SSD1606
Abstract: No abstract text available
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.
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SSD1606
SSD1606
11-May-11
17-Oct-11
2002/95/EC
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TDA 9361 PS
Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device
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STD130
STD130
24nW/MHz
ARM920T/ARM940T,
TDA 9361 PS
tda 2974
LD5Q
ci 8602 gn block diagram
TDA 2265
5.1 AUDIO AMP TDA 2030
TDA 7877
TDA 0200
circuit TDA 9594
TDA 2088
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SMC9-65608EV-45SB
Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C
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M65608E
M65608o
4151K
SMC9-65608EV-45SB
M65608E
MMDJ-65608EV-30
MMDJ-65608EV-45
SB32
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A5C 104K
Abstract: ESA/SCC 3901 MIL-PRF-28861 hr 821K 3kv ceramic capacitor ckr06 ceramic capacitor marx generator BT 2258 diode cc 3053 SM 686 16V cc 3053
Text: A KYOCERA GROUP COMPANY AVX Military Products Military Products AVX Military Qualified Products Listing Table of Contents Multilayer Ceramic Leaded Capacitors – Military Cross Reference. . . . . . . . . . . . . . . . . 3-31 MIL-PRF-39014 M, P, R and S Failure Rate Level
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MIL-PRF-39014
MIL-PRF-11015
MIL-PRF-20
S-MIL00M503-N
A5C 104K
ESA/SCC 3901
MIL-PRF-28861
hr 821K 3kv ceramic capacitor
ckr06 ceramic capacitor
marx generator
BT 2258
diode cc 3053
SM 686 16V
cc 3053
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3,6v sl-386
Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Text: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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KG80/KGM80
3,6v sl-386
transistor SL-100
tda 9592
FD6S
ao21
KG80
KGM80
equivalent transistor S 2000N
CL 473
kt 501
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TDA 7378
Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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STD80/STDM80
notice10.
TDA 7378
TDA 7822
block diagram baugh-wooley multiplier
tda 12062
equivalent for tda 4858 ic
free transistor equivalent book
STD-80
4856 a
14 PIN DIP W908
LSI CMOS Technology
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heds 5310
Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»
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reco relay
Abstract: 5 pin relay dc 20v i3001 RELAY 20A 12V
Text: fü HC5526 H A R R IS S E M I C O N D U C T O R August 1998 ITU CO/PABX SU C with Low Power Standby File Num ber 4151.5 Features • Dl M on olithic High Voltage Process T he H C 5526 is a su b scrib e r line interface circu it is co m p lia n t w ith C C IT T standards. E nh an cem e nts include im m u nity to
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HC5526
1-800-4-HARR
reco relay
5 pin relay dc 20v
i3001
RELAY 20A 12V
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417400
Abstract: 77261 T 2109 TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400
Text: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SM KS881A - MAY 1 9 9 5 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical
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TMS416400,
TMS416400P,
TMS417400,
TMS417400P
TMS426400,
TMS426400P,
TMS427400,
TMS427400P
4194304-WORD
SMKS881A-
417400
77261
T 2109
TMS416400
TMS416400P
TMS417400
TMS426400
TMS426400P
TMS427400
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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hd63485
Abstract: HD63484 HD63486CP32 HD63486CP64 F-D31 HD63486 frame buffers gvac BV EI 302 2000 FD31
Text: H D63486-Graphic Video Attribute Controller GVAC Description Pin D escription T h e HD63486 LSI b elo n g s to th e A C R T C ad v an ced C R T co n tro lle r fam ily. It co n v erts fram e b u ffer d a ta to serial video signals. It c o n tain s
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D63486-
HD63486
1s2074\h)
HD63484
E-0045A
AD-E0032A
HD63485
AD-E0122
HD63486CP32
HD63486CP64
F-D31
frame buffers
gvac
BV EI 302 2000
FD31
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SM 4151
Abstract: SM+4151 tr/SM 4151 0/SM 4151
