Untitled
Abstract: No abstract text available
Text: Y TED Hygienischer Druckschalter Eigenschaften -1 … 0 bar bis 0 … 25 bar Robustes Edelstahlgehäuse für raue Umgebungsbedingungen Eigensichere Ausführung (LCIE 03 ATEX 6300 X) Zwei Ausgänge mit Schaltfunktion (PNP-Transistor oder galvanisch
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0A4B
Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
DS00529E-page
0A4B
keypad 4x4 7 segment display
4x4 matrix keypad membrane
4x4 matrix keypad and microcontroller
4X4 HEX KEY PAD
keypad membrane 4X4
LTC3710G
hex keypad
4x4 hex keypad
7 segment display 4x4 keyboard
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IXBH12N300
Abstract: IXBT12N300
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBT12N300
IXBH12N300
IC110
O-268
IC110
O-247
12N300
IXBH12N300
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C-48U
Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING
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MIL-PRF-19500/455C
MIL-S-19500/455B
2N5664,
2N5665,
2N5666,
2N5666S,
2N5667,
2N5667S
C-48U
2N2666
JANTXV 2N5664 equivalent
2N5665
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4X4 HEX KEY PAD
Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
4X4 HEX KEY PAD
keypad membrane 4X4
4x4 hex keypad with microcontroller
4x4 hex keypad
hex keypad
4-DIGIT 7-SEGMENT LED DISPLAY
AN529
LTC3710G
061c
065B
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DD 127 D TRANSISTOR
Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/556F
MIL-S-19500/556E
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U
DD 127 D TRANSISTOR
MARKING CODE 556f
2N6782
2N6782U
2N6784
2N6786
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2N6796
Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557F
MIL-S-19500/557E
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
2N6796
2N6796U
2N6798
2N6798U
2N6800
2N6800U
2N6802
2N6802U
c 2811 transistor
irff130 marking
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4x4 matrix keypad in pic with c code
Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
D-81739
4x4 matrix keypad in pic with c code
108 046f
keypad 4x4 c code for dspic
4X4 HEX KEY PAD
keypad membrane 4X4
big 4-digit seven segment led display pic
4x4 matrix keypad dspic
LTC3710G
4x4 hex keypad
keypad 4x4 c code for pic
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2N4405
Abstract: 3TF50 QPL-19500
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 February 2000. INCH-POUND MIL-PRF-19500/448B 3 February 1999 SUPERSEDING MIL-S-19500/448A USAF 29 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
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MIL-PRF-19500/448B
MIL-S-19500/448A
2N4405
MIL-PRF-19500.
2N4405
3TF50
QPL-19500
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RG 2006
Abstract: 2N6788 2N6792 2N6790 2N6794
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 March 1998. INCH POUND MIL-PRF-19500/555G 08 December 1997 SUPERSEDING MIL-S-19500/555F 31 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/555G
MIL-S-19500/555F
2N6788,
2N6788U,
2N6790,
2N6790U,
2N6792,
2N6792U,
2N6794
2N6794U
RG 2006
2N6788
2N6792
2N6790
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LTC1642AIGN
Abstract: 01642a 1N4705 2N2222 FDS6630A LTC1642A LTC1642ACGN 13.85V OFFSET
Text: LTC1642A Hot Swap Controller U FEATURES DESCRIPTIO • The LTC 1642A is a 16-pin Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. Using an external N-Channel pass transistor, the board supply voltage can be ramped up at an
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LTC1642A
16-pin
LTC1421
LTC4211
LT4250
LTC1643
1642af
LTC1642AIGN
01642a
1N4705
2N2222
FDS6630A
LTC1642A
LTC1642ACGN
13.85V OFFSET
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2SB1588
Abstract: No abstract text available
Text: i, L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1588 Silicon PNP Darlington Power Transistor ("^011)93 •VWH yr DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation VoltagePIN 1.BASE
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2SB1588
2SD2439
-160V
2SB1588
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Untitled
Abstract: No abstract text available
Text: LTC1642A Hot Swap Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1642A is a 16-pin Hot SwapTM controller that allows a board to be safely inserted and removed from a live backplane. Using an external N-Channel pass transistor, the board supply voltage can be ramped up at an
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LTC1642A
16-pin
LTC1421
LTC4211
LT4250
LTC1643
1642af
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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army sc-c-179495
Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De partments and Agencies o f the Department o f Defense.
