To5 transistor
Abstract: PIN photodiode 500 nm
Text: DATA SHEET PSS5-7-TO5 SILICON PHOTODIODE TYPE PSS5-7-TO5 PSS5-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 5 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically sealed TO5 case with a glass window. Pacific Silicon Sensor Inc. can also fabricate Silicon
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PSS15-7-TO5
Abstract: PIN photodiode 500 nm TO5 package To5 transistor
Text: DATA SHEET PSS15-7-TO5 SILICON PHOTODIODE TYPE PSS15-7-TO5 PSS15-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 5 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically sealed TO5 case with a glass window. Pacific Silicon Sensor Inc. can also fabricate Silicon
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PSS15-7-TO5
PSS15-7-TO5
PIN photodiode 500 nm
TO5 package
To5 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET WS-7.56-TO5 WAVELENGTH SENSOR WS-7.56-TO5 SPECIAL CHARACTERISTICS • • • • Two p-n junctions constructed vertically Operating range: 450 - 900 nm Spectral resolution: 0.01 nm Specially for monochromatic light PARAMETERS Part No. WS-7.56-TO5
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56-TO5
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PSS10-7-TO5
Abstract: PIN photodiode 500 nm PIN photodiode 300 nm
Text: DATA SHEET PSS10-7-TO5 SILICON PHOTODIODE TYPE PSS10-7-TO5 PSS10-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 10 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically
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PSS10-7-TO5
PSS10-7-TO5
PIN photodiode 500 nm
PIN photodiode 300 nm
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10G APD chip
Abstract: westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram
Text: DATA SHEET PSS-AD500-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD-500-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5
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PSS-AD500-2
PSS-AD-500-2
10G APD chip
westlake capacitors
10G APD
photodiode Avalanche photodiode
Photodiode apd amplifier
avalanche photodiode bias
rise time avalanche photodiode
avalanche photodiode
photodiode Avalanche photodiode APD
500 watts amplifier schematic diagram
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dual photodiode
Abstract: PSS33D-6-TO5 TO5 package PSS33D-6-C
Text: DATA SHEET PSS33D-6-TO5 SILICON PHOTODIODE TYPE PSS33D-6-TO5 PSS33D-6-TO5 is a dual silicon photodiode with an active area of 2.8 mm2 for each half. Dual photodiodes are used in null sensing circuits such as used in electronic balances and line followers. It
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PSS33D-6-TO5
PSS33D-6-TO5
PSS33D-6-C.
dual photodiode
TO5 package
PSS33D-6-C
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Silicon Photodiode Chip
Abstract: TO5 package quadrant photodiode PSS33Q-6-TO5 To5 transistor PSS33Q-6-C rise time of silicon photodiode photodiode chip silicon
Text: DATA SHEET PSS33Q-6-TO5 SILICON PHOTODIODE TYPE PSS33Q-6-TO5 PSS33Q-6-TO5 is a quadrant silicon photodiode chip with an active area of 1.42 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in conjunction with laser beams for alignment and target acquisition. It is mounted in a
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PSS33Q-6-TO5
PSS33Q-6-TO5
PSS33Q-6-C.
