Untitled
Abstract: No abstract text available
Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the
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TLP4222G
TLP4222G-2
UL1577,
E67349
11-5B2
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TLP3123
Abstract: No abstract text available
Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.
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TLP3123
TLP3123
54SOP4)
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11-5B2
Abstract: E67349 TLP4222G TLP4222G-2
Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the
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TLP4222G
TLP4222G-2
UL1577,
E67349
TLP4222G
11-5B2
TLP422nclude
11-5B2
E67349
TLP4222G-2
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Untitled
Abstract: No abstract text available
Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.
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TLP3123
TLP3123
54SOP4)
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11-5B2
Abstract: TLP4222G TLP4222G-2 photorelay
Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the
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TLP4222G
TLP4222G-2
TLP4222G
11-5B2
11-5B2
TLP4222G-2
photorelay
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1S43
Abstract: 11-5B2 E67349 TLP4222G TLP4222G-2
Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the
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TLP4222G
TLP4222G-2
UL1577,
E67349
TLP4222G
11-5B2
1S43
11-5B2
E67349
TLP4222G-2
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Untitled
Abstract: No abstract text available
Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.
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TLP3123
TLP3123
54SOP4)
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TLP3123
Abstract: No abstract text available
Text: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.
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TLP3123
TLP3123
54SOP4)
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11-5B2
Abstract: E67349 TLP4222G TLP4222G-2
Text: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the
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TLP4222G
TLP4222G-2
UL1577,
E67349
TLP4222G
11-5B2
11-5B2
E67349
TLP4222G-2
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TLP3122
Abstract: No abstract text available
Text: TLP3122 TOSHIBA Photocoupler PHOTORELAY TLP3122 Measurement Instruments Logic Testers / Memory Testers Board Testers / Scanners Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3122 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.
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TLP3122
TLP3122
54SOP4)
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Untitled
Abstract: No abstract text available
Text: TLP4007G TOSHIBA Photocoupler Photorelay TLP4007G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.
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TLP4007G
TLP4007G
11-10C4
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TLP4027G
Abstract: No abstract text available
Text: TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.
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TLP4027G
TLP4027G
11-10H1
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5dl2c
Abstract: No abstract text available
Text: TOSHIBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive Peak Reverse Voltage
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5DL2C48A
5FL2C48A
U5DL2C48A
U5FL2C48A
5DL2C48A,
5FL2C48A,
U5DL2C48A,
5FL2C48A
5dl2c
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20GL2C
Abstract: No abstract text available
Text: TOSHIBA U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Average Output Rectified Current Ultra Fast Reverse-Recovery Time
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U20GL2C48A
20GL2C
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5dl2c a
Abstract: 5DL2C41A 5dl2c
Text: TOSHIBA 5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C41A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3MAX., • Repetitive Peak Reverse Voltage Vr RM = 200V • Average Output Rectified Current
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5DL2C41A
961001EAA2'
5dl2c a
5DL2C41A
5dl2c
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1N4607
Abstract: SC-40 TOSHIBA 1N4607
Text: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N4607
SC-40
100mA
250mA
350ma
400mA
500mA,
1N4607
SC-40
TOSHIBA 1N4607
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400v 20A ultra fast recovery diode
Abstract: U20GL2C48A
Text: TOSHIBA U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION U n it in mm CONVERTER & CHOPPER APPLICATION 1.32 10.3 MAX. Repetitive Peak Reverse Voltage V r R M = 400V Average Output Rectified Current
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U20GL2C48A
20GL2C
400v 20A ultra fast recovery diode
U20GL2C48A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 10FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 1 QFWJ2CZ47M LO W FORW ARD VOLTAGE SCHOTTKY BARRIER DIODE Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION 10.3MAX., 03.2d 0.2 CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage
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10FWJ2CZ47M
QFWJ2CZ47M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA 8 323 F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free wheeling diode.
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TA8323F
TA8323F
SSOP16
RN5006)
RN6006)
MFP-16
SSOP16-P-225-1
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ST1000EX21
Abstract: transistor JF 1000A diode 5V IGBT 1000A
Text: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package
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ST1000EX21
60MAX.
1250g
ST1000EX21
transistor JF
1000A diode 5V
IGBT 1000A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62M4700F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4700F EXCELLENT LOW SATURATION H-BRIDGE DRIVER TD62M470QF is low voltage use Multi Chip H-Bridge Driver 1C incorporates 4 low saturation discrete Transistors which equipped bias resistor and diode. This 1C is
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TD62M4700F
TD62M470QF
MFP-16
12WER
SSOP16-P-225-1
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diode c48
Abstract: 10DL2C 10DL2C48A 10FL2C48A U10DL2C48A U10FL2C48A 10FL2
Text: TOSHIBA 10DL2C48A, 10FL2C48A#U 10DL2C48A#U 10FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V
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10DL2C48A
10FL2
U10DL2C48A
10FL2C48A
10DL2C48A,
10FL2C48A,
U10DL2C48A,
U10FL2C48A
diode c48
10DL2C
10FL2C48A
U10FL2C48A
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Untitled
Abstract: No abstract text available
Text: 2SD1160 TOSHIBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. @ Built-in Free Wheel Diode
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2SD1160
2SD1160
2SD1160-0
2SD1160-Y
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toshiba diode 2A
Abstract: No abstract text available
Text: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD116Q SWITCHING APPLICATIONS. Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : 0.6V MAX. @ • Built-in Free Wheel Diode MAXIMUM RATINGS (Ta = 25°C)
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2SD1160
2SD116Q
toshiba diode 2A
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