2N2484UA
Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN
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MIL-PRF-19500/376
2N2484UA
2N2484UB
2N2484UBC
500Adc,
30MHz
100kHz
T4-LDS-0058
2N2484UA
2N2484
2N2484UB
50VDC
2N2484UBC
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2N5114
Abstract: 2N5116 2N5115
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 2N5115 2N5116 MQ = JAN Equivalent MX = JANTX Equivalent
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MIL-PRF-19500/476
2N5114
2N5115
2N5116
2N5114,
2N5114
2N5116
2N5115
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2N2907A
Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
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MIL-PRF-19500/291
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907A
2N2906AUBC
2N2907AUB
2N2906A
2N2907A JANTX
2N2907AUBC
10VDC
2N2906AL
2N2906AUA
2N2906AUB
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sst201
Abstract: J201 J202 J204 SST202 SST204 ultra low igss pA
Text: J/SST201 Series New Product Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 –0.3 to –0.9 –25 0.5 0.7 J/SST202 –0.8 to –4 –40 1 0.9
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J/SST201
SST201
SST202
SST204
J/SST201
J/SST202
J/SST204
S-04028--Rev.
04-Jun-01
sst201
J201
J202
J204
SST202
SST204
ultra low igss pA
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37654
Abstract: PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5
Text: PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 JPAD50 SSTPAD5 SSTPAD100 Product Summary Part Number IR Max pA PAD1 –1 PAD5/JPAD5/SSTPAD5 –5 PAD50/JPAD50 –50 SSTPAD100 –100 Features Benefits Applications D Negligible Circuit Leakage Contribution
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PAD50
JPAD50
SSTPAD100
PAD50/JPAD50
P-37654--Rev.
25-Jul-94
37654
PAD5
PAD Series
JPAD50
PAD50
SSTPAD100
diode pico-amp
PAD1
sstpad5
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Untitled
Abstract: No abstract text available
Text: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive
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MSR2N2907AUA
MIL-PRF-19500
2N2907A
EEE-INST-002
T4-LDS-0339-1,
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J111
Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES
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J/SST111
SST111
SST112
SST113
J/SST111
J/SST112
J/SST113
J111
J112
J113
SST111
SST112
SST113
j113 equivalent
4858a
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vcr7n
Abstract: J270 jfets SST271
Text: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000
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O206AA
T0206AA
T0206AF
T0220AA
2N5460
2N5461
2N5462
vcr7n
J270
jfets
SST271
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2N4856
Abstract: No abstract text available
Text: T em ic 2N4856 JAN/JANTX/JANTXV Series siliconix N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV
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2N4856
2N4856JAN
2N4857JAN
2N4858JAN
2N4859JAN
2N4860JAN
2N4861JAN
2N4857
2N4858
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Untitled
Abstract: No abstract text available
Text: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000
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T-31-25
SD2204
O-220AA
SD2204CHP
SD2204BD
-400V,
-500pA
SD1201
-400V
OT-143)
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marking code vishay SILICONIX to-236
Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Text: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA
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PAD50
PAD5Q/JPAD50
SSTPAD100
JPAD50
They50
SSTPAD100
SSTPAD5/100
S-04029--Rev.
