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    TRANSISTOR 200 V Search Results

    TRANSISTOR 200 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL73024SEHX/SAMPLE Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, PFL, / Visit Renesas Electronics Corporation
    ISL70024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation

    TRANSISTOR 200 V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD 0508

    Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


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    BLA1011-200; BLA1011S-200 SMD 0508 BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


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    BLA1011-200; BLA1011S-200 PDF

    CD3922

    Abstract: No abstract text available
    Text: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2


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    CD3922 CD3922 PDF

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20L-200
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


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    BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


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    BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


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    BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 PDF

    BLF7G22LS-200

    Abstract: BLF7G22L
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 2 — 28 December 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


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    BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


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    BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 PDF

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


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    BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 BLF7G20 PDF

    BLF7G22LS-200

    Abstract: BLF7G22L BLF7G
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


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    BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L BLF7G PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


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    BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 PDF

    ATC800B

    Abstract: No abstract text available
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


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    BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B PDF

    ATC800B

    Abstract: No abstract text available
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


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    BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B PDF

    BLC6G10-200

    Abstract: BLC6G10LS-200
    Text: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


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    BLC6G10-200; BLC6G10LS-200 BLC6G10-200 6G10LS-200 BLC6G10LS-200 PDF

    diode dual d92

    Abstract: KD621220
    Text: m /HBSX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUdl DsrHnQtOn Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    KD621220 Amperes/1200 diode dual d92 KD621220 PDF

    Untitled

    Abstract: No abstract text available
    Text: m M EREX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    KD621220 Amperes/1200 Inv12) PDF

    KD621K20

    Abstract: No abstract text available
    Text: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    KD621K20 Amperes/1000 KD621K20 PDF

    F 300 R 1200 KF

    Abstract: FZ 76 1000
    Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150


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    15ung F 300 R 1200 KF FZ 76 1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: K W E R E X KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    KD621K20 Amperes/1000 72T4b51 PDF

    F 300 R 1200 KF

    Abstract: No abstract text available
    Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150


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    34032T7 F 300 R 1200 KF PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module


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    2Q0R06KL2/2 34G32T7 D0G2047 PDF

    1BW TRANSISTOR

    Abstract: transistor BU 110 diode sg 69
    Text: F 200 R10 K EUPEC SEE D 34G32T7 0000244 bl3 « U P E C Thermische Eigenschaften Thermal properties Rtwc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1000 V 200 A RthCK


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    34G32T7 JD00244 34D32CI7 1BW TRANSISTOR transistor BU 110 diode sg 69 PDF

    kd424520

    Abstract: d79 motor i3003 a 103 m Transistor
    Text: m /v a x x KD424520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


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    KD424520 Amperes/600 EIC20- kd424520 d79 motor i3003 a 103 m Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ h ~ B 6 tB Dual Darlington Transistor Module 200 Amperes/600 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for


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    KD424520HB Amperes/600 J4b21 PDF