Text: V - F / F - V CONVERTOR NJM 4151 T he NJM4151 provide a simple low-cost m ethod of A /D conversion. They have all the inherent advantages of the voltageto-frequency conversion technique. The output of NJM4151 is a series of pulses of constant duration. T he frequency of
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NJM4151
500mW
300mW
100kfl,
5000pF,
20kHz/V
100kQ
SM 4151
SM+4151
tr/SM 4151
0/SM 4151
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Untitled
Abstract: No abstract text available
Text: HC5526 Semiconductor Datasheet October 1998 ITU CO/PABX SLIC with Low Power Standby File Number 4151.6 Features • D I M onolithic High V o ltag e Process T h e H C 5 5 2 6 is a sub scrib er line interface circuit that is com plian t with C C IT T stan dards. E n h a n c e m e n ts include
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HC5526
1-800-4-HARR
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diode LT UG 1007
Abstract: SM 4151
Text: I I i1— R e a lt im e d o c k /c a le n d a r u IBUS 1, i s " A p r i i ' 1 99 9 P r o d u c t s p e c ific a tio n G e n e ra l d e s c r ip tio n The PC F8563 is a C M O S real-tim e clock/calendar optim ized for low pow er consum ption. A program m able clock output, interrupt output and voltage-low detector
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F8563
diode LT UG 1007
SM 4151
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RF92
Abstract: IRF9Z22 7n20 k 3919 7z mosfet IRF9Z20 T-39
Text: H E 0 I Mä5S4S2 INTERNATIONAL □□Qöb30 3 | Data Sheet No. PD-9.461A RECTIFIER in t e r n a t io n a l r e c t if ie r I O R T -3 9 -1 9 H E X F E T T R A N S I S T O R IRF9Z20 IRF9ZSS S P-CHAN1MEL 50 VOLT POWER MOSFETs -50 Volt, 0.28 Ohm, HEXFET T0-220AB Plastic Package
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T-39-19
T0-220AB
C-384
RF92
IRF9Z22
7n20
k 3919
7z mosfet
IRF9Z20
T-39
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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Untitled
Abstract: No abstract text available
Text: NJM2123 DUAL OPERATIONAL AMPLIFIER WITH SWITCH • GENERAL DESCRIPTION ■ PACKAGE OUTLINE T h e N JM 2 1 2 3 is a o p eratio n al a m p lifie r w ith a n alo g sw itch 2 circuit o f 2 -in p u t/l-o u tp u t . It is applicable to the audio part for V ideo
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NJM2123
NJM2123M
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2650B
Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
Text: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the
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Untitled
Abstract: No abstract text available
Text: HC5526 HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit Features Description • Dl Monolithic High Voltage Process The HC5526 is a subscriber line interface circuit is compliant with CCITT standards. Enhancements include immunity to
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HC5526
HC5526
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: HC5526 HARRIS S E M I C O N D U C T O R S LIC Subscriber Line Interface Circuit January 1997 Features Description • Dl Monolithic High Voltage Process The HC5526 is a subscriber line interface circuit is compliant with CCITT standards. Enhancements include immunity to
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HC5526
HC5526
PBL3764
N4454
200Hz,
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SMD TRANSISTOR 6Cs
Abstract: smd 6CS 4194D KH 6004 pin diagram RM4194 smd transistor 9j ha 11706 RC4194N 2N914 6Cs smd
Text: Raytheon Electronics Semiconductor Division ANALOG RC4194 Dual Tracking Voltage Regulators Features • S im u ltan e o u sly ad ju stab le o u tp u ts w ith one resisto r to ± 42V • L oad c u rre n t - ± 2 0 0 m A w ith 0 .0 4 % load reg u latio n • In tern al th erm al shutdow n a t T j = + 175°C
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RC4194
RC/RM4194
RC4194N
RC4194D
RC4194K
RM4194D
RM4194D/883B
RM4194K
SMD TRANSISTOR 6Cs
smd 6CS
4194D
KH 6004 pin diagram
RM4194
smd transistor 9j
ha 11706
2N914
6Cs smd
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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