welding transformer SCR
Abstract: SCR C106D equivalent circuit scr tic 106 200mh inductor slip ring motor characteristics curve 5 hp DC motor speed control using scr scr C106 Fuse class CC 400V crowbar SCR C106D terminal and characteristic scr tic 106 ac
Text: Littelfuse Varistor Design Examples Application Note [ /Title AN97 72 /Subject (Harris Varistor Design Examples) /Autho r () /Keywords (TVS, Transient Suppression, Protection, ESD, IEC, EMC, Electromagne tic Compatibility, Harris Sup- This note is meant to be a guide for the user in selecting a
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117VAC
welding transformer SCR
SCR C106D equivalent circuit
scr tic 106
200mh inductor
slip ring motor characteristics curve
5 hp DC motor speed control using scr
scr C106
Fuse class CC 400V crowbar
SCR C106D terminal and characteristic
scr tic 106 ac
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C214K
Abstract: No abstract text available
Text: EC 35/17/10 Core • • • • B66337 In aecnrdance with IFD 647 Com pact E core with large winoing window Round cen ter leg particularly suitable for use of thick winding wires EC cores are supplied as pieces M a g n e tic c h a ra c te ris tic s per get
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B66337
DGG337-G-X127
66337-G
100-X
B66337-G
250-X127
B66337-Gpped
C214K
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Untitled
Abstract: No abstract text available
Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SiP MODULE IDT7MP156 FEATURES: DESCRIPTION • H ig h -de n sity 256K (256K x 1) C M O S sta tic RAM m o du le • C ost-effective p la s tic su rfa ce m o un ted RAM p a cka g e s o n an e p o x y lam in ate (FR4) substrate
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IDT7MP156
T7187
IDT7MP156
256Kx
7MP156
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Untitled
Abstract: No abstract text available
Text: yAiSHi MINIATURE A L U M IN U M E LE C T R O L Y TIC C A P A C IT O R S HP Standard bi-polarized series ® Endurance :+105°C 1,000 hours ® RoHS Compliant ♦ SPECIFICATIONS Ite m s C h a r a c te r is tic s Category T e m p e ra tu re Ran ge -40 to +105°C 6.3 to 100Vdc
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100Vdc)
100Vdc
120Hz)
06CVor
03CVor
10x16
16x25
18x35
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m33 tf 130
Abstract: 1001 fba hybrid
Text: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7
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Am79C02/03/031
79C02
79C031
79C03
Am79C031
m33 tf 130
1001 fba hybrid
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HIGHWAY 09a ic
Abstract: HIGHWAY 09A Diode CK 99A bubble memory f173
Text: November 1980 NBM2011 1M x 1 Magnetic Bubble Memory Device General Description The NBM2011 is a 1,048,576 220 b it m a g n e tic b u b b le m em ory device. A ll required m a g n e tic co m p o n e n ts, in c lu d in g th e d rive fie ld c o ils , p erm a n e nt m a g n e ts and pro
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NBM2011
16-pin
910t339-9240
089i57609i
HIGHWAY 09a ic
HIGHWAY 09A
Diode CK 99A
bubble memory
f173
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Untitled
Abstract: No abstract text available
Text: I ntegrator Series FPGAs: 40MX and 42MX Fami Ii es Single-Chip ASIC Alternative Features • 9 5 -1 0 0 % Resource U tiliz a tio n , Using A u to m a tic Place and R o u te T o o ls w ith up to 100% Pin F ixing. • D e te rm in is tic , U s e r-C o n tro lla b le T im in g Via D ire c tT im e
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PBGA272
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F10581
Abstract: F10181 F10179 F1018 fairchild ECL
Text: F10181^ F10581^ 4-BIT ALU/FUNCTION GENERATOR F10K VOLTAGE COMPENSATED ECL D E S C R IP T IO N — T h e F10181 a nd F10581 a re h ig h -s p e e d a rith m e tic logic units c a p a ble o f p erform ing 16 lo g ic o p era tio n s and 16 a rith m e tic op era tio n s on tw o 4 -b it w ords.
