N3LG
Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L NVD20N03L27 20n3 20N3LG
Text: NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.
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NTD20N03L27,
NVD20N03L27
NTD20N03L27/D
N3LG
SPICE QT 60 CIRCUIT DIAGRAMS
20N3L
MTD20N03L
20n3
20N3LG
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20P03HL
Abstract: 20P-03HL 20p03 AN569 MTD20P03HDL MTD20P03HDL1 MTD20P03HDLT4 20p03h
Text: MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for
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MTD20P03HDL
r14525
MTD20P03HDL/D
20P03HL
20P-03HL
20p03
AN569
MTD20P03HDL
MTD20P03HDL1
MTD20P03HDLT4
20p03h
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AN569
Abstract: NTB30N20 NTB30N20T4 SMD310
Text: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode
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NTB30N20
r14525
NTB30N20/D
AN569
NTB30N20
NTB30N20T4
SMD310
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NTB10N60
Abstract: NTB10N60T4 NTP10N60
Text: NTP10N60, NTB10N60 Preferred Devices Advance Information Power MOSFET 10 Amps, 600 Volts N–Channel TO–220 and D2PAK http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.
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NTP10N60,
NTB10N60
r14525
NTP10N60/D
NTB10N60
NTB10N60T4
NTP10N60
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5n50 mosfet
Abstract: 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310
Text: NTD5N50 Preferred Device Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •
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NTD5N50
r14525
NTD5N50/D
5n50 mosfet
5n50
t5n50
transistor 5N50
NTD5N50T4
NTD5N50-1
AN569
NTD5N50
SMD310
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18n06l
Abstract: AN569 NTD18N06L NTD18N06LT4
Text: NTD18N06L Power MOSFET 18 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications • • •
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NTD18N06L
tpv10
tpv10
r14525
NTD18N06L/D
18n06l
AN569
NTD18N06L
NTD18N06LT4
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NTB45N06
Abstract: NTB45N06T4 NTP45N06
Text: NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • •
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NTP45N06,
NTB45N06
r14525
NTP45N06/D
NTB45N06
NTB45N06T4
NTP45N06
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NTP6N50
Abstract: No abstract text available
Text: NTP6N50 Preferred Devices Product Preview Power MOSFET 6 Amps, 500 Volts N–Channel TO–220 http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 6 AMPERES
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NTP6N50
r14525
NTP6N50/D
NTP6N50
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20N06L
Abstract: AN569 NTD20N06L NTD20N06LT4 SMD310 20n06
Text: NTD20N06L Power MOSFET 20 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications • • •
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NTD20N06L
tpv10
tpv10
r14525
NTD20N06L/D
20N06L
AN569
NTD20N06L
NTD20N06LT4
SMD310
20n06
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15N06
Abstract: AN569 NTD15N06 NTD15N06T4 SMD310
Text: NTD15N06 Power MOSFET 15 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 90 mΩ Typical Applications
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NTD15N06
tpv10
tpv10
r14525
NTD15N06/D
15N06
AN569
NTD15N06
NTD15N06T4
SMD310
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30N20G
Abstract: 30n20 30N2 AN569 NTP30N20 NTP30N20G
Text: NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTP30N20
O-220
tpv10
NTP30N20/D
30N20G
30n20
30N2
AN569
NTP30N20
NTP30N20G
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Untitled
Abstract: No abstract text available
Text: NTB45N06, NTBV45N06 Power MOSFET 45 Amps, 60 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • •
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NTB45N06,
NTBV45N06
NTB45N06/D
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N3LG
Abstract: MTD20N03L 20N3 12Q10 20N3LG 20n3l 369D NTD20N03L27 NTD20N03L27G NTD20N03L27T4G
Text: NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.
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NTD20N03L27
NTD20N03L27/D/D
N3LG
MTD20N03L
20N3
12Q10
20N3LG
20n3l
369D
NTD20N03L27
NTD20N03L27G
NTD20N03L27T4G
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18n06l
Abstract: 18n06 369D AN569 NTD18N06L NTD18N06LT4 SMD310
Text: NTD18N06L Power MOSFET 18 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications Power Supplies Converters Power Motor Controls
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NTD18N06L
tpv10
NTD18N06L/D
18n06l
18n06
369D
AN569
NTD18N06L
NTD18N06LT4
SMD310
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Untitled
Abstract: No abstract text available
Text: NTD3055-094 Power MOSFET 12 A, 60 V, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • • Lower RDS on Lower VDS(on)
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NTD3055-094
NTD3055â
094/D
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NTB30N06
Abstract: NTB30N06G NTB30N06T4 NTB30N06T4G NTP30N06 30N06
Text: NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 30 AMPERES, 60 VOLTS
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NTP30N06,
NTB30N06
O-220
tpv10
NTP30N06/D
NTB30N06
NTB30N06G
NTB30N06T4
NTB30N06T4G
NTP30N06
30N06
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418B-03
Abstract: No abstract text available
Text: NTP12N50, NTB12N50 Preferred Device Advance Information Power MOSFET 12 Amps, 500 Volts N−Channel TO−220 and D2PAK http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.
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NTP12N50,
NTB12N50
O-220
tpv10
NTP12N50/D
418B-03
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Untitled
Abstract: No abstract text available
Text: NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVD Prefix for Automotive and Other Applications Requiring
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NTD3055L170,
NVD3055L170
NTD3055L170/D
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AN569
Abstract: NTP52N10
Text: NTP52N10 Product Preview Power MOSFET 52 Amps, 100 Volts N–Channel Enhancement Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time comparable to a Discrete 52 AMPERES 100 VOLTS 30 mΩ @ VGS = 10 V Fast Recovery Diode • Avalanche Energy Specified
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NTP52N10
tpv10
r14525
NTP52N10/D
AN569
NTP52N10
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Untitled
Abstract: No abstract text available
Text: NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 30 AMPERES, 60 VOLTS
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NTP30N06L,
NTB30N06L
O-220
NTP30N06L
NTB30N06LG
NTB30N06LT4
NTB30N06LT4G
BRD8011/D.
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3170L
Abstract: No abstract text available
Text: NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES, 60 VOLTS RDS on = 170 mW
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NTD3055L170
369AA
3170L
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Untitled
Abstract: No abstract text available
Text: NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB52N10
tpv10
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32N06L
Abstract: No abstract text available
Text: NTD32N06L Power MOSFET 32 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • • • • • Smaller Package than MTB30N06VL
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NTD32N06L
MTB30N06VL
tpv10
NTD32N06L
32N06L
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55094
Abstract: 094G MOSFET NTD3055-094-1G 094G
Text: NTD3055-094 Power MOSFET 12 A, 60 V N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • • Pb−Free Packages are Available
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NTD3055-094
tpv10
NTD3055-094
NTD3055-094G
NTD3055-094-1
NTD3055-094-1G
NTD3055-094T4
NTD3055-094T4G
55094
094G MOSFET
094G
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