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Abstract: No abstract text available
Text: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TPV8100B/D
TPV8100B
TPV8100B
TPV8100B/D*
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TPV8100B
Abstract: No abstract text available
Text: TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization
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TPV8100B
TPV8100B
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TPV8100B
Abstract: 6 channel rf transmitter circuit ATC 100A
Text: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TPV8100B/D
TPV8100B
TPV8100B
TPV8100B/D*
6 channel rf transmitter circuit
ATC 100A
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BLV861
Abstract: TPV8100B
Text: TPV8100B BLV861 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV861 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization
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TPV8100B
BLV861
BLV861
TPV8100B
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wireless video transmitter circuit
Abstract: Wireless video IC circuit j682
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TPV8100B
wireless video transmitter circuit
Wireless video IC circuit
j682
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TPV8100B
Abstract: tpv8100 414 rf transistor j682
Text: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TPV8100B/D
TPV8100B
TPV8100B
TPV8100B/D*
tpv8100
414 rf transistor
j682
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chip die npn transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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TPV8100B/D
TPV8100B
TPV8100B
TPV8100B/D*
TPV8100B/D
chip die npn transistor
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tpv8100
Abstract: TPV8100B
Text: TPV8100B TPV8100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: PACKAGE STYLE .438X.450 4LFL • Internal Input, Output Matching • Common Emitter Configuration
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TPV8100B
TPV8100
TPV8100
TPV8100B
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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MRF648
Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137
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2N5944
SD1134
MRF859
SD1423
2N5945
2N5946
2N6082
2N6084
2N6439
MHW912
MRF648
TPV3100
TPV-3100
TP9383
SD1393
MRF238 MOTOROLA
MRF188
TP9380
mrf10500
mrf422
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2N5944
2N5945
2N5946
2N6082
2N6084
2N6439
2SC1257
2SC1258
2SC1259
2SC1605A
MRF648
TPV3100
2SC2897
macom
TP3034
SD1393
TP3008
tp9383
transistor 2sC636
MRF255 equivalent
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2SC1257
2SC1258
2SC1259
2SC1605A
2SC1729
2SC1804
2SC1805
2SC1946
2SC1946A
2SC1967
2SC636
2sc635
MHW820-1
TP3008
2SC2897
SD1477
2sc2652
TP3034
2SC1804
SD1470
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stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,
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SG1009Q32005
MMM6025
MC13820
MRF377HR3,
MRF377HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MRF6S9125NR1,
stripline directional couplers
MRFP36030
MRF5S9080NB
NONLINEAR MODEL LDMOS
MRF377HR5
Product Selector Guide
MRF1511NT1 ESD
MC13820
MRF377HR3
MRF6S9045NBR1
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV8100B The RF Line NPN Silicon RF P o w er TVansistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
TPV8100B
8100B
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TPV8100B
Abstract: No abstract text available
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TPV8100B Advance Information The RF Line UHF Linear Power Transistor 100W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . d e sign e d for output sta ge s in Band IV & V T V transmitter am plifiers. Internal m atch
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TPV8100B
TPV8100B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
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b 1367 rf transistor
Abstract: 28V1001
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
TPV8100B
b 1367 rf transistor
28V1001
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n RF P o w e r T ra n sis to r The TPV8100B is designed for output stages in band IV and V TV transm itter amplifiers. It incorporates high value em itter ballast resistors, gold metalliza tions and offers a high degree of reliability and ruggedness.
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TPV8100B
TPV8100B
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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