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    TRANSISTOR 2N5109 Search Results

    TRANSISTOR 2N5109 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N5109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5109UB

    Abstract: 19500/453 2N5109UBJ 2N5109UBJS 2N5109UBJX
    Text: 2N5109UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109UBJ


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    PDF 2N5109UB MIL-PRF-19500 2N5109UBJ) 2N5109UBJX) 2N5109UBJV) 2N5109UBJS) MIL-STD-750 MIL-PRF-19500/453 -10dB 2N5109UB 19500/453 2N5109UBJ 2N5109UBJS 2N5109UBJX

    JANTX 2N5109

    Abstract: 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


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    PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX

    JANTX 2N5109

    Abstract: No abstract text available
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


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    PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109

    JANTX 2N5109

    Abstract: 2N510
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


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    PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109 2N510

    2n5109

    Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


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    PDF 2N5109 CP214 2N5109 transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor

    2N5109

    Abstract: No abstract text available
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


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    PDF 2N5109 2N5109 200MHz 23-June

    2N5109

    Abstract: high frequency transistor
    Text: 2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 1.0 W @ TA = 25 C O 2.5 W @ TC = 75 C O CHARACTERISTICS


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    PDF 2N5109 2N5109 100mA high frequency transistor

    2N5109

    Abstract: No abstract text available
    Text: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS TA=25°C unless otherwise noted


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    PDF 2N5109 200MHz 200MHz 2N5109

    2N5109

    Abstract: No abstract text available
    Text: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS TA=25°C unless otherwise noted


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    PDF 2N5109 200MHz 200MHz 2N5109

    2n5109

    Abstract: Transistor 2N5109 VCE-15V
    Text: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.


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    PDF 2N5109 100mA, 360mA 200MHz Transistor 2N5109 VCE-15V

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2N5109

    Abstract: CP214 2N5109B chip die npn transistor chip die transistor
    Text: PROCESS CP214 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.5 MILS Base Bonding Pad Area 2.9 x 3.4 MILS Emitter Bonding Pad Area 2.9 x 3.4 MILS


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    PDF CP214 2N5109 2N5109 CP214 2N5109B chip die npn transistor chip die transistor

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    PDF 2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179

    2N5109

    Abstract: No abstract text available
    Text: ^sml-Conaucto'i iPioaucti, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features II • Silicon NPN, To-39 packaged VHF/UHF Transistor


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    PDF 2N5109 To-39 2N5109 15Vdc,

    2n5109

    Abstract: transistor 2N5109
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5109 Online Store 2N5109 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at


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    PDF 2N5109 com/2n5109 2N5109 transistor 2N5109

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:


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    PDF 2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ

    2N5109

    Abstract: 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109
    Text: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: • VHF-UHF amplifier silicon transistor. • Housed in TO-39 case. • Also available in chip form using the 1007 chip geometry.


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    PDF 2N5109 MIL-PRF-19500/453 MIL-PRF-19500/398 2N5109 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109

    2N5109 motorola

    Abstract: transistor 2N5109 c0851 2n5109
    Text: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good


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    PDF 2N5109 abo2-46 2N5109 motorola transistor 2N5109 c0851 2n5109

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TRANSISTOR 2N2950

    Abstract: 2N2950 2N5342 2N3137 transistor 2n4959 2N4427 2N5032 Transistor 2N3866 transistor 2n5109 2N3600
    Text: GENERAL TRANSISTOR CORP 54E D • 3=126001 0 0 0 0 0 7 b M ■ General Transistor Corporation *f “ 3 1" O I 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 * Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR RF APPLICATIONS


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    PDF 312fl001 2N91S 2N2857 2N3600 2N3839 2N5031 2N5032 2N53420 2N5342 2N6304 TRANSISTOR 2N2950 2N2950 2N3137 transistor 2n4959 2N4427 Transistor 2N3866 transistor 2n5109

    2N5109

    Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter
    Text: File No. 281 RF Power T ran sisto rs Solid State Division 2N5109 Silicon N-P-N Overlay Transistor High G ain fo r Line A m p lifie rs in C A T V and M A T V E q uip m en t Features: • High gairvbandwidth product ■ Large dynam ic range ■ Low distortion


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    PDF 2N5109 RCA-2N5109* 2N5109 TA2800. rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter