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    TOSHIBA K30A06J3 Search Results

    TOSHIBA K30A06J3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

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    K30A06J3

    Abstract: TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06
    Text: TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3A Switching Regulator Applications z Unit: mm Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK30A06J3A K30A06J3 TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06