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    TRANSISTOR 257 ISOLATED NPN Search Results

    TRANSISTOR 257 ISOLATED NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 257 ISOLATED NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 714

    Abstract: No abstract text available
    Text: Low Noise Matched Transister Array ICs TT1300 Series DESCRIPTION The TT1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading


    Original     		PDF TT1300 IC 714

    2N7373

    Abstract: JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004
    Text: Spring/Summer 1998 Bipolar Transistors by Carlton B. Mowry, Microsemi PPC, Inc., [email protected] Bipolar transistors have been used in Although only a few space applications for years. There is a examples have been history of device types that are furnished, there are many


    Original     		PDF O-254 O-254 1x105 O-254, 2N7373 JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004

    Untitled

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7637-GA 2N7637 73E-46 50E-28 77E-10 23E-10 20E-02 2N7637-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7637-GA 2N7637 73E-46 50E-28 77E-10 23E-10 20E-02 2N7637-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7635-GA 2N7635 22E-47 91E-27 37E-10 36E-10 50E-02 2N7635-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7639-GA 2N7639 03E-47 72E-28 68E-10 72E-09 00E-02 2N7639-GA

    pt4962

    Abstract: Master Meter-Bus Transceiver IC301 7805 to92 Datasheet tss721 PT 4962 BAT41 equivalent 7805 to92 diode Schottky D501 meter bus
    Text: Meter Bus Application ANALOG-BOARD Revision 5.1 November 1995 Revision 5.1 ANALOG-BOARD for the Meter Bus Application Dear Customer, Texas Instruments would like to thank you for your request for the ANALOG BOARD Revision 5.1 design kits. The following disclaimer applies to these design kits.


    Original     		PDF 89/336/EEC) 1N4148 BC183 IC501 TSS721 OC501 6N136 OC502 6N139 pt4962 Master Meter-Bus Transceiver IC301 7805 to92 Datasheet tss721 PT 4962 BAT41 equivalent 7805 to92 diode Schottky D501 meter bus

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		PDF 2N7639-GA 2N7639-GA 03E-47 72E-28 68E-10 72E-09 00E-02

    Untitled

    Abstract: No abstract text available
    Text: Speed Sensors SENSING AND CONTROL Product Range Guide 1 For innovation that’s well apart, there’s only Honeywell Sensing and Control. With more than 50,000 products ranging from snap-action, limit, toggle, and pressure switches to position, speed, pressure, and airflow sensors, Honeywell Sensing and Control


    Original     		PDF 005911-8-ENâ

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF 2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03

    pnp phototransistor

    Abstract: transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A
    Text: A p p l i c at i o n N o t e AN3009 Phototransistor Switching Time Analysis Authors: Van N. Tran Staff Application Engineer, CEL Opto Semiconductors Robert Stuart, CEL Product Marketing Manager Hardik Bhavsar, San Jose State University Introduction A standard optocoupler provides signal transfer between


    Original     		PDF AN3009 pnp phototransistor transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers ana pc monitors.


    OCR Scan     		PDF BU2523AX IE-06 1E-04 IE-02

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved


    OCR Scan     		PDF BU2522DX

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    ESM4045DF

    Abstract: 258 st FR 9120 ESM4045DV
    Text: 3QE D m 7^5^37 - Q03QM5b 2 S G S-THOMSON SGS-THOMSON - cdM4045DF ESM4045DV T '3 > 3 '3 > 5 NPN DARLINGTON POWER MODULE • HIGH CURRENT POWER B IP O U R MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED


    OCR Scan     		PDF Q03QM5b cdM4045DF ESM4045DV T-91-20 O-240) ESM4045DF 258 st FR 9120

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


    OCR Scan     		PDF bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)

    ITT 2222 npn

    Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
    Text: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


    OCR Scan     		PDF BLU99/SL BLU99 OT122A) BLU99/SL OT122D) ITT 2222 npn ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 ferroxcube wideband hf choke SOT122A

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


    OCR Scan     		PDF 711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


    OCR Scan     		PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P