Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 10 ZG Search Results

    TRANSISTOR 10 ZG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 10 ZG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 1 — 10 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKV OT666 AEC-Q101

    ZG20

    Abstract: ZG20-3 C250 Transistor AC 141 35 15 rail en 50022 ZG20-2
    Text: PI6-OC Interface relays 141 • Relays with transistor output up to 500 mA / 70 V DC • 35 mm DIN rail mounting, EN 50022; screw terminals 0,2…4 mm2 • Interconncertion strips type ZG20 available Transistor - output Max. switching voltage Min. switching voltage


    Original     		PDF ZG20-1, ZG20-2, ZG20-3. ZG20 ZG20-3 C250 Transistor AC 141 35 15 rail en 50022 ZG20-2

    C250

    Abstract: transistor c 838 PI6-OC
    Text: PI6-OC interface relays 213 • Relays PI6-OC - with transistor output, rated load up to 0,5 A / 70 V DC • 35 mm DIN rail mount, EN 50022, wires connection with screw terminals - 0,2.4 mm2 • Adapted for the co-operation with interconnection strip type ZG20


    Original     		PDF ZG20-1 ZG20-2 ZG20-3 C250 transistor c 838 PI6-OC

    DP6-OC

    Abstract: 5-32VDC C250 DG20
    Text: DP6-OC industrial relays • Relays DP6-OC - with transistor output, rated load up to 0.5 A / 70 V DC • 35 mm DIN rail mount, EN 50022, wires connection with screw terminals - 0.2.4 mm2 • Adapted for the co-operation with interconnection strip type ZG20


    Original     		PDF 32VDC DP6-OC-24VAC/DC DP6-OC-230VAC/DC DG20-1 DG20-2 DG20-3 DP6-OC 5-32VDC C250 DG20

    clamp meter circuit diagram

    Abstract: No abstract text available
    Text: Bulletin No. ZFG/ZCG-B Drawing No. LP0737 Released 12/10 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL ZCG - SINGLE CHANNEL OUTPUT ROTARY PULSE GENERATOR MODEL ZFG and ZGG - SINGLE CHANNEL OUTPUT LENGTH SENSORS (Replaces MODELS RPGC, LSCS and LSCD respectively)


    Original     		PDF LP0737 Ahmedabad-382480 clamp meter circuit diagram

    Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution

    Abstract: No abstract text available
    Text: Bulletin No. ZCH/ZFH-A Drawing No. LP0738 Effective 10/09 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL ZCH - QUADRATURE OUTPUT ROTARY PULSE GENERATOR MODEL ZFH and ZGH - QUADRATURE OUTPUT LENGTH SENSORS (Replaces MODELS RPGQ, LSQS and LSQD respectively)


    Original     		PDF LP0738 Ahmedabad-382480 Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    Q62702-F1359

    Abstract: 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s
    Text: SIEMENS BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF OT-223 Q62702-F1359 900MHz Q62702-F1359 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s

    MARKING 19S

    Abstract: sot marking code ZS
    Text: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1088 OT-89 MARKING 19S sot marking code ZS

    Transistor BFR 135

    Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412

    Untitled

    Abstract: No abstract text available
    Text: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFG19S Q62702-F1359 OT-223 Uni-0-01 fl235bD5 D1517SÃ IS21I2 900MHz aS35bD5

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for


    OCR Scan     		PDF MJE18009/D JF18009 MJE/MJF18009 221D-02 O-220 E69369

    nf950

    Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
    Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


    OCR Scan     		PDF 023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3

    RETICON ccd

    Abstract: No abstract text available
    Text: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli­ cations. This product family provides unparalleled performance


    OCR Scan     		PDF 2048-Element 2048-elements, RL0256PAQ-011 RL0512PAQ-011 RL1024PAQ-011 RL2048PAQ-011 RETICON ccd

    K77 transistor

    Abstract: No abstract text available
    Text: 7U0 ifr S e / U > 3 s h ^ - k p u - r SHINDENGEN SILICON DARLINGTON TRANSISTOR ARRAY SILICON DIODE ARRAY m m jcT-iiX 'i -y a- *< n m m .m .7 £ $ :zg L L x f c i j ,


    OCR Scan     		PDF

    e13009

    Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    OCR Scan     		PDF MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO Pin : R F IN P U T V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d . DC S U P P L Y ®PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)


    OCR Scan     		PDF M57789 889-915MHz,

    transistor 12w

    Abstract: M57789
    Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted


    OCR Scan     		PDF M57789 889-915MHz, transistor 12w M57789

    3268

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH50 Designer's Data Sheet POWER TRANSISTOR 4 AMPERES BOO VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH50 has an application specific s ta te -o f-a rt die designed for use In 50 Watts HALOGEN electronic transformers and switchmode applications.


    OCR Scan     		PDF BUH50 BUH50 21A-06 O-220AB VCC-15Volt8 3268