SEG77
Abstract: 2SC3435 DRA18 EM78815 EM78P813 Seg85 exd6 Seg88
Text: ELAN MICROELECTRONICS CORP. EM78P813 program design to EM78815 Notice Please take notice to the undefined register in EM78815. R1 PAGE2 Interrupt Flag2 real value 7 6 5 4 3 2 1 RBF/STD FSK/CW DED CNT2 CNT1 TCC X X R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0
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EM78P813
EM78815
EM78815.
EM78815,
P60/STGT
P61/EST
P65/ADR/CMP1
P66/AD1/CMP2
P67/AD2/CMP3
P70/INT0
SEG77
2SC3435
DRA18
Seg85
exd6
Seg88
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cv21 10k
Abstract: P-QFP32-7x7-0 CXA2040AQ
Text: CXA2040AQ I2C Bus-Compatible Video Switch Description The CXA2040AQ is an I2C bus-compatible 5-input, 3-output video switch for TVs. 32 pin QFP Plastic Features • Serial data control via I2C bus • 5 composite video input systems • 2 Y/C (S terminal) input systems
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CXA2040AQ
CXA2040AQ
90H/92H)
32PIN
QFP-32P-L01
P-QFP32-7x7-0
cv21 10k
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cv21 10k
Abstract: CXA2040Q SYNCD11 GCVM21
Text: CXA2040Q I2C Bus-Compatible Video Switch For the availability of this product, please contact the sales office. Description The CXA2040Q is an I2C bus-compatible 5-input, 3-output video switch for TVs. 32 pin QFP Plastic Features • Serial data control via I2C bus
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CXA2040Q
CXA2040Q
90H/92H)
32PIN
QFP-32P-L01
QFP032-P-0707-A
cv21 10k
SYNCD11
GCVM21
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cv21 10k
Abstract: CXA2040AQ
Text: CXA2040AQ I2C Bus-Compatible Video Switch Description The CXA2040AQ is an I2C bus-compatible 5-input, 3-output video switch for TVs. 32 pin QFP Plastic Features • Serial data control via I2C bus • 5 composite video input systems • 2 Y/C (S terminal) input systems
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CXA2040AQ
CXA2040AQ
90H/92H)
32PIN
QFP-32P-L01
QFP032-P-0707-A
cv21 10k
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NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE961R200
NE960R200
NE960R275
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NE960R5
Abstract: NE960R500 NE960R575 NE961R500 NE962R575
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
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NE960R5
Abstract: NE960R500 NE960R575 NE961R500 NE962R575 ku-band oscillator
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
ku-band oscillator
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NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE961R200
NE960R200
NE960R275
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Untitled
Abstract: No abstract text available
Text: MA4L & MADL Series Silicon PIN Limiter Diodes V20 Chip Outlines Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation
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Untitled
Abstract: No abstract text available
Text: MGA-65100 Medium Power 2 Stage GaAs FET Cascade What LETT mUtim HEW PA C K AR D Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz Single Supply Bias
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MGA-65100
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Untitled
Abstract: No abstract text available
Text: data sheet 0A V A N T E K MGA-65100 Medium Power 2 Stage GaAs FET Cascade October, 1989 Features • • • • Avantek Chip Outline Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ¿b at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz
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MGA-65100
MGA-65100
ADS-1637/R-10-89
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CI1PNTS blE T> H EW LETT PACKARD m • MMM75A4 DD10E13 110 * H P A î î ^ ’651n 0 Medium PQwer 2 Stage GaAs FET Cascade Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ds at 14 GHz
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MMM75A4
DD10E13
MGA-65100
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ne8004 FET
Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY
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NE8004
NE800495-X
NE800495
E800400
gm037
ne8004 FET
ne800495-6
ne0800
NE8004956
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH lU I E im iillC i H21B1/2/3 SYMBOL A ' t @ 6, =4 SECTION X - X~T~ LEAD PROFILE 8T133»-0t A, A; b. P 0, 0; Si £ L MILLIMETERS MIN. MAX. 10.7 1V0 3.0 3Z 30 3.2 600 .750 .50 MOM, 247 24.3 11.8 3.0 6.9 2,3 6.15 12.0 INCHES MIN MAX .422
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H21B1/2/3
8T133
ST1148
ST11S2
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
B0411
B0733
THD200F1
dk52
2SC4977
2N5415 REPLACEMENT
TIP 2n3055
BD68D
SGS-Thomson cross reference
BUX37 THOMSON
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HPMA-0886
Abstract: D 973-R HPMA-0835 HPMA0885
Text: NO V 1 3 1991 TmiKM hai HP AE CWKLAERTDT 1 Silicon Bipolar Monolithic Amplifiers Technical Data HPMA-0800 HPMA-0835 HPMA-0885 HPMA-0886 Features HPMA-0800 • 22.9 dB G ain T ypical a t 1 GHz • Low Noise Figure: 2.5 dB T ypical a t 1 GHz HPMA-0835 • G ain -100% RF T ested
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HPMA-0800
HPMA-0835
HPMA-0885
HPMA-0886
HPMA-0800
HPMA-0835
HPMA-0885
HPMA-0886
5091-1343E
D 973-R
HPMA0885
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mga 017
Abstract: TA111 MGA-62100-GP0 MGA-62100-GP2 MGA-62100-GP6 MGA-621
Text: d a ta sheet O avantek MG A-62100 Low Noise G aAs MM IC Am plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £ 2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz
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MGA-62100
mga 017
TA111
MGA-62100-GP0
MGA-62100-GP2
MGA-62100-GP6
MGA-621
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Untitled
Abstract: No abstract text available
Text: data sheet 0AVANTEK M G A-62100 Low Noise G aA s MM IC A m plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 ft : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz
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MGA-62100
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Untitled
Abstract: No abstract text available
Text: O avantek MGA-62100 Low Noise GaAs MMIC Amplifier Avantek Chip Outline Features • • • • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 -1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz 8.5 dB typical Gain at 14 GHz
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MGA-62100
MGA-62100
310-371-87l7or310-371-8478
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inert gas generator
Abstract: No abstract text available
Text: MGA-62100 Low Noise GaAs MMIC Amplifier Thai HEWLETT W!EM PA C K A R D Features • • • • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 -14 GHz Low Noise Figure 50 Q : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz 8.5 dB typical Gain at 14 GHz
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MGA-62100
inert gas generator
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Untitled
Abstract: No abstract text available
Text: Q a v a n tek MGA-65100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz • High Gain: 9.5 dB typical Gi dB at 14 GHz • Single Supply Bias 3» mil
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MGA-65100
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Untitled
Abstract: No abstract text available
Text: MGA-62100 Low Noise GaAs MMIC Amplifier HEW LETT PA C K A R D *H P A m Features 014 GG1 0 EDS 4447564 • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz
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MGA-62100
MGA-62100
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AVANTEK
Abstract: MGA-65100-GP0 MGA-65100-GP2 MGA-65100-GP6 S2112 GaAs FET chip AVANTEK transistor 1.57 GHz TRANSISTOR
Text: Q avantek MGA-65100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz Single Supply Bias 2 ,4 B ackside
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MGA-65100
AVANTEK
MGA-65100-GP0
MGA-65100-GP2
MGA-65100-GP6
S2112
GaAs FET chip
AVANTEK transistor
1.57 GHz TRANSISTOR
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1N444S
Abstract: No abstract text available
Text: ERICSSON ^ Preliminary May 1997 PBL 386 50/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 50/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Central Office Metering applications and other telecommunications
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2x900
2x30ki2.
1N444S
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