Silicon Photodiode Chip
TO5 package
quadrant photodiode
To5 transistor
PSS33Q-6-C
rise time of silicon photodiode
photodiode chip silicon
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6098B
Abstract: TO202 package SW253 SW63-6 PF527 6099B TO218 package CLP-204 6100B to3 HEATSINK
Text: HEATSINKS & MOUNTINGS HEATSINKS TO39/TO5 package TO3 package 5F series PF527 Extruded push-on heatsinks to fit a single TO39/TO5 package. Choice of thermal resistance. Space saving clamp-over heatsink to fit a single TO3 package. Th. Res. Manf. Part No. &
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O39/TO5
PF527
O39/TO5
EAD063NN
EAD063TH
CLIP-04
EAC025HC
EAC038HC
EAC050HC
6098B
TO202 package
SW253
SW63-6
PF527
6099B
TO218 package
CLP-204
6100B
to3 HEATSINK
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TO5 package
Abstract: BUL54A-TO5
Text: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BUL54A-TO5
O205AA)
20-Aug-02
TO5 package
BUL54A-TO5
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geiger apd
Abstract: SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector
Text: SPMMicro Series High Gain APD SPMMicro detectors come in a variety of pin package formats Overview according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types TO46, TO5, TO8 and ceramic packages (TO5
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MIL-STD-750,
1x10-8
geiger apd
SPMMicro3035x13
geiger tube
Geiger
photomultiplier
SPMMicro1020X13
SPMMicro6035X13
helium gas sensor module
PDF PIN APD DIODE DESCRIPTION
pulse metal detector
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10G APD chip
Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a
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PSS-AD500-1
10G APD chip
Photodiode apd amplifier
500 watts amplifier schematic diagram
10G APD
photodiode Avalanche photodiode APD
photodiode Avalanche photodiode APD FOR POWER
avalanche photodiode receiver
AD500
PSS-AD500
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL5N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL5N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package, utilizing a
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-FW5 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can Flat SiO2 window Beam angle 114 deg. Description DUV-FW5 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package, utilizing a flat quartz
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL5NR • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can with reflector Hemispherical SiO2 lens Beam angle 4 deg. Description DUV-HL5NR is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package with integrated
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NTE5408
Abstract: NTE5409 NTE5408 SCR NTE5410 SCR 40A 600V
Text: NTE5408 thru NTE5410 Silicon Controlled Rectifier SCR 3 Amp Sensitive Gate, TO5 Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void−free glass−passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
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NTE5408
NTE5410
NTE5410
NTE5409
NTE5408 SCR
SCR 40A 600V
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet MTCSiCO Integral True Colour Sensor – TO5 with optics Table of contents 1 FUNCTION . 2 2 APPLICATION . 2
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FPGA+Virtex+6+pin+configuration
Abstract: No abstract text available
Text: Preliminary Data Sheet MTCSiCT Integral True Colour Sensor – TO5 with IR blocking Table of contents 1 FUNCTION . 2 2 APPLICATION . 2
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Din 5033
Abstract: colour sensor
Text: Preliminary Data Sheet MTCS3AT 3-element True Colour Sensor – TO5 Table of contents 1 FUNCTION .2 2 APPLICATION .2
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TO5 package
Abstract: Anadigics TO5 packages Photodiode 1550nm sensitivity InGaAs Photodiode 1550nm
Text: PD2M 2mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD2M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD2M-1xx TO5 can Package PRODUCT DESCRIPTION
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NTE941
Abstract: No abstract text available
Text: NTE941 Integrated Circuit Operational Amplifier Description: The NTE941 is a general purpose operational amplifier in an 8–Lead TO5 Metal Can type package and offers many features which make its application nearly foolproof: overload protection on the input
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NTE941
NTE941
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NTE724
Abstract: cascode 12v amp diagram
Text: NTE724 Integrated Circuit Differential/Cascode Amplifier Description: The NTE724 is a differential/cascode amplifier in an 8–Lead TO5 type metal can package designed for use in communications and industrial equipment operating at frequencies from dc to 120MHz.
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NTE724
NTE724
120MHz.
100MHz
400mV
cascode
12v amp diagram
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BMH161
Abstract: F57518 F57515 TO8 package
Text: VOLTAGE CONTROLLED OSCILLATORS Thin film VOLTAGE CONTROLLED OSCILLATORS THIN FILM F57, TO5 & TF5 SERIES Features Operating characteristics • Frequency range: 100 to 5600 MHz • Hermetic package • Temperature range: - 40 to + 100° C Applications Ordering information
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F57XXX:
BMH161
BMH161
F57518
F57515
TO8 package
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TO5 package
Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
Text: PD3M 3mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD3M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD3M-1xx TO5 can Package PRODUCT DESCRIPTION
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"infrared distance sensor" 1997
Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference
Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr
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HEDS-1200
HEDS-1300
HEDS1300
5965-5947E
5966-1624E
"infrared distance sensor" 1997
5966-1624E
Reflective Optical Sensor high resolution
spot light size photodiode
HP transistor cross reference
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