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    TOP MARKING A6 Search Results

    TOP MARKING A6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    TOP MARKING A6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AS5SS256K36

    Abstract: AS5SS256K36A 876-3210
    Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001


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    AS5SS256K36 AS5SS256K36A 100-pin AS5SS256K36 AS5SS256K36ADQ-8 AS5SS256K36A 876-3210 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC


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    AS5SS256K18 AS5SS256K18 AS5SS256K18DQ-8/IT -40oC -55oC 125oC PDF

    BAS16S

    Abstract: VPS05604 4C3 diode
    Text: BAS16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


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    BAS16S OT-363 VPS05604 EHA07193 EHA07291 OT363 Jul-06-2001 EHB00025 BAS16S VPS05604 4C3 diode PDF

    smd transistor A7

    Abstract: smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


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    MT5C2568 28-PIN 100ns -55oC 125oC -40oC A1CW-45/883C MT5C2568ECW-55/883C MT5C2568ECW-70/883C smd transistor A7 smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8 PDF

    VPS05604

    Abstract: No abstract text available
    Text: BAS 16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


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    OT-363 VPS05604 EHA07193 EHA07291 OT-363 Aug-09-1999 EHB00025 EHB00022 VPS05604 PDF

    smd marking "d3"

    Abstract: SMD MARKING A13
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


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    MIL-STD-883 MT5C2568 28-PIN 32-Pin 100ns 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX smd marking "d3" SMD MARKING A13 PDF

    Untitled

    Abstract: No abstract text available
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


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    MIL-STD-883 MT5C2568 28-PIN 32-Pin 100ns 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


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    Si2306DS O-236 OT-23) Si2306DS-T1 08-Apr-05 PDF

    Si2306DS

    Abstract: No abstract text available
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    Si2306DS O-236 OT-23) S-56945--Rev. 23-Nov-98 PDF

    SOT 23 marking code a6 diode

    Abstract: Si2306DS Si2306DS-T1
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


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    Si2306DS O-236 OT-23) Si2306DS-T1 S-31873--Rev. 15-Sep-03 SOT 23 marking code a6 diode PDF

    A6 marking

    Abstract: Si2306DS Si2306DS-T1
    Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code


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    Si2306DS O-236 OT-23) Si2306DS-T1 25lectual 18-Jul-08 A6 marking PDF

    SSRAM

    Abstract: AS5SS256K36
    Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) FEATURES             OPTIONS  MARKING Timing 7.5ns/8.5ns/117MHz 8.5ns/10ns/100MHz 10ns/15ns/66MHz -7.5


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    AS5SS256K36 100-pin 5ns/117MHz 5ns/10ns/100MHz 10ns/15ns/66MHz -55oC 125oC) -40oC 105oC) SSRAM AS5SS256K36 PDF

    Untitled

    Abstract: No abstract text available
    Text: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T


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    T35L6432A 100-pin T35L6432A-5Q T35L6432A-5T PDF

    T35L6432A

    Abstract: No abstract text available
    Text: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T


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    T35L6432A 100-pin T35L6432A-5Q T35L6432A-5T 100-LEAD T35L6432A PDF

    5962-8868101LA

    Abstract: 5962-8868102LA 64K X 4 SRAM 5962-8868103LA
    Text: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


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    MIL-STD-883 MT5C2564 MT5C2564C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C 5962-8868105LA 5962-8868106LA 5962-8868101LA 5962-8868102LA 64K X 4 SRAM 5962-8868103LA PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    MIL-PRF-38534, I/O10 I/O11 I/012 I/O13 I/O14 I/O15 AS8FLC1M32 single120 HIP-66 PDF

    EN29SL160

    Abstract: cFeon EN
    Text: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all


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    EN29SL160 EN29SL160 cFeon EN PDF

    AS8FLC1M32BQT-120/Q

    Abstract: No abstract text available
    Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16


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    AS8FLC1M32 100ns 120ns I/O10 I/O11 I/012 I/O13 I/O14 I/O15 I/O16 AS8FLC1M32BQT-120/Q PDF

    1R SOD-123

    Abstract: A6 SOT-23 SOT 23 A6 on MARKING 1R SOD-123 js u sot-23 BAS 16 MARKING
    Text: BAS 16, BAS16W Silicon Epitaxial Planar Diode 0.55 Fast sw itching diode in case SOT-23, especially suited for autom atic insertion. ^Cathode Mark Top View Marking A6 B î* Top View SOD-123 Plastic Package W eight approx. 0.01 g D im ensions in m m Absolute Maximum Ratings


    OCR Scan
    BAS16W OT-23, OD-123 OT-23) 1R SOD-123 A6 SOT-23 SOT 23 A6 on MARKING 1R SOD-123 js u sot-23 BAS 16 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Diode SOT23 - —y Type Ratings 4“ ^ ^ 500 pcs vR 100 pcs Max Max 'f t rr cD SPECIFICATIONS Part Marking Single Diode BAS16 MMBD914 72-0016 72-0914 52-0016 52-0914 minilfeel 75V 250mA 6nS 2pF A6 100V 200mA 15nS 4pF 5D or D01 Schematic Top View


    OCR Scan
    250mA 200mA BAS16 MMBD914 BAV70 BAW56 BAV99 PDF

    256k x 8 dram

    Abstract: SIMM 30-pin
    Text: MT2D2568 256K X 8 DRAM M ODULE [MICRON DRAM . . 256K x 8 DRAM _ FAST PAGE MODE MT2D2568 LOW POWER, EXTENDED REFRESH (MT2D2568 L) M O DULE IV IV L fU I-L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access


    OCR Scan
    MT2D2568 30-pin 350mW 512-cycle MT2D2568) 30-PinS 256k x 8 dram SIMM 30-pin PDF

    256k 30-pin SIMM

    Abstract: 30-pin simm memory MT8259 30-pin SIMM
    Text: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP


    OCR Scan
    MT8259 30-pin 120mW 1200mW 256k 30-pin SIMM 30-pin simm memory MT8259 30-pin SIMM PDF

    MT9259

    Abstract: 1259EJ
    Text: I^ IIC Z R O N MT9259 256K X 9 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vdd CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PHD DQ8 09 RAS CSS9 D9 Vdd MARKING • Timing 80ns access 100ns access 120ns access 150ns access


    OCR Scan
    MT9259 30-pin 135mW 1350mW MT9259 1259EJ PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period


    OCR Scan
    128ms 24/26-Pin PDF