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    TRANSISTOR 2N2905A Search Results

    TRANSISTOR 2N2905A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N2905A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2905A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905AJ • JANTX level (2N2905AJX)


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    PDF 2N2905A MIL-PRF-19500 2N2905AJ) 2N2905AJX) 2N2905AJV) 2N2905AJS) MIL-STD-750 MIL-PRF-19500/290

    Untitled

    Abstract: No abstract text available
    Text: 2N2905A Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905AJ • JANTX level (2N2905AJX)


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    PDF 2N2905A MIL-PRF-19500 2N2905AJ) 2N2905AJX) 2N2905AJV) 2N2905AJS) 2N2905AJSR) 2N2905AJSF) MIL-STD-750 MIL-PRF-19500/290

    2N290

    Abstract: No abstract text available
    Text: 2N2905AL Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905ALJ • JANTX level (2N2905ALJX)


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    PDF 2N2905AL MIL-PRF-19500 2N2905ALJ) 2N2905ALJX) 2N2905ALJV) 2N2905ALJS) MIL-STD-750 MIL-PRF-19500/290 2N290

    Untitled

    Abstract: No abstract text available
    Text: 2N2905A Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905AJ • JANTX level (2N2905AJX)


    Original
    PDF 2N2905A MIL-PRF-19500 2N2905AJ) 2N2905AJX) 2N2905AJV) 2N2905AJS) 2N2905AJSR) 2N2905AJSF) MIL-STD-750 MIL-PRF-19500/290

    Untitled

    Abstract: No abstract text available
    Text: 2N2905AL Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905ALJ • JANTX level (2N2905ALJX)


    Original
    PDF 2N2905AL MIL-PRF-19500 2N2905ALJ) 2N2905ALJX) 2N2905ALJV) 2N2905ALJS) 2N2905ALJSR) 2N2905ALJSF) MIL-STD-750 MIL-PRF-19500/290

    2N2905a equivalent

    Abstract: 2N2905A 2N2905ACSM
    Text: 2N2905ACSM MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. (0.012) 3 2 • HIGH SPEED SATURATED SWITCHING • CECC SCREENING OPTIONS 0.76 ± 0.15 (0.03 ± 0.006)


    Original
    PDF 2N2905ACSM 2N2905A -150mA -15mA 2N2905a equivalent 2N2905ACSM

    Untitled

    Abstract: No abstract text available
    Text: 2N2905AL Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905ALJ • JANTX level (2N2905ALJX)


    Original
    PDF 2N2905AL MIL-PRF-19500 2N2905ALJ) 2N2905ALJX) 2N2905ALJV) 2N2905ALJS) 2N2905ALJSR) 2N2905ALJSF) MIL-STD-750 MIL-PRF-19500/290

    2N2905AL

    Abstract: 2N2905ALJ 2N2905ALJS 2N2905ALJX
    Text: 2N2905AL Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905ALJ • JANTX level (2N2905ALJX)


    Original
    PDF 2N2905AL MIL-PRF-19500 2N2905ALJ) 2N2905ALJX) 2N2905ALJV) 2N2905ALJS) MIL-STD-750 MIL-PRF-19500/290 2N2905AL 2N2905ALJ 2N2905ALJS 2N2905ALJX

    ic 4541 data sheet

    Abstract: MIL-STD-750 2072 2N2905a equivalent 2N2905A switch circuit 2N2905A 2N2905a JANTX 2N2905AJ 2N2905AJS 2N2905AJV 2N2905AJX
    Text: 2N2905A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905AJ • JANTX level (2N2905AJX)


    Original
    PDF 2N2905A MIL-PRF-19500 2N2905AJ) 2N2905AJX) 2N2905AJV) 2N2905AJS) MIL-STD-750 MIL-PRF-19500/290 ic 4541 data sheet MIL-STD-750 2072 2N2905a equivalent 2N2905A switch circuit 2N2905A 2N2905a JANTX 2N2905AJ 2N2905AJS 2N2905AJV 2N2905AJX

    2N2905

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


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    PDF 2N2905AHR 2N2905AHR 2N2905

    2N2905At

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original
    PDF 2N2905AHR 2N2905AHR 2N2905At

    Untitled

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original
    PDF 2N2905AHR 2N2905AHR

    2N2905AT1

    Abstract: 2N2905AHR st marking code
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


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    PDF 2N2905AHR 2N2905AHR 2N2905AT1 st marking code

    BC108 characteristic

    Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


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    PDF MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


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    PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


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    PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original
    PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237

    Transistor 2N2905A

    Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    Original
    PDF MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


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    PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original
    PDF 70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: BC238B MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value


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    PDF PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA

    transistor 2N5458

    Abstract: BC237 BC848 2N930 NPN transistor FREE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original
    PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 transistor 2N5458 BC237 BC848 2N930 NPN transistor FREE

    BF245 TRANSISTOR

    Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.


    Original
    PDF OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan
    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931