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    TRANSISTOR 2SB1236 Search Results

    TRANSISTOR 2SB1236 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SB1236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz)


    Original     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 65Max.

    transistor 2SB1236

    Abstract: 2SB1236 2SD1857
    Text: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz)


    Original     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 65Max. -100V 30MHz transistor 2SB1236 2SB1236 2SD1857

    2SB1236A

    Abstract: 2SB1275 2SD1857A 2SD1918 50MHZ
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A !External dimensions (Units : mm) !Features 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ)


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ

    Untitled

    Abstract: No abstract text available
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A !External dimensions (Units : mm) !Features 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ)


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275

    2SB1275

    Abstract: 2SB1236A 2SD1857A 2SD1918 50MHZ
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A

    2SD1918

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1236A. 2SD1857A 2SD1918 SC-63 R0039A

    2SB1275

    Abstract: 2SD1918 2SB127 160V2 2SB1236A 2SD1857A 50MHZ
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A 2SB127 160V2 2SB1236A 2SD1857A 50MHZ

    2SB1236

    Abstract: 2SD1857 transistor 120v
    Text: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zExternal dimensions (Unit : mm)


    Original     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 65Max. 2SB1236 2SD1857 transistor 120v

    2SC4132

    Abstract: No abstract text available
    Text: Power Transistor 120V, 2A 2SC4132 zDimensions (Unit : mm) 2SC4132 4.5 1.6 1.5 2.5 4.0 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.


    Original     		PDF 2SC4132 80MHz) 2SB1236. SC-62 2SC4132

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V)


    Original     		PDF 2SC4132 2SD1857 80MHz) 2SB1236. 2SC4132 2SD1857 SC-62

    2SD2211

    Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 80MHZ) 2SB1275 2SB1236A. 2SD2211 2SD2211 hfe 2SB1236A 2SD1857A 80MHZ T100

    2SD1857A

    Abstract: No abstract text available
    Text: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A


    OCR Scan     		PDF 2SB1236A 2SD1857A 2SB1236A

    2SB1236

    Abstract: 2SD1857 transistor 120v
    Text: 2SB1236 Transistors Power Transistor -120V, - 1 ,5A 2SB1236 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = -1 20V) 2) Low collector output capacitance. (Typ. 30pF at V cb = - 1 0V) D 3) High transition frequency, (fr = 50MHz)


    OCR Scan     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 100ms -50pA -100V 2SB1236 2SD1857 transistor 120v

    2SD1857A

    Abstract: Transistor CD 120 Q
    Text: 2SD1857A Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • high collector breakdown voltage, BVq^ q = 160 V • high transition frequency (fj) and low output capacitance (Cob) • complementary pair with 2SB1236A 2SD1857A (ATV-TV2)


    OCR Scan     		PDF 2SD1857A 2SB1236A Collect120 2SD1857A Transistor CD 120 Q

    2SB1275

    Abstract: 2SB1236A 2SD1918
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB127512SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.


    OCR Scan     		PDF 2SB1275 2SB1236A -160V, 2SB127512SB1236A -160V) 30pFatVcB 50MHz) 2SD1918 /2SD1857A. 2SB1275 2SB1236A

    d2400a

    Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s


    OCR Scan     		PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A d2400a transistor d2400a 2SD1916 2SD1763A SD1763A

    2sd1763

    Abstract: No abstract text available
    Text: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)


    OCR Scan     		PDF 2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763

    D1763

    Abstract: MARKING HRA SC4132 2SD1763 transistor D1857 B1186
    Text: 2SB1236 / 2SB1186 2SC4132 / 2SD185712SD2343 / 2SD1763 Transistors Power Transistor — 120V, — 1.5A 2S B 1236 / 2S B 1186 •F e atu res 1 ) High breakdown voltage. iB V cso — — 120V) 2 ) Low collector output capacitance. (Typ. SO pFatV cB5 — 10V)


    OCR Scan     		PDF 2SB1236 2SB1186 2SC4132 2SD185712SD2343 2SD1763 50MHz) 2SD1857/2SD1763. 2SB11B8 O-220FPwn D1763 MARKING HRA SC4132 2SD1763 transistor D1857 B1186

    d1763a

    Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )


    OCR Scan     		PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 2SD1918/2SD1857A/2SC d1763a d2400a 1763A 2SD1763A D1763 d1857a B 1186a 1569a

    2SD1857

    Abstract: Transistor 2SD1857 2SB1236 2SC4132 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB
    Text: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = 120V) 2) Low collector output capacitance. 2SC4132 (Typ. 20pF at V cb = 10V)


    OCR Scan     		PDF 2SC4132 2SD1857 2SD2343 80MHz) 2SB1236. 2SD1857 Transistor 2SD1857 2SB1236 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB

    2SD1763 transistor

    Abstract: 2SD1763 2SD2343 2SB1166 2SB1186 2SB1236 2SC4132 2SD1857 transistor 120v 40X40X0
    Text: 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors I 120V, —1.5A Power Transistor 2SB1236 / 2SB1186 • A b s o lu t e m axim um ratings (T a = 2 5 'C ) •F e a tu re s 1) H ig h b re a k d o w n v o lta g e . (B V ceo = — 1 2 0 V )


    OCR Scan     		PDF 2SB1236 2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1186 50MHz) 2SD1857/2SD1763. 2SD1763 transistor 2SD1763 2SB1166 transistor 120v 40X40X0

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)


    OCR Scan     		PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F.