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    TIC 263A Search Results

    TIC 263A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL6263AIRZ Renesas Electronics Corporation 5-Bit VID Single-Phase Voltage Regulator with Power Monitor for IMVP-6+ Santa Rosa GPU Core Visit Renesas Electronics Corporation
    ISL6263ACRZ Renesas Electronics Corporation 5-Bit VID Single-Phase Voltage Regulator with Power Monitor for IMVP-6+ Santa Rosa GPU Core Visit Renesas Electronics Corporation
    ISL78263ARZ Renesas Electronics Corporation Automotive 42V Dual Synchronous Boost and Low-Iq Buck Controllers with Integrated Drivers Visit Renesas Electronics Corporation
    ISL78263ARZ-T Renesas Electronics Corporation Automotive 42V Dual Synchronous Boost and Low-Iq Buck Controllers with Integrated Drivers Visit Renesas Electronics Corporation
    ISL6263ACRZ-T Renesas Electronics Corporation 5-Bit VID Single-Phase Voltage Regulator with Power Monitor for IMVP-6+ Santa Rosa GPU Core Visit Renesas Electronics Corporation

    TIC 263A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIC263A Texas Instruments 100 V, 26 A, silicon triac Scan PDF

    TIC 263A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tic 263a

    Abstract: seven wonders TRW speech
    Text: SSI 263A Phoneme Speech Synthesizer cmmâiskms INNOVATORS DRS IN lirINTEGRATION Data Sheet D ESCRIPTION The SSI 2 6 3 A is a v e rs a tile , h ig h -q u a lity , phonem eba sed s pe ech s y n th e s iz e r c irc u it c o n ta in e d in a s in g le m o n o lith ic CM O S in te g ra te d c irc u it. It is d e s ig n e d to


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76445P3, HUF76445S3S in te g r a i D ata S hee t O ctob er 1999 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F i le N u m b e r u m 4 6 7 6 .3 a ffc " Features JE D EC TO -220AB JE D EC TO -263AB • Ultra Low On-Resistance


    OCR Scan     		PDF HUF76445P3, HUF76445S3S -220AB -263AB 0065Q, 0075ft, HUF76445P3 F76445P3 F76445S3S

    338A

    Abstract: No abstract text available
    Text: in t e r r ii HUF76633P3, HUF76633S3S D a ta S h e e t O c to b e r 1 9 9 9 4 6 9 3 .3 U rlta O ^j 38A, 100V, 0.036 Ohm, N-Channel, Logic LeveI UltraFET Power MOSFET Packaging F ile N u m b e r Features JE DEC TO -263AB JEDEC TO -220AB • Ultra Low On-Resistance


    OCR Scan     		PDF HUF76633P3, HUF76633S3S -220AB -263AB HUF76633P3 F76633P3 F76633S3S -263AB 338A

    Untitled

    Abstract: No abstract text available
    Text: N E W PRODUCT N E W PRODUCT N E W PRODUCT MBRB2535CT THRU MBRB2560CT SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES TO-263AB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap


    OCR Scan     		PDF MBRB2535CT MBRB2560CT O-263AB

    70n06 to 247

    Abstract: RFP70N06 70n06
    Text: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB


    OCR Scan     		PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. RF1S70N06SM AN7260. 70n06 to 247 RFP70N06 70n06

    Untitled

    Abstract: No abstract text available
    Text: ¡Tî HARRIS HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS S E M I C O N D U C T O R 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs June 1995 Packages Features JEDEC TO-220AB • Lo gic Level G ate D rive EMITTER COLLECTOR • In ternal V oltag e C lam p


    OCR Scan     		PDF HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS O-220AB

    K200707

    Abstract: d4454 L218671
    Text: \4M < ► General Purpose Fuses @ DIN Fuse Accessories D-type DIAZED D Fuse System 2 - 200 A, 500 V, 690 V Line protection fuses gL-gG IEC 269-3-1 DIN VDE 0636 Part 31 DIN VDE 0636 Part 301 Dim ensions are stip u la te d in the fo llo w in g regulations:


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    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3S interrii D a ta S h e e t 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75321P3, HUF75321S3S AN7260.