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F10181^
F10581^
F10181
F10581
F10179,
F10179
F1018
fairchild ECL
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LX245
Abstract: LX2450 SSB-LX2450AW
Text: UNCONTROLLED DOCUMENT REV, A [ 0,7 8 9 ] 20.04 6,10 [ 0.240] REV. S S B -LX 2450A W A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 S X L i [0,191] PARAMETER MIN PEAK WAVELENGTH 3,81 [0,150] REVERSE VOLTAGE
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SSB-LX2450AW
605nm
LX245
LX2450
SSB-LX2450AW
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION: HIGH DENSITY - MACHINED CONTACTS -VER TIC AL MATERIALS AND FINISH: SHELL: INSULATOR: CONTACT MATERIAL: CONTACT FINISH: C ± 0.01 5 ELECTRICAL: 156 B ± 0.010 CONTACT CURRENT RATING: CONTACT RESISTANCE: DIELECTRIC WITHSTANDING VOLTAGE: INSULATION RESISTANCE:
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000VAC
180-MYY-1XYRYYY
180-MYY-11YRYYY
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HC-88
Abstract: hc81
Text: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .
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HC-90
HC-88
hc81
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 - B it A rith m e tic L o g ic U n it/ F u n c tio n G e n e ra to r M C 10181 T h e M C 10181 is a h ig h -s p e e d arithm etic iogic u nit capable of perform ing 16 lo g ic o p e ra tio n s and 16 a rith m e tic o p e ra tio n s on tw o fo u r - b it w ord s. Full
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a-158
DL122
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Untitled
Abstract: No abstract text available
Text: F10181^ F10581^ 4-BIT ALU/FUNCTION GENERATOR F10K VOLTAGE COMPENSATED ECL D E S C R IP T IO N — T h e F10181 and F10581 are high -spe ed a rith m e tic lo g ic un its cap a LO G IC S Y M B O L ble o f p e rfo rm in g 16 lo g ic o p e ra tio n s and 16 a rith m e tic o p e ra tio n s o n tw o 4 -b it w ords.
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F10181^
F10581^
F10181
F10581
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LX245
Abstract: SSB-LX2450YW
Text: UNCONTROLLED DOCUMENT REV, A B 20.04 [0 ,7 8 9 ] PART NUMBER REV. S S B -LX 2450Y W B E.C.N. NUMBER AND REVISION COMMENTS 19.05 [0,750] E.C.N. #10BRDR. & REDRAWN. ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 S X i 4 ,86 [0,191] 3,81 [0,150] f f 7.26 .96 6.21.01
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SSB-LX2450YW
10BRDR.
LX245
SSB-LX2450YW
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Slide Switch 1P3T
Abstract: MPS101 P079 t098 13001H
Text: b3i4hflG2 0001413 R31 MPS Series SPECIFICATIONS SUBJECT TO CHANGE WITHOUT N O TIC E Miniature Pushbutton Style Slide Switches SPECIFICATIONS FEATURES Contact ratings: Pushbutton contacts; 0.4 Volt-Amps max. at 20 V max. AC or DC Slide contacts; 300 mA at 125 VAC
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MPS101B
Slide Switch 1P3T
MPS101
P079
t098
13001H
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PLB12
Abstract: No abstract text available
Text: SK2951 POSITRON1C INDUSTRCS BELIEVES THE DATA ON TrtS ORMMNC TO BE RELIABLE. SINCE THE TECHNICAL INFORMATION IS OVEN FREE OF CHARGE, TIC USER EktflOYS SUCH INFORMATION AT M S OWN OlSCRETlON AND RISK. POSlTROMC NDUSTRlES ASSUMES NO RESPONSIBUTY FOR RESULTS OBTAMEO OR OAftlAGES
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SK2951
SK6370
PLB12
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Untitled
Abstract: No abstract text available
Text: 7 4 A C /A C T 1 1640 O ctal Transceiver w/Direction Pin; 3-State; INV S ig n e tic s Product Specification ACL Products GENERAL INFORMATION FEATURES C O N D IT IO N S • Octal bidirectional bus Interface UNIT A • Inverting version of '245 • Output capability: ±24 mA
