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    Microchip Technology Inc DSPIC33CK256MP705T-I-M7

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    Microchip Technology Inc DSPIC33CK512MP405T-I-M7

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    Microchip Technology Inc DSPIC33CK256MP405T-I-M7

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    Microchip Technology Inc DSPIC33CK512MP305T-I-M7

    IC MCU 16BIT 512KB FLASH 48VQFN
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    Microchip Technology Inc DSPIC33CK256MP605T-I-M7

    IC MCU 16BIT 256KB FLASH 48VQFN
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    DigiKey DSPIC33CK256MP605T-I-M7 Cut Tape 3,234 1
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    TIM7 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM7179-12UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM7179-16 Toshiba TIM7179 - TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM7179-16L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM7179-16SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-16SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-16UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-25UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-30L Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-30UL Toshiba TIM7179 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power Original PDF
    TIM7179-35SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.1-7.9; P1dB (dBm): 45.5; G1dB (dB): 6.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1; Package Type: 2-16G1B Original PDF
    TIM7179-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM7179-4 Toshiba TIM7179 - TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM7179-45SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-4SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-4SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-4UL Toshiba Original PDF
    TIM7179-60SL Toshiba C-Band Power GaAs IMFETs Original PDF
    TIM7179-6UL Toshiba Original PDF
    TIM7179-7L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF

    TIM7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM7785-60ULA

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-60ULA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3= -30 dBc at Pout= 41.0dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=7.5dB at 7.7GHz to 8.5GHz


    Original     		PDF TIM7785-60ULA 7-AA09A) TIM7785-60ULA

    TIM7179-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz


    Original     		PDF TIM7179-4SL TIM7179-4UL TIM7179-4UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz


    Original     		PDF TIM7785-4SL TIM7785-4UL

    TIM7179-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7179-16 2-16G1B) MW51020196 TIM7179-16

    TIM7785-7L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-7L 2-11D1B) MW51060196 TIM7785-7 TIM7785-7L

    TIM7785-16

    Abstract: fet toshiba
    Text: TOSHIBA TIM7785-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7785-16 2-16G1B) MW51110196 TIM7785-16 fet toshiba

    TIM7785-14L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-14L 2-16G1B) MW51100196 TIM7785-14L

    TIM7179-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7179-8 2-11D1B) MW50990196 TIM7179-8

    TIM7785-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-16L 2-16G1B) MW51120196 TIM7785-16L

    TIM7785-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7785-8 2-11D1B) MW51070196 TIM7785-8

    TIM7179-12UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM7179-12UL TIM7179-12UL

    TIM7179-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM7179-16UL Disto10V TIM7179-16UL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-4 MW50970196 TIM7179-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-16SL MW51130196 TIM7785-16SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-7L MW50980196

    Untitled

    Abstract: No abstract text available
    Text: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-30SL TIM7785-30SL----- -----------------------------T1M7785-30SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45.0 d B m at 7.9 G H z to 8 .4 G H z


    OCR Scan     		PDF TIM7984-30L 2-16G1B) MW51160196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-4SL MW51050196 7785-4SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-16 MW51020196 TIM7179-16

    TIM7179-14L

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM7179-14L TECHNICAL DATA FEATURES : • L O W IN T E R M O D U L A T IO N D IS T O R T IO N IM 3 = ■ - 4 3 d B c a t P o = 3 1 .5 d B m , G 1dB = 6.5 d B a t 7.1 G H z to 7 .9 G H z S in g le C a rrie r L evel


    OCR Scan     		PDF TIM7179-14L -TIM7179-14L TIM7179-14L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power * pidB = 45.0 dBm at 7.9 G H z to 8.4 GHz


    OCR Scan     		PDF TIM7984-30L 2-16G1B) MW51160196 DD5271D ltH7250

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-30L TIM7785-30L MW51140196 DD22b3D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-8L MW51080196 TIM7785-8L

    TIM7785-8SL

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM7785-8SL TECHNICAL DATA FEATURES: • LOW INTERMODULATION DISTORTION HIGH EFFICIENCY IM 3 = - 4 5 dBc at Po = 28.5 dBm, qadd = 30 % at 7.7 GHz to 8.5 GHz Single Carrier Level ■ HIGH GAIN HIGH POWER


    OCR Scan     		PDF TIM7785-8SL -TIM7785-8SL- TIM7785-8SL