2SC1412
Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type
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2SA1037AK
SC-88A
-50/iA
-50pA
--12V,
AC221
2SC1412
VE00
L1102
FMS2A
"dual TRANSISTORs"
transitron
2SC1412K
ums2n
2SC241ZK
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2N3904
Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
Text: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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2N39Q4
VCEOm40V
2N3904
2N3904
2N3904)
2N39D4
2N3304
pc 525
2n3904 225
h 2n3904
2N3904S
2N3903
2N39Q3
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et1600
Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Text: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection
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OCR Scan
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4N25/2<
V1CT6H/62
KK27PH
KK24P
3010PiG
3020P
ET1600
Japanese Transistor
TRANSISTOR P 3
80ng
transistor N J
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PDF
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OA606
Abstract: No abstract text available
Text: /T ra n sisto rs DTB123TK DTB123TK Digital Transistors Includes Resistors 7 f/ T r a n s is to r Switch • • « ä 1) / W T X fflO fiÔ L É r t iK L T t'-S /c tb , ^ fä H / D im e n sio n s (Unit : mm) (1) Emitter (2) Base (3) Collector A m w ftftl-H m ti L T -l >
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OCR Scan
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DTB123TK
SC-59
--10V,
100MHz
--50mA,
OA606
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mosfet low vgs 1A
Abstract: No abstract text available
Text: 2SK1973F5 h y V v 7»$ /Transistors 2SK 1973F5 y ij □ > N f * * Jl MOS K7 > y 2 2 Silicon N-channel MOSFET ^ < y ^ /Switching • i'i-ffi^'Ü H /D im en sio n s U n it: mm 1) 1ft* 2) i S i i X - f v ^ ^ ^ t " — Ko 3) SOA 4) iE i* [is & * ''fs a m o 5)
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2SK1973F5
1973F5
mosfet low vgs 1A
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PDF
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1Ft TRANSISTOR
Abstract: tr/1Ft TRANSISTOR
Text: TOSHIBA TPC8002 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8002 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ßS (ON)“ H -5 m n (Typ.) High Forward Transfer Adm ittance: |Yfs| = 15S (Typ.)
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OCR Scan
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TPC8002
1Ft TRANSISTOR
tr/1Ft TRANSISTOR
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70910
Abstract: transistor cny CNY17F-1X E91231
Text: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a
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OCR Scan
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46fibSlQ
17F-1X,
17F-2X,
17F-3X,
17F-4X
IF-20mA)
70910
transistor cny
CNY17F-1X
E91231
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PDF
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2SC4458
Abstract: No abstract text available
Text: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process
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OCR Scan
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2SC4458
300//s
2SC4458
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PDF
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1518 B TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP8N20E
T0220AB
1518 B TRANSISTOR
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PDF
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f0r1a
Abstract: tt 18934 2SK786 Transistor S1D F0R1 111IN
Text: 6427525 Tfl N E C ELECTRONICS D Ë | b M 27525 INC Ü Q 1 AT34 gsQ 13934 T-39-13 q T . PRELIMINARY SPECIFICATION MOS FIELD EFFECT ELECTRON DEVICE TRANSISTOR 2SK786 FAST SWITCHING N - C H A N N E L S I L I C O N POWER MOS Features Suitable for switching power supplies,
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OCR Scan
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Jb42752S
T-39-13
2SK786
f0r1a
tt 18934
2SK786
Transistor S1D
F0R1
111IN
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PDF
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TC74HC4538P
Abstract: Mono stable
Text: TOSHIBA LO GI C/M EMO RY 116 O I 1017349 QOlfltlS l | TC74HC4538P/F T - S m TC74HC4538P/F DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR The TC74HC4538 Is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2M0S technology. It achieves the high speed operation similar to equivalent
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OCR Scan
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TC74HC4538P/F
TC74HC4538P/F
TC74HC4538
001S1
TC74HC4538P/F-----OUTPUT
TC74BC4538P/F
TC74HC4538P
Mono stable
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16N05L
Abstract: RFD16N05L 16N05
Text: m H a rris uj s e m ic o n d u c to r June 19 9 2 R F D 16N 05 L R F D 16 N 0 5 L S M N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-251 AA TOP VIEW • 1 6 A .5 0 V • r DS(ON) = 0.047Q • UIS SOA Rating Curves (Single Pulse)
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OCR Scan
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O-251
O-252AA
22E-10
1e-30
11E-9
38E-9
0E-12
16N05L
RFD16N05L
16N05
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi
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1285C
IRFY044CM
4A55452
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PDF
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JI32
Abstract: 2SK482 T460 t460 transistor diode sg 5 ts