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74AC/ACT11640
10MHz
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Untitled
Abstract: No abstract text available
Text: 74 A C /A C T ! 1657 O ctal Transceiver with 8-Bit Parity Checker/G enerator S ig n e tic s Objective Specification ACL Products GENERAL INFORMATION FEATURES C O N D IT IO N S • 3-State outputs • Combines '245 and '280 functions In one package • Output capability: ±24 mA
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75mA1
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74AC11470D
Abstract: 74AC11470N 74ACT11470 74ACT11470D 74ACT11470N
Text: P h ilip s C o m p o n e n ts — S ig n e tic s 74AC/ACT11470 Document No. ECN No. Date of Issue August 23,1990 Status Preliminary Specification Octal transceiver/register with dual enable 3-State ACL Products FEATURES • • QUICK REFERENCE DATA Com bines *245 and '374 type func
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AC/ACT11470
74AC/ACT11470
10MHz
74AC11470D
74AC11470N
74ACT11470
74ACT11470D
74ACT11470N
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction
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1N5059
1N5062
b-2233
1N5059
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varistor 10c 471
Abstract: VARISTOR ZENAMIC Z21L821 zenamic Z21L821 ZENAMIC VARISTOR ZENAMIC 471 zenamic Z15L431 2wl1 Z21L681 Z15L221
Text: POWER PRODUCTS INTERNATIONAL LTD METAL OXIDE VARISTOR ZENAMIC Z E N A M IC is th e pro d u ct nam e of a m etal o x id e varistor. Features • H ig h e n e rg y a b s o r p tio n • E x c e lle n t v o lta g e c la m p in g c h a ra c te ris tic s • S y m m e tr ic a l c h a ra c te ris tic s — fo r use o n A C o r D C
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volt506
380CM00A
5000A
0000A
Z33M441
IL41LJ
varistor 10c 471
VARISTOR ZENAMIC Z21L821
zenamic
Z21L821
ZENAMIC VARISTOR
ZENAMIC 471
zenamic Z15L431
2wl1
Z21L681
Z15L221
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50E30
Abstract: No abstract text available
Text: Preliminary IM P 50E 30 EPAC Programmable Monitoring and Diagnostic 1C Electrically Programmable Analog Circuit Introduction The IM P5 0 E3 0 is a programmable IC offering a variety o f m onitoring, diagnos tic and data-acquisition capabilities. Its operating modes increase system
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P50E30s
E30C-018AC
44-pin
4flSD42tÃ
GG05M5D
DS50E30-10-96
MS-018AC
IMP50E30
50E30
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capacitor 400V 560 MF
Abstract: No abstract text available
Text: f MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS • N o sparks against DC over-voltage •Endurance with ripple current: 105”C 2000 hours •N o n solvent-proof ♦SPECIFICATIONS Ite m s ''.C h a r a c te r is tic s Category Temperature flange Rated Voltage Range
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400Vdo
120Hz)
20MM35
KLG200VB220MM40
KLG400VB22ML25
KLG400VB33ML25
KLG400VB39ML31
KLG400VB39MM25
capacitor 400V 560 MF
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KM44C2568P
Abstract: KM44C256BJ tantalum Capacitor A8 Jh KM44C256BZ KM44C256B-10 KM44C256B KM44C256B-7 KM44C256B-8 SS5C F47F
Text: CMOS DRAM KM44C256B 256K x 4 B it CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C256B-7 KM44C256B-8 KM44C256B-10 <KAC tcAC tic 70ns 80ns 100ns 20ns 20ns 25ns 130ns 150ns 180ns The Samsung KM44C2S6B is a CMOS high speed
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KM44C256B
256Kx
KM44C256B-7
130ns
KM44C256B-8
150ns
KM44C256B-10
100ns
180ns
KM44C2S6B
KM44C2568P
KM44C256BJ
tantalum Capacitor A8 Jh
KM44C256BZ
KM44C256B
SS5C
F47F
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