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    TRANSISTOR 22W Search Results

    TRANSISTOR 22W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 22W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of


    Original     		PDF IB0912L200 IB0912L200 IB0912L200-REV-NC-DS-REV-C bd 142 transistor

    HZIP25

    Abstract: LA47202P F35C
    Text: Ordering number : ENA0508 Monolithic Linear IC LA47202P Four-Channel BTL Power Amplifier for Car Audio Systems Overview The LA47202P is a 4-channel BTL power amplifier IC developed for use in car audio applications. The LA47202P adopts a pure complementary output stage circuit structure with a v-pnp transistor for the high side and an npn transistor for the


    Original     		PDF ENA0508 LA47202P LA47202P A0508-8/8 HZIP25 F35C

    3236A

    Abstract: No abstract text available
    Text: Ordering number : ENA0508 Monolithic Linear IC LA47202P Four-Channel BTL Power Amplifier for Car Audio Systems Overview The LA47202P is a 4-channel BTL power amplifier IC developed for use in car audio applications. The LA47202P adopts a pure complementary output stage circuit structure with a v-pnp transistor for the high side and an npn transistor for the


    Original     		PDF ENA0508 LA47202P LA47202P A0508-8/8 3236A

    IRF 1640 G

    Abstract: IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor
    Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-220 AN-994. IRF 1640 G IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor

    VARISTOR k275

    Abstract: varistor s20k275 05 K275 varistor K275 S20K275 varistor s20 k275 S14K275 capacitor k275 K275 varistor VARISTOR S14 K275
    Text: Calculation Examples 4 Calculation examples 4.1 Switching off inductive loads The discharge of an inductor produces high voltages that endanger both the contact breaker switching transistor and the like and the inductor itself. According to equation 17 the energy stored


    Original     		PDF

    TRANSISTOR 2n65s

    Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
    Text: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification


    Original     		PDF MIL-s-19500/74E MIL-S-19500/74D 2N497, 2N498, 2N656, 2N657 2N656 TRANSISTOR 2n65s 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22

    Untitled

    Abstract: No abstract text available
    Text: PH2729-150M Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH2729-150M

    40N160

    Abstract: IXBF 40N140 IXBF 40N160 40N140
    Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		PDF 40N140 40N160 40N140 40N160 IXBF40 IXBF 40N140 IXBF 40N160

    TRANSISTOR 22W

    Abstract: PH2729-150M j78 transistor
    Text: PH2729-150M Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PDF PH2729-150M TRANSISTOR 22W PH2729-150M j78 transistor

    40N140

    Abstract: 40N160
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings


    Original     		PDF 40N140 40N160 O-247 IXBH40 40N140 40N160

    IXBH 40N160

    Abstract: IXBJ 40N160 40N140 40N160
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C


    Original     		PDF 40N140 40N160 O-268 IXBH40 IXBH 40N160 IXBJ 40N160 40N140 40N160

    indiana general

    Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
    Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


    Original     		PDF S175-50 5-240pF 75-480pF 2700pF F627-9, F625-9, F624-19, F627-8, indiana general F624-19 F627 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9

    2N6798

    Abstract: No abstract text available
    Text: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES


    Original     		PDF 2N6798 00A/mS 300ms 2N6798

    2n6798

    Abstract: 2N6798L 2N6798-JQR-B
    Text: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES


    Original     		PDF 2N6798 2N6798" 2N6798 2N6798-JQR-B 2N6798L 2N6798LCC4 2N6798LCC4-JQR-B 2N6798SMD 2N6798SMD-JQR-B O276AB)

    Untitled

    Abstract: No abstract text available
    Text: Photointerrupter Product Data Sheet LTH-306-22W1 Spec No.: DS-55-97-0027 Effective Date: 07/15/2000 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.


    Original     		PDF LTH-306-22W1 DS-55-97-0027 BNS-OD-FC001/A4 LTH-306-22W1 BNS-OD-C131/A4

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2SD2501

    Abstract: 2SD11 2SC26 2SC2613 25D476A JSC47 25b15 2sd22
    Text: 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range o f H itachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology Planar technology is an optimistion of the mutliexpitaxial planar process. This new technology is


    OCR Scan     		PDF 2SC4744 2SC414S 2SC4747 2SC41% 2SC4T77 2SDE99 2SD2501 2SD2311 2SC231I 2SC2319 2SD11 2SC26 2SC2613 25D476A JSC47 25b15 2sd22

    Transistor TT 2246

    Abstract: TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA981 2SA965
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF /-900MHz, 900MHz. Vct-18V 17c-25 200/unit 250-P00 2SA980 2SA981 Transistor TT 2246 TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA965

    2SB525

    Abstract: transistor 2SB525 2Sd326 2SA707 2SA723 2SB510 2SB514 2SB515
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 10kHz 2SB525 2SB525 transistor 2SB525 2Sd326 2SA707 2SA723 2SB510 2SB514 2SB515

    acrian RF POWER TRANSISTOR

    Abstract: z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662
    Text: 0182998 ACRIAN INC T? DE lOlñSTTfl DOOlOflS 5 | ~ D m w m G EN ER A L 0912-25 D E SC R IP TIO N 25 WATTS - 50 VOLTS 960-1215 MHz The 0912-25 is an internally matched, common base transistor providing 25 watts of pulsed RF output power across the 960-1215 MHz bandwidth. This hermetically


    OCR Scan     		PDF -65to 50VDC acrian RF POWER TRANSISTOR z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662

    2SD627

    Abstract: TI15J 2sb644
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF