TN0004
Abstract: TN000401-0603
Text: Technical Note Floating Point Division TN000401-0603 General Overview Arithmetic routines are common in a wide range of embedded applications. From home HVAC systems to industrial process parameter measurement, a certain amount of precise computation is always necessary. 8 bit controllers normally have fixed point arithmetic and
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TN000401-0603
TN0004
TN000401-0603
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Technical Note TN-0004
Abstract: No abstract text available
Text: VISHAY www.vishay.com Tantalum Capacitors Technical Note TN-0004 Guidelines for Replacing Tantalum Capacitors Using a Soldering Iron Printed circuit boards to which no manual repairs have been made are proven to pass testing processes with more success and
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TN-0004
04-May-15
Technical Note TN-0004
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TN0002
Abstract: TN0004 IEEE 754 ieee floating point TN0001
Text: Technical Note Floating Point Routines TN000101-0603 General Overview Arithmetic routines are common in a wide range of embedded applications. From home HVAC systems to industrial process parameter measurement, a certain amount of precise computation is always necessary. 8-bit controllers normally offer fixed-point arithmetic and
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TN000101-0603
TN0002
TN0004
IEEE 754
ieee floating point
TN0001
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30033
Abstract: No abstract text available
Text: LDWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID <P2-P3-P1> i J2-J1 (P 6 -P 5 -P 4 ) i CJ6-J3) 2.0 INDUCTANCE CJ6-J3) (P3-P1) 3.0 LEAKAGE INDUCTANCE P 4 -P 6 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHORT) 4.0 IN TERVIN DIN G CAPACITANCE (P 4 -P 6 ) TD (J 6 J 3 )
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1000PF/2KV
350uH
SI-30033
30033
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30014
Abstract: bosch+30014
Text: LOWER U PP ER ROW ROW ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 - J 1 = (P 2 - J 2 (P 4 —J 4 )= (P 5 —J5 65uH TYP @ 0.1V, 10KHz 65uH TYP @ 0.1V, 10KHz 2.0 DC RESISTANCE: P5-J5; P4-J4; P2-J2; P 1- J1 3.0 COMMON MODE: 0.5 OHM MAX FREQUENCY (MHz)
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10KHz
TN000422XC)
30014
bosch+30014
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Untitled
Abstract: No abstract text available
Text: LDWER ROW 1000PF, 2KV E L E C T R IC A L S P E C IF IC A T IO N S : 1.0 TURNS RA TID P 1 -P 4 -P 2 i (J 1 -J 2 ) ( P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE C P 6 -P 3 ) (P 2 -P 1 ) 3.0 LEAK A G E INDUCTANCE P 6 - P 3 (W ITH J6 AND J 3 SHORT) P 2 -P 1 (W ITH J 2 AND J1 SHORT)
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1000PF,
350uH
TN000422X0
SI-30086
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Untitled
Abstract: No abstract text available
Text: LDWER ROW E L E C T R IC A L S P E C IF IC A T IO N S : 1.0 TURNS R A TID P 1 -P 2 -P 3 i (J 1 -J 2 ) ( P 4 - P 5 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE C P 6 -P 4 ) (P 3 -P 1 ) 3.0 LEAK A G E INDUCTANCE P 6 - P 4 (W ITH J6 AND J 3 SHORT) P 3 -P 1 (W ITH J 2 AND J1 SHORT)
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1000PF,
350uH
TN000422XO
I-30080
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si30058
Abstract: No abstract text available
Text: LOWE R RDV ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 1 - P 2 - P 3 (P 4 -P 5 -P 6 ) : (J 1 -J 2 ) : (J 3 -J 6 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )
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1000PF,
10OKHz,
350uH
SI-30058
si30058
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Untitled
Abstract: No abstract text available
Text: LOWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 - P 2 - P 1 : ( J 2 - J 1 ) (P 7 -P 5 ) : (J 5 -J 4 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 COMMON MODE ATTENUATION : 6 .0 RETURN LOSS: (J 1 -J 2 ) ; (P 7 -P 5 )
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I-30127
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Untitled
Abstract: No abstract text available
Text: LOWER ROW D (D © ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: ( P 1 - P 2 - P 3 : ( J 1 - J 2 ) (P 4 -P 5 -P 6 ) : (J3 -J6 ) 2.0 INDUCTANCE: (P 6 -P 4 ) ( P 3 -P 1 ) 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: (P 6.P5.P 4) TO (J6 .J3 )
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1000PF,
350uH
100KHz,
TN000422XC)
SI-30039
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Untitled
Abstract: No abstract text available
Text: LDWER ROW 1000PF, 2KV E L E C T R IC A L S P E C IF IC A T IO N S : 1.0 TURNS RA TID P 1 -P 4 -P 2 i (J 1 -J 2 ) ( P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE C P 6 -P 3 ) (P 2 -P 1 ) 3.0 LEAK A G E INDUCTANCE P 6 - P 3 (W ITH J6 AND J 3 SHORT) P 2 -P 1 (W ITH J 2 AND J1 SHORT)
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1000PF,
350uH
TN000422XO
SI-30087
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Untitled
Abstract: No abstract text available
Text: LOW ER ROW < D d> - <&> ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE P 6 - J 6 ( P l- J l) 2.0 DC R ESIST A N C E P 6 - J 6 J P 3 - J 3 ; P 2 - J E J P I - J1 3.0 COMMON MDDEi FREQUENCYCMHz) T Y PICALC-dB) 1 8 5 17 20 23 70 25 2 00 22 500 11 UPPER REV •65uH TYP g 0,1V ; LOKHz
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SI-30036
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SI-30049
Abstract: No abstract text available
Text: LOWER U PP ER ROW ROW ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 - J 1 = (P 2 - J 2 (P 4 —J 4 )= (P 5 —J5 65uH TYP @ 0.1V, 10KHz 65uH TYP @ 0.1V, 10KHz 2.0 DC RESISTANCE: P5-J5; P4-J4; P2-J2; P 1- J1 3.0 COMMON MODE: 0.5 OHM MAX FREQUENCY (MHz)
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10KHz
SI-30049
TN000422XC)
SI-30049
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Untitled
Abstract: No abstract text available
Text: UPPER LOWER ROW ROW IJS |J1 IJ2 IJ7 IJ 6 IJ 5 1 IJ3 IJ4 IJ4 IJ5 IJ3 ^ IJ6 IJ2 IJ1 IJ7 I JS ELECTRICAL SPECIFICATIONS: 65uH TYP @ 0.1V, 10KHz 65uH TYP @ 0.1V, 10KHz 1.0 INDUCTANCE: P1 -J 1 = ( P 2 - J 2 (P 4 —J 4 ) = ( P 5 —J5 2.0 DC RESISTANCE: P 5 -J 5 ; P 4 -J 4 ; P 2 -J 2 ; P 1 - J1
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10KHz
I-30109
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Untitled
Abstract: No abstract text available
Text: LDWER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P1-P2-P3 i (J1-J2) (P 4 -P 5 -P 6 ) i CJ3-J6) 2.0 INDUCTANCE CP6-P5) (P2-P1) 3.0 LEAKAGE INDUCTANCE P6-P5 (WITH J6 AND J3 SHORT) P2-P1 (WITH J2 AND J1 SHORT) 4.0 INTERVINDING CAPACITANCE <P6,P5,P4) TO <J6,J3)
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1000PF,
350uH
SI-30094
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Untitled
Abstract: No abstract text available
Text: LOW ER ROW < D d> - <&> ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE P 6 - J 6 ( P l- J l) 2.0 DC R ESIST A N C E P 6 - J 6 J P 3 - J 3 ; P 2 - J E J P I - J1 3.0 COMMON MDDEi FREQUENCYCMHz) T Y PICALC-dB) 1 8 5 17 20 23 70 25 2 00 22 500 11 UPPER REV •65uH TYP g 0,1V ; LOKHz
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SI-30036
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iv02
Abstract: No abstract text available
Text: LDWER ROW 1000PF, 2KV E L E C T R IC A L S P E C IF IC A T IO N S : 1.0 T U R N S R A T ID P 1 - P 4 - P 2 i ( J 1 - J 2 ) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 IN D U C T A N C E C P 6 -P 3 ) (P 2 - P 1 ) 3.0 L E A K A G E IN D U C T A N C E P 6 - P 3
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1000PF,
350uH
SI-30088
iv02
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SI-30005
Abstract: No abstract text available
Text: LDWER ROW ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATID P1-P2-P3 i (J1-J2) (P 4 -P 5 -P 6 ) i CJ3-J6) 2.0 INDUCTANCE (P6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P5,P4) TD <J6,J3)
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1000PF,
350uH
Sl-30005
SI-30005
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a/transistor 30057
Abstract: No abstract text available
Text: LOWER RDV ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 1 - P 2 - P 3 (P 4 -P 5 -P 6 ) : (J 1 -J 2 ) : (J 3 -J 6 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )
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1000PF,
10OKHz,
350uH
I-30057
a/transistor 30057
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Untitled
Abstract: No abstract text available
Text: LOWER ROW < D d> - <&> ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE P 6 - J 6 (P l-Jl) 2.0 DC R E S IS T A N C E P6 -J6J 3.0 P3 -J3; P2-JEJ PI- J1 COMMON MDDEi FREQUENCYCMHz) TYPICALC-dB) 1 8 5 17 20 23 70 25 200 22 500 11 U PPER • 65uH TYP g 0 ,1 V ; L O K H z
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422X0
SI-30007
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30089
Abstract: No abstract text available
Text: LDWER RDW ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATID P1-P2-P3 i (J 1 -J2 ) (P 4 -P 5 -P 6 ) i C J3 -J6 ) 2.0 INDUCTANCE <P6-P4> (P3-P1) 3.0 LEAKAGE INDUCTANCE P 6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P5,P4) TD < J6,J3)
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1000P
350uH
TN000422X0
30089
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