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MIL-S-19500/44D
MIL-S-19500/44C
2N428
000-hour
MIL-S-19500,
MIL-S-19500
army sc-c-179495
2N426
2N428
germanium transistor ac 127
STT 433
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NE8563S
Abstract: 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: iT = 7 G H z • LOW NOISE FIGURE: 1.1 dB at 1 G H z • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 C H IP • LOW COST
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NE856
NE8563S
2SC 2625 transistor
321 CJ 7121
SL 0380 R
E8560
ic SL 1626
NE85634-F
ic 7442
2sc 1027 transistor
transistor 2SC 1222
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K 2056 transistor
Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
Text: MIL -£ -19500/4D 1 Ü November 1966 SUPERSEDING MIL-S-19500/4C 17 January 1962 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This specification is mandatory for use by all D epart ments and Agencies of the Department of Defense.
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-19500/4D
MIL-S-19500/4C
2N331
2N331.
K 2056 transistor
pnp germanium transistor
BUL 3810
2N331
Germanium Transistor
2N3317
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2N498
Abstract: 2N497 2N497S 2N498S 2N65 2N656S 2N657S transistor 2N656
Text: MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON* M F n r i i M - P n U F n ^ tV p 'eV VN4 97 , ' Y nV9~8 ,* 2N 6 56Y N 6577 ' ZN497S, 2N498S, 2N656S, 2N657S
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MIL-S-19500/74E
2N498,
2V657
2N497S,
2N498S,
2N656S,
2N657S
MIL-S-19500/74E,
2N497"
2N497S"
2N498
2N497
2N497S
2N498S
2N65
2N656S
2N657S
transistor 2N656
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.809 International IG R Rectifier IRFI2 6 0 HEXFET TRANSISTOR N-CHANNEL Product Summary 200Volt, 0.060Q, HEXFET H E X F E T technology Is the key to International Rectifier’s advanced line of power M OSFET transis tors. The efficient geometry design achieves very
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200Volt,
IRFI260
GGSS41Ã
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OC 74 germanium transistor
Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart m ents and Agencies of the Department of Defense.
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MIL-S-19500/125C
-S-19500/125B
2N1500
OC 74 germanium transistor
2N1500
pnp germanium transistor
NEW JERSEY SEMICONDUCTOR uz
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1SS SOT-23
Abstract: NDS0605 SFs SOT23
Text: April 1995 N D S0605 P-Channel Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.
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NDS0605
NDS0605
OT-23
1SS SOT-23
SFs SOT23
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2N651A
Abstract: 2N650A WE VQE 23 F 175C 2N652A 2n85
Text: M IL -S -19300/175C 10 October 1958 SUPERSEDING M IL -S -19500/175B 2 July 1384 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, L O w -PO w EK TYPES 2N650A, 2N651A, AND 2N652A Thi» specification is m andatory fo r u se b y a ll D ep art
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MIL-S-19500/
MIL-S-19500/175B
2N650A,
2N651A,
2N652A
2N651A
2N650A
WE VQE 23 F
175C
2N652A
2n85
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2N1305
Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2N1308 2n1308 jan transistor 2N1309
Text: M IL -S -1 9500/126C 24 March 1971 SUPERSEDING M IL -S-195 0 0 /1 26B 20 March 1904 * MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306, 2N1308 AND PNP TYPES 2N1303, 2N1305, 2N1307, 2N1309 This sp ecification is mandatory for u se by a ll D epart
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MIL-S-19500/126C
MIL-S-19500/126B
2N1302,
2N1304,
2N1306,
2N1308
2N1303,
2N1305,
2N1307,
2N1309
2N1305
J1 TRANSISTOR
2N1304
Application of 2n1304
2N1307
2N1303
2N1309
2n1308 jan
transistor 2N1309
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