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    TRANSISTOR 2SC2001 Search Results

    TRANSISTOR 2SC2001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA,

    Untitled

    Abstract: No abstract text available
    Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA,

    2SC2001

    Abstract: transistor 2sc2001
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, 2SC2001 transistor 2sc2001

    transistor 2sc2001

    Abstract: 2SC2001 2SC2001 transistor
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, transistor 2sc2001 2SC2001 2SC2001 transistor

    2SC2001

    Abstract: No abstract text available
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, 2SC2001

    2SC2001

    Abstract: No abstract text available
    Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2001 100mA 700mA 700mA, 2SC2001

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


    Original     		PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    2SC2001

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SC2001 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83)


    Original     		PDF 2SC2001 700mA, 100mA, 2SC2001

    2SC2001

    Abstract: 2sc2001 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR


    Original     		PDF 2SC2001 100mA 700mA, 30MHz 2SC2001 2sc2001 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR（NPN ） FEATURES Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V BR CBO : 30 TO—92 W （Tamb=25℃） 1. EMITTER


    Original     		PDF 2SC2001 30MHz 270TYP 050TYP

    2SC2001

    Abstract: 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K
    Text: 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  High hFE and low VCE sat hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ) G


    Original     		PDF 2SC2001 100mA 700mA 2SC2001-M 2SC2001-L 2SC2001-K 700mA, 17-Feb-2011 100mA 2SC2001 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K

    2SC2001

    Abstract: 2sc2001 transistor
    Text: 2SC2001 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC2001 100mA 700mA, 30MHz 2SC2001 2sc2001 transistor

    2SC2001

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TO-92 TRANSISTOR NPN FEATURES z High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS(TA=25℃ unless otherwise noted)


    Original     		PDF 2SC2001 100mA) 700mA) 100mA 700mA, 30MHz 2SC2001

    2SC2001

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3


    Original     		PDF 2SC2001 100mA 700mA, 30MHz 2SC2001

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: fr P 2SC2001 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISSIPATION PT=600mW * Complement To 2SA952 * High Hfe And Low Vcesat * Collector-Base Voltage VCBO=30V


    OCR Scan     		PDF 2SC2001 600mW) 2SA952 100mA 700mA 700mA ItH70mA

    transistor 2sc2001

    Abstract: 2SC2001
    Text: NPN SILICON TRANSISTOR 2SC2001 DESC R IP TIO N The 2SC2001 is designed for use in output stage of portable R A D IO and cassette type tape recorder, general purpose applica­ tions. FEATURES • High total power dissipation. PT : 600 mW • High hFE and low V CE sat


    OCR Scan     		PDF 2SC2001 2SC2001 transistor 2sc2001

    tl700

    Abstract: 2SC2001 transistor 2sc2001
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica­ in m illim e te rs inches tions.


    OCR Scan     		PDF 2SC2001 2SC2001 tl700 transistor 2sc2001

    Untitled

    Abstract: No abstract text available
    Text: MCC TO-92 Plastic-Encapsutate Transistors X 1 2SC2001 TRANSISTOR NPN FEATU RES Power dissipation TO-92 Pcm: 0.6W (Tamb=25°C) Collector current 1 .E M I T T E R Icm: 2 .C O L L E C T O R 0 .7 A Collector-base voltage V(BR)C80: 30 V 3 .B A S E Operating and storage junction temperature range


    OCR Scan     		PDF 2SC2001