04-Jun-01
marking code vishay SILICONIX to-236
marking code vishay SILICONIX to-72
vishay siliconix code marking to-92
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SFs SOT23
Abstract: No abstract text available
Text: 2 AE D • aTl?bUa QaQb4bM 1 H TELEDYNE CO M PO NENTS - T - 3 5 ~ - 2 S - TZ404 SEMICONDUCTOR _ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Pfaatic Package
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TZ404
OT-89
TZ404BD
TZ404CY
SO-16)
OT-143)
SFs SOT23
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digital controlled attenuator
Abstract: d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T
Text: 2flE » • awboa Doot-3is h m TELEDYNE COMPONENTS CDG4460 SEMICONDUCTOR 6-BIT VIDEO FREQUENCY DIGITAL CONTROLLED ATTENUATOR ORDERING INFORMATION 16-Pln Ceram ic Package | CPG4460J FEATURES APPLICATIONS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Data Latch
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CDG4460
16-Pln
CPG4460J
40MHz
CDG4460J
OT-143)
digital controlled attenuator
d82 sot-23
Teledyne Semiconductor
CDG4460
DB3 5T
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CHIP SM 4108
Abstract: SM 4108 sm 4109 un 5111 IC
Text: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ
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CDG2214
C0G2214BJ
CDQ2214AK
100MHz
250MHz
OT-143)
CHIP SM 4108
SM 4108
sm 4109
un 5111 IC
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Untitled
Abstract: No abstract text available
Text: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package
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SD1202
O-226AA
SD1202CHP
SD1202BD
OT-143)
tO921
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s t u 309d
Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
Text: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«
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CDG308,
CDG309
CDG4308,
CDG4309
16-PSl
CD630a0J
CDQ308BJ
CDG309BJ
16-Pfo
CDG303BK
s t u 309d
AMI Semiconductor socket 771
C451
4308B
TLC 771
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ss 7941
Abstract: No abstract text available
Text: EÒE TELEDYNE COMPONENTS D a ii7 b a a — OGOb4Qc] 4 • r T-29-25 SD1106 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD1106CHP SD1106DD SD1106AD Sorted Chips In Waffte Pack TO-2Q6AA TO-18 Package TO-237 Packaae ' FEATURES
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T-29-25
SD1106
O-237
SD1106CHP
SD1106DD
SD1106AD
DO-16)
OT-143)
ss 7941
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CR390
Abstract: No abstract text available
Text: Tem ic CR160 Series S e m i c o n d u c t o r s Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 Product Summary T y p ip mA M in P o v (V) Part Number Typ Ip (mA) Min P o v (V) CR160 1.60 100 CR300 3.00 100
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CR160
CR220
CR300
CR390
CR180
CR240
CR330
CR430
CR200
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Untitled
Abstract: No abstract text available
Text: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP
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14-Pin
SD5100CHP
SD5100N
SD5101CHP
SD5101N
Drivers--SD5100
Drivers--SD5101
SD5100
SO-16)
OT-143)
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Untitled
Abstract: No abstract text available
Text: 2N4856JAN/JANTX/JANTXV Series Vishay Siliconix N-Channel JFETs 2N4856JAN 2N4856JANTX 2N4856JANTXV 2N4857JAN 2N4858JAN 2N4857JANTX 2N4857JANTXV 2N4858JANTX 2N4858JANTXV 2N4859JAN 2N4859JANTX 2N4859JANTXV 2N4860JAN 2N4860JANTX 2N4860JANTXV 2N4861JAN 2N4861JANTX
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2N4856JAN/JANTX/JANTXV
2N4856JAN
2N4857JAN
2N4858JAN
2N4859JAN
2N4860JAN
2N4861JAN
2N4856JANTX
2N4857JANTX
2N4858JANTX
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JR 3610
Abstract: RT 083 206af 44464
Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package
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----------------T-29-25
O-226AA
O-237
808CHP
VP08Q8L
VP1008CHP
VP1008L
VP1008M
-100\i
VP1008
JR 3610
RT 083
206af
44464
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PW 2N
Abstract: SST4393 Q3060 marking 2n sot23 2N4392 4392 ic equivalent PW 2N 150 SST4391
Text: Tem ic 2N/PN/SST4391 Series S e m i c o n d u c l o r s N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 SST4391 PN4392 SST4392 PN4393 SST4393 Product Summary Part Number VGS off (V) r DS(on) Max (Q) iD(off) Typ (pA) to N T V p (n s) 2N/PN/SST4391 - 4 to -10 30
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2N/PN/SST4391
2N4391
2N4392
2N4393
2N/PN/SST4392
2N/PN/SST4393
PN4391
SST4391
PN4392
PW 2N
SST4393
Q3060
marking 2n sot23
4392 ic equivalent
PW 2N 150
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2N3797
Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
Text: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D
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2N3796
2N3797
2N3796
O-206AA)
2N3798
2N3797 MOTOROLA
2N3796 MOTOROLA
2N3798
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2N2844
Abstract: 2N2843
Text: MOTORCLA SC XSTRS/R F 12E D | b3b755M OOflbbOS 1 | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA 3 Drain (Case) MAXIMUM RATINGS Sym bol V a lu s U n it Drain-Source V olta g e Rating VDS 30 V dc Drain-Gate V oltage Vd g 30 V dc Gate-Source V olta g e
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b3b755M
2N2843
2N2844
O-206AA)
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