Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2310FX Search Results

    TRANSISTOR 2310FX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2310FX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 2310fx

    Abstract: 2310fx ST2310FX ic 4440 circuit diagram ST2310 4440 ic circuit diagram ISOWATT218FX
    Text: ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n n n NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS


    Original     		PDF ST2310FX ISOWATT218FX 2310FX TRANSISTOR 2310fx 2310fx ST2310FX ic 4440 circuit diagram ST2310 4440 ic circuit diagram ISOWATT218FX