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Dycotec Materials Ltd DM-TIM-15323-P ONE PART THERMAL EPOXY 2.3 W/MK
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DigiKey	DM-TIM-15323-P	Bulk			1	1 $80.35 10 $80.08 100 $67.52 1000 $67.52 10000 $67.52	Buy Now
Dycotec Materials Ltd DM-TIM-15323-SYP ONE PART THERMAL EPOXY 2.3 W/MK
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DigiKey	DM-TIM-15323-SYP				1	1 $59.61 10 $34.14 100 $23.64 1000 $23.64 10000 $23.64	Buy Now
Dycotec Materials Ltd DM-TIM-15340-SYP ONE PART THERMAL EPOXY 3.7 W/MK
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DigiKey	DM-TIM-15340-SYP				1	1 $54.07 10 $40.34 100 $31.06 1000 $31.06 10000 $31.06	Buy Now
Dycotec Materials Ltd DM-TIM-15075-SY-30 NON-SILICONE THERMAL PUTTY 7.5 W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DM-TIM-15075-SY-30	Bulk			1	1 $61.76 10 $56 100 $43.46 1000 $43.46 10000 $43.46	Buy Now
Dycotec Materials Ltd DM-TIM-15065-SY-30 NON-SILICONE GEL/PUTTY 6.5 W/MK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DM-TIM-15065-SY-30	Bulk			1	1 $57.53 10 $53.42 100 $41.16 1000 $41.16 10000 $41.16	Buy Now

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TIM1 Datasheets (166)

Part	Manufacturer	Description	Datasheet Type	PDF
TIM1011-10	Toshiba	Internally Matched Power GaAs FET (X, Ku-Band)	Original	PDF
TIM1011-10	Toshiba	TIM1011 - TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power	Original	PDF
TIM1011-10	Toshiba	Microwave Power GaAs FET	Scan	PDF
TIM1011-10L	Toshiba	FET, Microwave Power GaAs FET Transistor, ID 11.5 A	Original	PDF
TIM1011-10L	Toshiba	TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power	Original	PDF
TIM1011-15	Toshiba	Internally Matched Power GaAs FET (X, Ku-Band)	Original	PDF
TIM1011-15	Toshiba	TRANS JFET 15V 5500MA 3(2-11C1B)	Scan	PDF
TIM1011-15L	Toshiba	FET, Microwave Power GaAs FET Transistor, ID 11.5 A	Original	PDF
TIM1011-15L	Toshiba	P1dB=42.0dBm at 10.7GHz to 11.7GHz	Original	PDF
TIM1011-2	Toshiba	FET, Microwave Power GaAs FET Transistor, ID 2.6 A	Original	PDF
TIM1011-2	Toshiba	TIM1011 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power	Original	PDF
TIM1011-2L	Toshiba	FET, Microwave Power GaAs FET Transistor, ID 2.6 A	Original	PDF
TIM1011-2L	Toshiba	TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-9D1B, 3 PIN, FET RF Power	Original	PDF
TIM1011-2UL	Toshiba	TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power	Original	PDF

TIM1011-4	Toshiba	Internally Matched Power GaAs FET (X, Ku-Band)	Original	PDF
TIM1011-4	Toshiba	TIM1011 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power	Original	PDF
TIM1011-4L	Toshiba	FET, Microwave Power GaAs FET Transistor, ID 5.2 A	Original	PDF
TIM1011-4L	Toshiba	TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power	Original	PDF
TIM1011-4UL	Toshiba	TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power	Original	PDF
TIM1011-5	Toshiba	Internally Matched Power GaAs FET (X, Ku-Band)	Original	PDF

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TIM1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TIM1213 Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET	Original	PDF	TIM1213-10L TIM1213
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION	Original	PDF	TIM1314-9L 75GHz -25dBc 33dBm
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM1011-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 27.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz HIGH GAIN G1dB=9.0 dB at 10.7 GHz to 11.7 GHz	Original	PDF	TIM1011-8UL
TIM1414-4 Abstract: No abstract text available Text: TOSHIBA TIM1414-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1414-4 MW50280196 TIM1414-4
TIM1112-8 Abstract: No abstract text available Text: TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1112-8 2-11C1B) MW50200196 TIM1112-8
TIM1213-4 Abstract: No abstract text available Text: TOSHIBA TIM1213-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1213-4 MW50220196 TIM1213-4
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION	Original	PDF	TIM1414-18L -25dBc 36dBm 25GHz
TIM1213-10 Abstract: No abstract text available Text: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1213-10 M1213-10 2-11C1B) MW50260196 TIM1213-10
TIM1112-4 Abstract: No abstract text available Text: TOSHIBA TIM1112-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1112-4 MW50190196 TIM1112-4
TIM1213-8 Abstract: No abstract text available Text: TOSHIBA TIM1213-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1213-8 2-11C1B) MW50240196 TIM1213-8
TIM1011-4L Abstract: No abstract text available Text: TOSHIBA TIM1011-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz	Original	PDF	TIM1011-4L MW50100196 TIM1011-4L
TIM1414-4LA-371 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation	OCR Scan	PDF	TIM1414-4LA-371 TIM1414-4LA-371
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1414-4 MW50280196
Untitled Abstract: No abstract text available Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm	OCR Scan	PDF	TIM1414-7-252 IGS---72pA

5252 F ic Abstract: No abstract text available Text: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0	OCR Scan	PDF	TIM1414-5-252 -72jjA 5252 F ic
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-\|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1011-5 MW50110196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -	OCR Scan	PDF	TIM1011-15L
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-\|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1112-4 MW50190196
Untitled Abstract: No abstract text available Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids	OCR Scan	PDF	TIM1414-15-252 145mA 2-11C1B)
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz	OCR Scan	PDF	TIM1011-8L 011-8L MW50130196
Untitled Abstract: No abstract text available Text: TIM1213-15L FEATURES : • LOW IN TER M O D U LA TIO N D IS TO R TIO N ■ HIGH GAIN IM 3 = - 4 5 dBc at Po = 30.0 dBm, GidB = 6.0 dB at 12. 7 GHz to 13. 2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY M ATCHED HIG H POWER ■ HERMETICALLY SEALED PACKAGE	OCR Scan	PDF	TIM1213-15L 2-11C1B) 213-15L
TS 4142 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1414-2 MW50270196 TS 4142
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package	OCR Scan	PDF	TIM1414-4A MW50290196
Untitled Abstract: No abstract text available Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0	OCR Scan	PDF	TIM1414-7-252

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Dycotec Materials Ltd DM-TIM-15323-P

Dycotec Materials Ltd DM-TIM-15323-SYP

Dycotec Materials Ltd DM-TIM-15340-SYP

Dycotec Materials Ltd DM-TIM-15075-SY-30

Dycotec Materials Ltd DM-TIM-15065-SY-30

TIM1 Datasheets (166)

TIM1 Datasheets Context Search

TIM1213

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TIM1414-4

TIM1112-8

TIM1213-4

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TIM1213-10

TIM1112-4

TIM1213-8

TIM1011-4L

TIM1414-4LA-371

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5252 F ic

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TS 4142

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