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    HX8340B

    Abstract: HX8340-B mx 362-0
    Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


    Original     		PDF HX8340-B 176RGB 224October, 225October, HX8340B mx 362-0

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.


    Original     		PDF 850NM HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL

    VCSEL array common anode

    Abstract: No abstract text available
    Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.


    Original     		PDF 850NM HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL VCSEL array common anode

    HX8340-B

    Abstract: diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99
    Text: DATA SHEET DOC No. HX8340-B(T -DS ) HX8340-B(T) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 February, 2008 HX8340-B(T) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


    Original     		PDF HX8340-B 176RGB dummy19 diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99

    29lv160bt

    Abstract: BB 555 MX29LV160BT SA10 SA11 SA12 SA13
    Text: ADVANCED INFORMATION MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection


    Original     		PDF MX29LV160BT/BB 16M-BIT 2Mx8/1Mx16] 100mA 48-Ball MX29LV160BTXEC/BTXEI/BBXEC/BBXEI) PM1041 29lv160bt BB 555 MX29LV160BT SA10 SA11 SA12 SA13

    X5650

    Abstract: X5767 XC7336Q PC44 XC7300 XC7336 XC7336-10
    Text: XC7336 36-Macrocell CMOS EPLD  Product Specifications interconnected by the 100%-populated Universal Interconnect Matrix UIM . Features Ultra high-performance EPLD – 5 ns pin-to-pin speed on all fast inputs – 167 MHz maximum clock frequency Each Fast Function Block has 24 inputs and contains nine


    Original     		PDF XC7336 36-Macrocell XC7336Q 24V9ip 44-Pin to70oC -40oC XC7336 PQ100 PQ160 X5650 X5767 XC7336Q PC44 XC7300 XC7336-10

    laser DFB 1550nm 10mW

    Abstract: 12channel fiber array
    Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.


    Original     		PDF 850NM HFE8004-102, HFE8012-102 HFE80xx-102 1-866-MY-VCSEL laser DFB 1550nm 10mW 12channel fiber array

    HX8347-G

    Abstract: No abstract text available
    Text: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


    Original     		PDF HX8347-G 240RGB 250um 184October,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


    OCR Scan     		PDF TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70 072-WORD TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL 576-bit 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		PDF TC55V1001 F/FT/TR/ST/SR-85 072-WORD TC55V1001F/FT/TR/ST/SR 576-bit 775TYP 32-P-0820-0

    KNC 201 15

    Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
    Text: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9


    OCR Scan     		PDF CHIPS/280 33-MHZ* 33Mhz CPI022 CPIQ22 82C226 100-Pin KNC 201 15 K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF 144-WORD 16-BIT TC554161 FTL-70L TC554161FTL 304-bit 54-P-400-0 62MAX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC554161 FTL-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 3 to


    OCR Scan     		PDF TC554161 FTL-70V 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0 62MAX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		PDF 072-WORD TC55V1001 F/FT/TR/ST/SR-85 TC55V1001F/FT/TR/ST/SR 576-bit 32-P-0820-0 32-P-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates


    OCR Scan     		PDF TC55257DPL/DFL/DFTL/DTRL-55V TC55257DPL/DFL/DFTL/DTRL 144-bit OP28-P-450-1 28-P-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TC554161FTL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF TC554161FTL-70 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0 62MAX

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM


    OCR Scan     		PDF TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70L 072-WORD TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL 576-bit cont50) 32-P-0820-0

    ht321

    Abstract: No abstract text available
    Text: WESTERN DIGITAL CORP 4bE » • ^710220 GG12fci74 ^ m\ùì>c D A T A SH E E T WD7910, WD7910LP System Controller Devices \ WESTERN DIGITAL 9000-2615 WESTERN DIGITAL CORP HbE » ■ iTiaaaa ooi5b7S □ ■ u k -r-SZ ' 33 -65 Copyright 1991 Western Digital Corporation


    OCR Scan     		PDF GG12fci74 WD7910, WD7910LP WD7910/WD7910LP T-52-33-05 ht321

    80286 schematic

    Abstract: fe3031 80286 mouse Western Digital floppy disk FE3021A FE3001a FE3031A CHIPset for 80286 8042 keyboard controller floppy controller
    Text: V m =1710226 O O G b b ll T • UDC " T '5 2 - 3 V 2 . 1 FE3021A Address Buffer and Memory Controller g? WESTERN DIGITAL WESTERN D IG IT A L CORP HOE D H =1716523 aO O bblE 1 HUDC FE3021A TABLE OF C O N TEN TS T-52-33-21 Page P R E F A C E .


    OCR Scan     		PDF FE3021A FE3021A T-52-33-21 J71fl22fl T-52-33-21 132-PIN 80286 schematic fe3031 80286 mouse Western Digital floppy disk FE3001a FE3031A CHIPset for 80286 8042 keyboard controller floppy controller