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    TRANSISTOR 1443 Search Results

    TRANSISTOR 1443 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1443 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOt323 marking code 6X

    Abstract: 6n sot-323 marking 6H SC-70
    Text: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


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    PDF MUN5111T1 SC-70/SOT-323 SOt323 marking code 6X 6n sot-323 marking 6H SC-70

    transistor BD 512

    Abstract: IB1012S1100
    Text: Part Number: Integra IB1012S1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S1100 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at


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    PDF IB1012S1100 IB1012S1100 IB1012S1100-REV-NC-DS-REV-A transistor BD 512

    BRA144EMP

    Abstract: BRC114EMP BRC123EMP BRC124EMP BRC143EMP BRC144EMP brc114 DSA003640
    Text: BRC144EMP Series NPN Built-in Resistor Transistor MPAK Series Inverter, Driver, Switching ADE-208-1443B Z Rev.2 Sep. 2001 Features • Built–in Resistor Type • Simplifies Circuit Design • Reduces Board Space • Complementary pair with BRA144EMP series


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    PDF BRC144EMP ADE-208-1443B BRA144EMP BRC144EMP BRC124EMP BRC114EMP BRC143EMP BRC123EMP D-85622 BRC114EMP BRC123EMP BRC124EMP BRC143EMP brc114 DSA003640

    PH16030L

    Abstract: No abstract text available
    Text: PH16030L N-channel TrenchMOS logic level FET Rev. 01 — 24 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


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    PDF PH16030L PH16030L

    Untitled

    Abstract: No abstract text available
    Text: TPIC2603 6ĆCHANNEL SERIAL INTERFACE LOWĆSIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 D Serial Control With Diagnostics D Six Power DMOS Transistor Outputs of NE PACKAGE TOP VIEW 350-mA Continuous Current DRAIN5 DRAIN4 SCLK SDI GND GND


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    PDF TPIC2603 SLIS056A 350-mA

    Untitled

    Abstract: No abstract text available
    Text: TPIC2603 6ĆCHANNEL SERIAL INTERFACE LOWĆSIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 D Serial Control With Diagnostics D Six Power DMOS Transistor Outputs of NE PACKAGE TOP VIEW 350-mA Continuous Current DRAIN5 DRAIN4 SCLK SDI GND GND


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    PDF TPIC2603 SLIS056A 350-mA

    Untitled

    Abstract: No abstract text available
    Text: TPIC2603 6ĆCHANNEL SERIAL INTERFACE LOWĆSIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 D Serial Control With Diagnostics D Six Power DMOS Transistor Outputs of NE PACKAGE TOP VIEW 350-mA Continuous Current DRAIN5 DRAIN4 SCLK SDI GND GND


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    PDF TPIC2603 SLIS056A 350-mA

    TPIC2603

    Abstract: TPIC2603DW TPIC2603DWG4 TPIC2603DWR TPIC2603DWRG4 TPIC2603NE
    Text: TPIC2603 6ĆCHANNEL SERIAL INTERFACE LOWĆSIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 D Serial Control With Diagnostics D Six Power DMOS Transistor Outputs of NE PACKAGE TOP VIEW 350-mA Continuous Current DRAIN5 DRAIN4 SCLK SDI GND GND


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    PDF TPIC2603 SLIS056A 350-mA TPIC2603 TPIC2603DW TPIC2603DWG4 TPIC2603DWR TPIC2603DWRG4 TPIC2603NE

    MS-001

    Abstract: MS-013 TPIC2603 TPIC2603DW TPIC2603DWG4 TPIC2603DWR TPIC2603DWRG4 TPIC2603NE
    Text: TPIC2603 6ĆCHANNEL SERIAL INTERFACE LOWĆSIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 D Serial Control With Diagnostics D Six Power DMOS Transistor Outputs of NE PACKAGE TOP VIEW 350-mA Continuous Current DRAIN5 DRAIN4 SCLK SDI GND GND


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    PDF TPIC2603 SLIS056A 350-mA MS-001 MS-013 TPIC2603 TPIC2603DW TPIC2603DWG4 TPIC2603DWR TPIC2603DWRG4 TPIC2603NE

    Untitled

    Abstract: No abstract text available
    Text: TPIC2603 6ĆCHANNEL SERIAL INTERFACE LOWĆSIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 D Serial Control With Diagnostics D Six Power DMOS Transistor Outputs of NE PACKAGE TOP VIEW 350-mA Continuous Current DRAIN5 DRAIN4 SCLK SDI GND GND


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    PDF TPIC2603 SLIS056A 350-mA

    1N3064

    Abstract: ULN2001A ULQ2003A
    Text: ULQ2003A DARLINGTON TRANSISTOR ARRAY SLIS072 – DECEMBER 1996 D D D D D D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of Logic Interchangeable With ULN2001A Series


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    PDF ULQ2003A SLIS072 500-mA ULN2001A ULQ2003A 1N3064

    darlington pair transistor

    Abstract: ULQ2003A Darlington pair IC schematic diagram DARLINGTON 1N3064 ULN2001A N5 npn transistor cmos open collector array TRANSISTOR 1443
    Text: ULQ2003A DARLINGTON TRANSISTOR ARRAY SLIS072 – DECEMBER 1996 D D D D D D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of Logic Interchangeable With ULN2001A Series


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    PDF ULQ2003A SLIS072 500-mA ULN2001A ULQ2003A darlington pair transistor Darlington pair IC schematic diagram DARLINGTON 1N3064 N5 npn transistor cmos open collector array TRANSISTOR 1443

    Untitled

    Abstract: No abstract text available
    Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


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    PDF TPIC6259 SLIS009A 250-mA

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer


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    PDF BSP110 OT223 0D255D5

    transistor marking code 325

    Abstract: BSP110 marking r8v
    Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer


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    PDF 0G25502 BSP110 OT223 7Z94040 transistor marking code 325 BSP110 marking r8v

    Untitled

    Abstract: No abstract text available
    Text: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)


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    PDF TMS664414, TMS664814, TMS664164 64M-BIT SMOS69Q

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN1441 ~RN1444 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN 1443, RN1444 Unit in mm MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage : V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150 (Typ.) (V C E = —2V, IC = —4mA)


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    PDF RN1441 RN1444 RN1441, RN1442, O-236MOD SC-59

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    MMT4416

    Abstract: No abstract text available
    Text: 34 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC DIODES/OPTO 34C 38235 T '-' J f - '- i - S ' MICRO-T (continued) MMT4416 — N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR • designed for VH F/UHF amplifier applications MAXIMUM RATINGS Rating Unit 30 Vdc


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    PDF MMT4416 MMT4416

    Untitled

    Abstract: No abstract text available
    Text: ULQ2003A DARLINGTON TRANSISTOR ARRAY SLIS072 - DECEMBER 1996 • 500-mA Rated Collector Current Single Output D OR N PACKAGE (TOP VIEW) • High-Voltage Outputs . . . 50 V • Output Clamp Diodes • Inputs Compatible With Various Types of Logic Interchangeable With ULN2001A Series


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    PDF ULQ2003A SLIS072 500-mA ULN2001A

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f l —7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF 900MHz Q62702-F1377 OT-143 fiB35b05 fl23SbOS