T491D476M020AS
Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA0912-250
OT502A
SCA74
613524/06/pp11
T491D476M020AS
TRANSISTOR SMD 2X K
transistor j127
BLA0912-250
T491D226M020AS
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TRANSISTOR ML6
Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain
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BFQ270
OT172A1.
TRANSISTOR ML6
TRANSISTOR ML5
resistor MR25 philips
SFR16T
philips MR25
npn 2222 transistor
ZO 103 MA 75 533
resistor MR25
Miniature Ceramic Plate Capacitors 2222 philips
MR25 resistor
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PBSS4320X
Abstract: PBSS5320X Transistor s44 MLE372
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 25 2003 Dec 15 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor
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M3D109
PBSS4320X
SC-62)
SCA75
R75/02/pp11
PBSS4320X
PBSS5320X
Transistor s44
MLE372
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PBSS4320X
Abstract: PBSS5320X marking S45 MLE371
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 25 2003 Nov 27 Philips Semiconductors Product specification 20 V, 3 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5320X
SC-62)
SCA75
R75/02/pp11
PBSS4320X
PBSS5320X
marking S45
MLE371
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250 B 340 smd Transistor
Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250
OT502A
103itions
250 B 340 smd Transistor
smd JH transistor
BLA0912-250
T491D476M020AS
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Untitled
Abstract: No abstract text available
Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250
OT502A
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NV SMD TRANSISTOR
Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Text: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the
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BLA0912-250
OT502A
NV SMD TRANSISTOR
philips resistor
TRANSISTOR L2
BLA0912-250
T491D226M020AS
T491D476M020AS
TANTALUM SMD CAPACITOR
JTIDS
smd transistor w1
gp3511
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2SC2959
Abstract: 2SA1221 2SC2958
Text: DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power
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2SA1221,
2SC2958
2SC2959
2SA1221/2SC2958
2SA1222/2SC2959
2SC2959
2SA1221
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S7-1200
Abstract: 6ES7222-1BF30-0XB0 transistor power 5w SIMATIC S7-1200 S71200 Siemens Power Connectors simatic siemens SIEMENS SIMATIC S7 siemens power transistor siemens cable s7
Text: 6ES7222-1BF30-0XB0 Page 1 Product data sheet 6ES7222-1BF30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 8 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection
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6ES7222-1BF30-0XB0
S7-1200,
0000000000000000E
-48nics
S7-1200
6ES7222-1BF30-0XB0
transistor power 5w
SIMATIC S7-1200
S71200
Siemens Power Connectors
simatic siemens
SIEMENS SIMATIC S7
siemens power transistor
siemens cable s7
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6ES7222-1BH30-0XB0
Abstract: S7-1200 siemens cable connection s7 siemens simatic s7 power supply power supply LED 5w
Text: 6ES7222-1BH30-0XB0 Page 1 Product data sheet 6ES7222-1BH30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 16 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection
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6ES7222-1BH30-0XB0
S7-1200,
0000000000000000E
6ES7222-1BH30-0XB0
S7-1200
siemens cable connection s7
siemens simatic s7 power supply
power supply LED 5w
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1223 digital transistor
Abstract: UNR1221 UNR1222 UNR1223 UNR1224
Text: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor ● ● ● • UNR1221 UNR1222 UNR1223 UNR1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (1.0) 0.45±0.05 0.55±0.1 3 2 (2.5) Parameter Symbol
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UNR1221/1222/1223/1224
UN1221/1222/1223/1224)
UNR1221
UNR1222
UNR1223
UNR1224
1223 digital transistor
UNR1221
UNR1222
UNR1223
UNR1224
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1223 digital transistor
Abstract: UN1222 UN1223 UN1221 UN1224
Text: Transistors with built-in Resistor UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 1.5 ● ● ● R2 2.2kΩ 4.7kΩ 10kΩ 10kΩ • Absolute Maximum Ratings 3 Symbol Ratings Unit VCBO 50 V Collector to emitter voltage
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UN1221/1222/1223/1224
UN1221
UN1222
UN1223
UN1224
1223 digital transistor
UN1222
UN1223
UN1221
UN1224
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UNR1221
Abstract: UNR1222 UNR1223 UNR1224
Text: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 For digital circuits • Features ● ● ● ● ■ 1.0 0.4 7 R 0. UNR1221 UNR1222 UNR1223 UNR1224 4.1±0.2 0.85 Resistance by Part Number
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UNR1221/1222/1223/1224
UN1221/1222/1223/1224)
UNR1221
UNR1222
UNR1223
UNR1224
UNR1221
UNR1222
UNR1223
UNR1224
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1223 digital transistor
Abstract: UNR1222 UNR1221 UNR1223 UNR1224
Text: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor 2.5±0.1 6.9±0.1 ● ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ UNR1221 UNR1222 UNR1223 UNR1224 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ
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UNR1221/1222/1223/1224
UN1221/1222/1223/1224)
UNR1221
UNR1222
UNR1223
UNR1224
1223 digital transistor
UNR1222
UNR1221
UNR1223
UNR1224
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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k 246 transistor fet
Abstract: subthreshold logic
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9675-55
OT404
1E-02
k 246 transistor fet
subthreshold logic
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118-136 mhz
Abstract: sd1222-6 transistor rf vhf
Text: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor
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SD1222-6
aaGG173
10/if
118-136 mhz
transistor rf vhf
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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Untitled
Abstract: No abstract text available
Text: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS
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RN1221,
RN1222,
RN1223,
RN1224
RN1225,
RN1226,
RN1227
800mA)
RN2221
RN1221
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toshiba ta 1222
Abstract: TRANSISTOR 1221 RN1223
Text: T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER
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RN1221,
RN1222,
RN1223,
RN1224
RN1225,
RN1226,
RN1227
800mA)
RN2221--2227
55MAX.
toshiba ta 1222
TRANSISTOR 1221
RN1223
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Untitled
Abstract: No abstract text available
Text: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC C urrent Gain Low C ollecto r E m itter Saturation Voltage Built in a D am per Diode at E-C D arlingt on TR C om plem ent to KSD 1222 ABSOLUTE MAXIMUM RATINGS
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KSB907
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