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    TRANSISTOR 2SA2073 Search Results

    TRANSISTOR 2SA2073 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA2073 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    C5825

    Abstract: 2SC5825 2SA2073
    Text: Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 R0039A C5825 2SC5825 2SA2073

    c5826

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5826 200mV 2SA2073 C5826 R1120A c5826

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073

    c5826

    Abstract: 2SA2073 2SC5826
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5826 200mV 2SA2073 C5826 c5826 2SA2073 2SC5826

    c5826

    Abstract: 2SC5826 2SA2073 2SA20
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)


    Original     		PDF 2SC5826 65Max. 200mV 2SA2073 C5826 c5826 2SC5826 2SA2073 2SA20

    c5826

    Abstract: 2SA2073 2SC5826
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)


    Original     		PDF 2SC5826 65Max. 200mV 2SA2073 C5826 c5826 2SA2073 2SC5826

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.


    Original     		PDF 2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073

    C5825

    Abstract: transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.


    Original     		PDF 2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073

    a2073

    Abstract: No abstract text available
    Text: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)


    Original     		PDF 2SA2073 200mV 200mA) 2SC5826. A2073 2SA2073 R1120A a2073

    a2073

    Abstract: 2SA2073 Transistor 2sa2073 2SC5826
    Text: 2SA2073 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2073 zDimensions (Unit : mm) ATV 0.5 4.4 0.9 1.0 0.65Max. (1) (2) (3) 2.54 2.54 (1) Emitter (2) Collector (3) Base zApplications High speed switching, Low noise


    Original     		PDF 2SA2073 65Max. -200mV -200mA) 2SC5826. A2073 a2073 2SA2073 Transistor 2sa2073 2SC5826

    A2073

    Abstract: Transistor 2sa2073
    Text: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)


    Original     		PDF 2SA2073 200mV 200mA) 2SC5826. A2073 2SA2073 R1120A A2073 Transistor 2sa2073

    a2073

    Abstract: catalog transistor 2SA2073 2SC5826 Transistor 2sa2073
    Text: 2SA2073 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2073 zFeatures 1) High speed switching. ( tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically. (Typ. : −200mV at IC = −2.0A, IB = −200mA)


    Original     		PDF 2SA2073 -200mV -200mA) 2SC5826. A2073 a2073 catalog transistor 2SA2073 2SC5826 Transistor 2sa2073

    2SA1576UB

    Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
    Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.


    Original     		PDF R0039A 51P6029E 2SA1576UB 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    mn2510

    Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
    Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @


    Original     		PDF OT-223 STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982