent 2SC2458
    Text: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF 2SC2458 100mA, 2sc2458 transistor 2sc2458 equivalent 2SC2458

    2sa1048 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC2458 TRANSISTOR NPN 1. EMITTER FEATURES z High Current Capability z High DC Current Gain z Excellent hFE Linearity z Complementary to 2SA1048 2. COLLECTOR


    Original
    PDF O-92S 2SC2458 2SA1048 100mA 2sa1048 transistor

    2sa1048 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1048 TRANSISTOR PNP TO-92S FEATURES High voltage: VCEO=-50V(Min.) z High hFE: hFE=70~400 z Low noise: NF=1dB(Typ.),10dB(Max.) z Complementary to 2SC2458 1. EMITTER


    Original
    PDF O-92S 2SA1048 O-92S 2SC2458 -100mA, -10mA 2sa1048 transistor

    2sa1048 transistor

    Abstract: 2SC2458 2sc2458 equivalent 2SA1048
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1048 TRANSISTOR PNP TO-92S FEATURES High voltage z High hFE z Low noise z Complementary to 2SC2458 1. EMITTER z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    PDF O-92S 2SA1048 O-92S 2SC2458 -100mA, -10mA 2sa1048 transistor 2SC2458 2sc2458 equivalent 2SA1048

    2sa1048 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1048 TRANSISTOR PNP TO-92S FEATURES High voltage z High hFE z Low noise z Complementary to 2SC2458 1. EMITTER z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF O-92S 2SA1048 O-92S 2SC2458 -100mA, -10mA 2sa1048 transistor

    2SC2458

    Abstract: 2sa1048
    Text: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original
    PDF 2SC2458 2SA1048. 2SC2458 2sa1048

    2SC2458

    Abstract: transistor 2SC2458
    Text: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)


    Original
    PDF 2SC2458 2SA1048. 2SC2458 transistor 2SC2458

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC2458

    Abstract: transistor 2SC2458 2SA1048
    Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 Unit in mm High Current Capability : Iç; = 150mA (Max.) High DC Current Gain : hjn;E = 70—700 Excellent hjpg Linearity


    OCR Scan
    PDF 2SC2458 150mA 2SA1048. 2SC2458 transistor 2SC2458 2SA1048

    C 2458

    Abstract: 2SA1048 2SC2458 transistor 2SC2458
    Text: TO SH IBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AMPLIFIER APPLICATIONS LOW NOISE AUDIO AMPLIFIER APPLICATIONS 4.2MAX. High Current Capability : Iç; = 150mA (Max.) High DC Current Gain : 1ife = 70~700


    OCR Scan
    PDF 2SC2458Â 150mA 2SA1048Â -55truments, C 2458 2SA1048 2SC2458 transistor 2SC2458

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 U nit in mm 4.2 MAX. • High C urrent Capability : I q = 150mA (Max.) • High DC C urrent Gain hpE —70—700 • Excellent hpE Linearity :


    OCR Scan
    PDF 2SC2458 150mA 2SA1048.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AM PLIFIER APPLICATIONS LO W NOISE AUDIO AM PLIFIER APPLICATIONS ^ 4.2M AX. . —I High Current Capability Iß = 150mA (Max.) High DC Current Gain hjPE = 70~700


    OCR Scan
    PDF 2SC2458Â 150mA 2SA1048L.

    2SC2458

    Abstract: low noise audio amplifier 2SA1048
    Text: T O S H IB A 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AM PLIFIER APPLICATIONS LO W NOISE AUDIO AM PLIFIER APPLICATIONS 4.2M AX. High Current Capability 10 = 150mA (Max.) High DC Current Gain hEE = 70-700


    OCR Scan
    PDF 2SC2458Â 150mA 2SA1048Â 270Hz, 2SC2458 low noise audio amplifier 2SA1048