Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SC PNP Search Results

    TRANSISTOR 2SC PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lc 945 p transistor

    Abstract: 852 d TRANSISTOR lc 945 p transistor NPN 2sc945 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y
    Text: 2SC 945 NFN SILICON PIANAR EPITAXIAL TRANSISTOR 1I o h ! i| '£ ? r - r - . , - í ^ .- - .i '•-ÿ ! « f c * CASE TO-92B 2SC 945 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.


    OCR Scan     		PDF 2SC945 O-92B 2SC945 2SA733. 100mA 200mA 250mW lc 945 p transistor 852 d TRANSISTOR lc 945 p transistor NPN 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y

    2sc2530

    Abstract: 2SA amplifier TRANSISTOR 2SC balast
    Text: F U J IT S U SliCON HIGH SPEED POWER TRANSISTORS 2SC 2530 September 1979 <<* SILICON NPN RING EMITTER TRANSISTOR RET The 2SC 2530 is a silicon NPN M.C.-Head am plifier use transistor fabricated w ith Fujitus's unique Ring Em itter Transistor (RET) technology. RET devices are


    OCR Scan     		PDF 2SC2530 2SC2530 T0-220 10OnA, 2SA amplifier TRANSISTOR 2SC balast

    2sc 945 p transistor

    Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e


    OCR Scan     		PDF 2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC

    transistor BC 945

    Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage


    OCR Scan     		PDF 2sa733. t0-92b 100mA 200mA 250mW transistor BC 945 BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945

    A933A

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.


    OCR Scan     		PDF 2SA1037AK 2SA1576A 2SA1774 2SA933AS 2SA1576A 2SC2412K/ 2SC40S1 4617/2SC 1740S. A933A

    TRANSISTOR 2SC

    Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
    Text: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­


    OCR Scan     		PDF 2SC2522 2SC2523 50jU-A, 300jus TRANSISTOR 2SC transistor 2sc 18 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc

    2SC2526

    Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­


    OCR Scan     		PDF 2SC2525 2SC2526 50juA 300jus 2SC2526 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25

    IC 4556

    Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
    Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.


    OCR Scan     		PDF a23SbOS 62702-F G--14 IC 4556 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939

    2SC2527

    Abstract: fujitsu DC-DC a1077 NPN transistor 2527
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T


    OCR Scan     		PDF 2SC2527 10MHz 2SC2527 fujitsu DC-DC a1077 NPN transistor 2527

    TRANSISTOR D 570

    Abstract: BF 145 transistor transistor bf
    Text: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled


    OCR Scan     		PDF 23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


    OCR Scan     		PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330

    TRANSISTOR G13

    Abstract: c 939 transistor bf 4556 d BF939
    Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.


    OCR Scan     		PDF Q62702-F fl235b05 0Q04557 TRANSISTOR G13 c 939 transistor bf 4556 d BF939

    Q62702-D401

    Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
    Text: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


    OCR Scan     		PDF fl23SbDS Q62702-D395 330/BD Q62702-D401 Q62902-B63 200ps[ 23SbOS Q0043S1 Q62702-D401 TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor

    AF 239 S

    Abstract: AF 239 af239 Germanium power S 239 L siemens
    Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    transistor 1548 b

    Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
    Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 235b05 GGMG72 Q62701-F51 -13Silâ CE-10 aa35b05 af239s transistor 1548 b AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power

    transistor BD 430

    Abstract: 0436L
    Text: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


    OCR Scan     		PDF fl23Sb05 0D043fal 0436L fl335b05 Q0043b2 transistor BD 430 0436L

    2SC2530

    Abstract: balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu
    Text: FUJITSU MIC ROELEC TRON ICS 31E D E3 374*J7b2 ÜDlbSSb 2 ES FMI January 1990 Edition 1.1 : FUJITSU P R O D U C T P R O F IL E : 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with


    OCR Scan     		PDF 2SC2530 35MHz T-33-09 2SC2530 balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu

    TRANSISTOR 2SC

    Abstract: 2SA1077 2SC2527 NPN transistor 2527 high power switching transistor 2sc
    Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2527 Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR RET T h e 2 S C 2 5 2 7 is silicon N PN general purpose, high pow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) techn o lo g y. R E T


    OCR Scan     		PDF 2SC2527 50juA, 300jus TRANSISTOR 2SC 2SA1077 2SC2527 NPN transistor 2527 high power switching transistor 2sc

    Germanium power

    Abstract: gpb19
    Text: 2SC D Bi 023SbOS DÜQ4QÖ3 ^ M S I Z G PNP Germanium UHF Transistor A F2 8 9 _ SIEMENS AKTIENGESELLSCHAF - ~ f-3 l-D 7 AF 2 8 9 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 5 0 B 3 DIN 4 1 8 6 7 plastic package similar to T 0 119. This transistor is particularly intended


    OCR Scan     		PDF 023SbOS Germanium power gpb19

    AF109

    Abstract: AF109R Q60106-X109-R1 small signal germanium transistor AF 109 R
    Text: 2SC D • ÛSBSbOS QQ04Q53 □ « S I E G AF109 R PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF 04053 D " T 2- 3 for AGC input stages up to 260 MHz / ^ 7 A F 109 R is a germanium PNP RF m esa transistor in TO 7 2 ca se 18 A 4 DIN 4 18 76 . T he terminals are electrically insulated from the case.


    OCR Scan     		PDF AF109 Q60106-X109-R1 AF109R Q60106-X109-R1 small signal germanium transistor AF 109 R

    2n3055 npn transistor toshiba

    Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
    Text: 2. Id e n tific a tio n System 2.1 A C) Transistors EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2SC 4289 A 1st 2nd 3rd ST100Q22 SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2SA PNP high-frequency use 2SB PNP low-frequency use


    OCR Scan     		PDF ST100Q22 2N3055 BF422 BU208 2n3055 npn transistor toshiba TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp

    TRANSISTOR 2SC Audio Amplifier Applications

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1805 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 805 POWER AMPLIFIER APPLICATIONS Unit in mm 15.8±0.S i • C om plem en tary to 2SC 4690 • Recommend for 70W High Fidelity Audio Frequency Amplifier output Stage. 3.5 3.6 ±0.2


    OCR Scan     		PDF 2SA1805 TRANSISTOR 2SC Audio Amplifier Applications

    AF379

    Abstract: transistor D 379 AF 379 Q62701-F72 5C p Germanium power CE013
    Text: 2SC D • ÖS3SbD5 0QQ4QÔS 5 « S I E G T - 3t~ O f PNP Germanium RF Transistor AF 379 - SIEMENS AKTIENßESELLSCHAF -for large sig n a l a p p lica tio n s u p to 9 0 0 M H z A F 3 7 9 is a PN P germanium planar RF transistor in 5 0 B 3 DIN 4 1 8 6 7 plastic package


    OCR Scan     		PDF 023SbD5 Q62701-F72 flBES500 voltage11 AF379 transistor D 379 AF 379 Q62701-F72 5C p Germanium power CE013