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    TOSHIBA NOTE MARKING Search Results

    TOSHIBA NOTE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA NOTE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2855

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2854

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK2855

    Power MOSFET, toshiba

    Abstract: 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW Power MOSFET, toshiba 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW

    TOSHIBA NOTE

    Abstract: 2SK3074
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW TOSHIBA NOTE 2SK3074

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: TCS11SLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11SLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic South-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11SLU

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    Abstract: No abstract text available
    Text: TCS11NLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11NLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11NLU

    Untitled

    Abstract: No abstract text available
    Text: TCS11NLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11NLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11NLU

    Untitled

    Abstract: No abstract text available
    Text: TCS11SLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11SLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic South-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11SLU

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    Abstract: No abstract text available
    Text: TCS10DPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DPU Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole or North-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS10DPU

    Untitled

    Abstract: No abstract text available
    Text: TCS11NLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11NLU Digital Output Magnetic Sensor Feature Open-Drain Output with Inverted Logic North-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11NLU

    Untitled

    Abstract: No abstract text available
    Text: TCS11SLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11SLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic South-Pole Detection UFV Weight: 7 mg typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11SLU

    Untitled

    Abstract: No abstract text available
    Text: TCS11SLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11SLU Digital Output Magnetic Sensor Feature Open-Drain Output with Inverted Logic South-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11SLU

    TCS10DPU

    Abstract: No abstract text available
    Text: TCS10DPU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DPU Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole or North-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS10DPU TCS10DPU

    Untitled

    Abstract: No abstract text available
    Text: TCS11NLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS11NLU Digital Output Magnetic Sensor Features Open-Drain Output with Inverted Logic North-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note 1) GND2 (Note 2)


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    PDF TCS11NLU

    2SK3756

    Abstract: No abstract text available
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    PDF 2SK3756 32dBmW 2SK3756

    2SK3756

    Abstract: MARKING CODE c5 sc-62
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    PDF 2SK3756 32dBmW 2SK3756 MARKING CODE c5 sc-62

    VDE0884

    Abstract: VDE-0884 TLP759
    Text: TOSHIBA TLP759 D4 TOSHIBA PHOTOCOUPLER TLP759(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)\ which are tested under VDE0884 requirements. Ex. : TLP759 (D4-0) Note : Use Toshiba standard type number for safety standard application.


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    PDF TLP759 VDE0884 TLP759, TLP759F TLP759 VDE-0884

    TLP759F

    Abstract: IEC68 TLP759 VDE0109 VDE0884 TLP759F O DVE 0884
    Text: TOSHIBA TLP759 D4 TOSHIBA PHOTOCOUPLER TLP759(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)\ which are tested under VDE0884 requirements. Ex. : TLP759 (D4-0) Note : Use Toshiba standard type number for safety standard application.


    OCR Scan
    PDF TLP759 VDE0884 TLP759, TLP759F TLP759 TLP759F IEC68 VDE0109 TLP759F O DVE 0884