    60p03

    Abstract: PLIC
    Text: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 027S2 RF1S60P03 RF1S60P03SM 1e-30 60p03 PLIC

    F1S30P05

    Abstract: No abstract text available
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05

    F40N10LE

    Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
    Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 33e-3 00e-5) 38e-6) F40N10LE 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n

    TIC 106 PSPICE

    Abstract: FP23N06L tic 263a FP23N06
    Text: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM HARRIS S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D E C T O -220A B • 23 A ,60V • rDS ON = 0.065i2


    OCR Scan     		PDF RFP23N06LE, RF1S23N06LE, RF1S23N06LESM -220A 065i2 -262A 99e-4 71e-12) 27e-2 73e-5) TIC 106 PSPICE FP23N06L tic 263a FP23N06

    30N06LE

    Abstract: 30n06l s1am 30n06 F30N06LE
    Text: fT| HARRIS RFP30N06LE, RF1S30N06LE, S E ",O N O U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs J u ly 1 9 9 5 Features Packages JE D EC T 0 -2 2 0 A B • 3 0 A ,6 0 V • r D S O N | =


    OCR Scan     		PDF RFP30N06LE, RF1S30N06LE, RF1S30N06LESM -262A RF1S30N06LE RF1S30N06LESM 576e-4 591e-9 1e-30 30N06LE 30n06l s1am 30n06 F30N06LE

    b527

    Abstract: tic 263a NDP506A
    Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's


    OCR Scan     		PDF NDP506A NDP506B NDB506A NDB506B bSD113D b527 tic 263a

    ATM machine using microcontroller

    Abstract: AT89SC168A
    Text: Features * Compatible with MCS-51 products • On-chip Flash Program Memory - Endurance: 125,000 Write/Erase Cycles * On-chip EEPROM Data Memory - Endurance: 125,000 Write/Erase Cycles • 512 x 8-bit RAM • ISO 7816 I/O Port * Random Word Generator • Two 16-bit Timers


    OCR Scan     		PDF MCS-51TM 16-bit AT89SCXXXXA AT89SC 1263AS-- ATM machine using microcontroller AT89SC168A

    40N10

    Abstract: RFP40N1Q F1S40N
    Text: RFG40N10, RFP40N10, RF1S40N10SM î n t e f s il D ata S h e e t J u ly 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFG40N10, RFP40N10, RF1S40N10SM TA9846 AN7260. 40N10 RFP40N1Q F1S40N

    f3205

    Abstract: No abstract text available
    Text: interrii HRF3205, HRF3205S D a ta S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    OCR Scan     		PDF HRF3205, HRF3205S f3205

    hcpl261

    Abstract: tic 263a hcpl466
    Text: W hnW H E W L E T T m LEM P a c k a r d HCMOS Compatible, High CMR, 10 MBd Optocouplers Technical Data HCPL-261A HCPL-263A HCPL-261N HCPL-263N Features • HCMOS/LSTTL/TTL Performance Compatible • 1000 V/|is Minimum Common Mode Rejection CMR at VCM = 50 V (HCPL261A Family) and 15 kV/|is


    OCR Scan     		PDF HCPL-261A HCPL-263A HCPL-261N HCPL-263N HCPL-061A HCPL-063A HCPL-061N HCPL-063N HCPL261A hcpl261 tic 263a hcpl466

    12n60u

    Abstract: sta 750 tic 263a
    Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH


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    Untitled

    Abstract: No abstract text available
    Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.

    rr180

    Abstract: 75337 75337S 75337P
    Text: in te rrii HUF75337G3, HUF75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337S3S AN7260. rr180 75337 75337S 75337P

    75339p

    Abstract: 75339g TA75339 263A tic 263a 75339S F75339P3
    Text: in te fsil HUF75339G3, HUF75339P3, HUF75339S3S D a ta S h e e t J u n e 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75339G3, HUF75339P3, HUF75339S3S HUF7S339G3, HUF75339S3S AN7260. 75339p 75339g TA75339 263A tic 263a 75339S F75339P3

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D S E M IC O N D U C T O R Ju|y " 7 tm N D P 6030 / N D B 6030 N -C h a n n e l E n h a n c e m e n t M o d e F ield E ffe c t T ra n s is to r General Description These N -C h a n n e l Features enhancem ent m ode power fie ld e ffe c t • 46


    OCR Scan     		PDF NDP6030.

    76143S

    Abstract: 76143P
    Text: interdi HUF76143P3, HUF76143S3S D ata S h e e t 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76143P3, HUF76143S3S HUF76143S3S 76143S 76143P