Text: NEC m ^ T Y = 7 > i > 7 * MOS f v r x Field Effect P ow er Transistor _ 2SK482 FET n im m N-Channel MOS Field E ffect P ow er T ra n s is to r Sw itching Industrial Use 2SK482ii, tfjIiEfcCON-f-v —MOS FET"C, Xj -yj - fl-J & l*]/P A C K A G E DIM ENSIO NS
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2SK482
2SK482Ã
JI32
2SK482
T460
t460 transistor
diode sg 5 ts
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WH025
Abstract: TC-6248
Text: Compound Transistor GN1A4P ^-fi ‘ mm ft m 2.1 ± 0 .1 o '< -i T 7 s ft £ f i;£ [* j$ ( R i = 10 k£2, R 2 = 47 1.2 5 ± 0 .1 kQ) )C O G A 1 A 4 P t =J > 7 ° | J y > ? U T - fé flf- e è M a r k in g (T a = 25 °C) m u 1»S 3 L- 7 7 • 3 ? •''i -
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PWS10
WH025
TC-6248
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PDF
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Untitled
Abstract: No abstract text available
Text: m m o a CM150E3U-24H x Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Chopper IGBTMOD U-Series Module 150 Amperes/1200 Volts Tq Measured Description: -1 = 1 Î c I 1= 1 1= 1 H Powerex Chopper IGBTMOD™ Modules are designed for use in
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OCR Scan
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CM150E3U-24H
Amperes/1200
15697-tBOO
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PDF
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Avantek uto 512
Abstract: ANA 658 Avantek amplifier Avantek* UTC AVANTEK utc Avantek rf amplifier RF power amplifier 49 MHz AVANTEK TO-8 Avantek amplifier UTC
Text: AVANTEK Q INC a v a MME n t b » H . . k HMVîbb 0 0 0 7 e]? 1 !A V A . UTO/UTC 512 Series ,. Thln-Fllm Cascadable Amplifier 5 to 500 MHz o\ FEATURES APPLICATIONS • • • • • IF/RF Amplification Frequency Range: 5 to 500 MHz Medium Gain: 20.0 dB Typ
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OCR Scan
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11415b
0007e]
T-14-oH
Avantek uto 512
ANA 658
Avantek amplifier
Avantek* UTC
AVANTEK utc
Avantek rf amplifier
RF power amplifier 49 MHz
AVANTEK TO-8
Avantek amplifier UTC
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC BIPO LAR LINEAR INTEGRATED CIRCUIT TA8006ASN 5V V O L T A G E R E G U L A T O R W IT H W A T C H D O G T IM E R The TA8006ASN is an 1C specially designed for microcomputer systems. It incorporates a highly accurate coristant-voltage power supply 5 ± 0.1V and various
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OCR Scan
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TA8006ASN
TA8006ASN
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PDF
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K2400F1
Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
Text: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region
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OCR Scan
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DO-15X
-214AA
TQ-202AB
K2400F1
metal halide ignitor circuit
IGNITOR Z 400 M
IGNITOR Z 400 M k
k2401
KZ20D
hid lamp ignitor application notes
HQI-T250W
OSRAM ignitor
ignitor circuit 400
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PDF
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se5020
Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES
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OCR Scan
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2SA1464
2SC3739
se5020
marking R1L
mot-10
2SA1464
2SC3739
2SC373
MECM
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PDF
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2N404
Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
Text: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .
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OCR Scan
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-S-19500/20C
2N404
2N404A
2N404A
2N404.
-19500/20C
MIL-S-19500,
MIL-S-19500
2N404 transistor
OC 74 germanium transistor
germanium transistor 2n404a
J971
2N404 JAN
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PDF
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VPA05
Abstract: No abstract text available
Text: I Ordering number: EN3S26 FBET Hybrid 1C VPM04 Video Pack, Three-channel, RGB Video Output Amplifier for Medium-resolution CRT Displays No. 3526 SA%YO F i / / / .f •j OVERVIEW 4 X . ,.:s ' :v ".vt-Äs. It "X > ' PINOUT The VPM04 is a composite, three-channel, video output
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OCR Scan
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EN3S26
VPM04
VPA05
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PDF
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Untitled
Abstract: No abstract text available
Text: NJL5196K/97K GENERAL PURPOSE PHOTO REFLECTOR • GENERAL DESCRIPTION The NJL5196K/5197K are super miniature and super thin general purpose photo reflectors, which can be soldering by reflow-method. These are compatible to NJL5181K/5183K in the characteristics, and attain high
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OCR Scan
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NJL5196K/97K
NJL5196K/5197K
NJL5181K/5183K
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PDF
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D1302
Abstract: D1303 FM1111 2N2620 D1185 MPF1000 D1103 BFX78 MFE2098 TIXS79
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
2N4092AÃ
2N4093AÃ
2N4094t
2N4095t
CFM13026
ul82t
U182T
RM3036
D1302
D1303
FM1111
2N2620
D1185
MPF1000
D1103
BFX78
MFE2098
TIXS79
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PDF
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