TIC 136 TRANSISTOR Search Results

TIC 136 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TIC 136 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: , Ltna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF342 SILICON POWER NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-220AB MRF342 is designed for VHP amplifier applications operating to 150MHz.	Original	PDF	MRF342 O-220AB MRF342 150MHz.
L2503 Abstract: No abstract text available Text: I # l • HIGH-SPEED TRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS -f I , ■ HCPL-2503 HCPL-4502 6N136 6N135 PACKAGE DIMENSIONS DESCRIPTION 6i ft & ¿3 T h e H C P L-4502/H G P L-2503 a n d 6N 136/5 o p to c o u p le rs c o n ta in a 700 nm G aA sP LED e m itte r, w h ic h is o p tic a lly	OCR Scan	PDF	HCPL-2503 HCPL-4502 6N136 6N135 L-4502/H L-2503 C1997 L2503
8d136 Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133 Text: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6	OCR Scan	PDF	8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
transistor BD 141 Abstract: No abstract text available Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126	OCR Scan	PDF	BD136. BD138, BD140 6235bQS BD138. transistor BD 141
TIC 136 Transistor Abstract: mrf475 tic 136 mrf475 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications	OCR Scan	PDF	MRF475 TIC 136 Transistor mrf475 tic 136 mrf475 transistor
AFY42 Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in	OCR Scan	PDF	AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
transistor bd 126 Abstract: bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136 Text: B D 136 B D 138 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S P N P S IL IC IU M , P L A N A R Compì, of BD 135, 6D 137 PRELIM INARY DATA N O T IC E P R E L I M IN A I R E These transistors are intended for a wide variety of medium power complementary symetry appli	OCR Scan	PDF	135/BD 137/BD deh31E 136ouBD 300/is transistor bd 126 bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136
125CV Abstract: No abstract text available Text: Tem ic sllico„,x_ 2N7224JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VD S V rDS(on) (Ö ) I d (A) 100 0.081 34 Parametric limits in accordance with M IL -S-19500!592 where applicable. TO-254AA H erm etic P ackage O	OCR Scan	PDF	2N7224JANTX/JANTXV -S-19500 O-254AA P-37164-- 125CV
J122 MARKING Abstract: No abstract text available Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor D esigned for am plifier, frequency m ultiplier, or oscillator applications in industrial equipment constructed with surface m ount com ponents. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment.	OCR Scan	PDF	MRF3866 --j10 MRF4427, J122 MARKING
MRF344 Abstract: transistor D 2588 MRF340 MRF342 erie redcap 221A-04 RF POWER TRANSISTOR NPN 150 watts power amplifier layout TRANSISTOR 2586 Text: MOTOROLA SC XSTRS/R F 4bE b 3 b 7 2 S M OOTMbO? 1 » MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W 1 0 0 -1 5 0 M H z R F POW ER T R A N S IS T O R NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d e s ig n e d p r im a r ily f o r u s e in V H F a m p lifie r s w it h a m p litu d e	OCR Scan	PDF	b3b72SM MRF344 T0-220AB MRF340 MRF342 T-33-11 MRF344 transistor D 2588 erie redcap 221A-04 RF POWER TRANSISTOR NPN 150 watts power amplifier layout TRANSISTOR 2586
BD 139 N Abstract: transistor BD 141 bd139 Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to	OCR Scan	PDF	023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139
2SB541 Abstract: 2SD388 2SD 388 A triple diffused mesa Text: SEC SILICON POWER TRANSISTORS ELECTBM DEVICE 2SB 541 2 S D 3 8 8 AUDIO FREQUENCY POWER AMPLIFIER PN P/N PN SILICON TRIPLE DIFFUSED MESA TRANSISTOR D ESCRIPTIO N PACKAGE DIM EN SIO N S The 2SB541 in millimeters inches and 2SD388 are triple diffused mesa transistors	OCR Scan	PDF	2SB541 2SD388 2SB541 2SD388 2S8641 2SD 388 A triple diffused mesa
TIC 136 Transistor Abstract: 2.22 pf trimmer Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF4427R2 D e s ig n e d fo r a m p lifie r, fre q u e n c y m u ltip lie r, o r o s c illa to r a p p lic a tio n s in in d u stria l e q u ip m e n t co n s tru c te d w ith su rfa c e m o u n t c o m p o n e n ts . S u ita b le fo r	OCR Scan	PDF	MRF4427R2 --j13 TIC 136 Transistor 2.22 pf trimmer
8D139 Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135 Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126	OCR Scan	PDF	fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135

Untitled Abstract: No abstract text available Text: PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and in general purpose switching	OCR Scan	PDF	BUK456-1OOA/B BUK456 -100A -100B T0220AB BUK456-100A/B
MRF262 Abstract: MRF264 MRF260 MRF261 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N	OCR Scan	PDF	MRF261 O-220AB MRF260 MRF262 MRF264 MRF261
Untitled Abstract: No abstract text available Text: / T T SGS-THOMSON ^ 7 # S D 1480 RF & MICROWAVE TRANSISTORS _ VHF APPLICATIONS • . ■ . ■ . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING ■ P o u t = 125 W MIN. WITH 9.2 dB GAIN	OCR Scan	PDF	SD1480
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring stable blocking voltage, fast switching and high thermal cycling performance with lowthermal resistance. Intended	OCR Scan	PDF	PHP33N10 220AB -ID/100
PH BUK456 Abstract: TIC 136 Transistor buk456-100b Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PDF	BUK456-100A/B BUK456 -100A -100B T0220AB PH BUK456 TIC 136 Transistor buk456-100b
2N6764 JANTX Abstract: 2N6763 2n6764 Text: POWER MOSFET TRANSISTORS , JTX JTXV¡¡Jgg 100 Volt, 0.055 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching	OCR Scan	PDF	MIL-S-19500/543A K1111. 2N6764 JANTX 2N6763 2n6764
transistor 81 110 w 63 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •	OCR Scan	PDF	MRF581 transistor 81 110 w 63
Untitled Abstract: No abstract text available Text: BC556 to 558 _ SILICON PLANAR EPITAXIAL TRANSISTORS G eneral p u rp o s e p-n -p tra n s is to rs in p la s tic T O -9 2 p a cka g e . QUICK REFERENCE D A T A C o lle c to r- e m itte r v o lta g e + V g £ = 0 V C o lle c to r- e m itte r v o lta g e (o pen base)	OCR Scan	PDF	BC556 BC557 BC558 BC556A BC557A BC558A BC556B BC557B
sm 41056 Abstract: 32N25E TIC 136 Transistor 25C312 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate	OCR Scan	PDF
MRF342 Abstract: transistor D 2581 RF340 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and	OCR Scan	PDF	MRF342 RF340 RF344 MRF342 transistor D 2581

TIC 136 TRANSISTOR Search Results

TIC 136 TRANSISTOR Result Highlights (5)

TIC 136 TRANSISTOR Datasheets Context Search

Untitled

L2503

8d136

transistor BD 141

TIC 136 Transistor

AFY42

transistor bd 126

125CV

J122 MARKING

MRF344

BD 139 N

2SB541

TIC 136 Transistor

8D139

Untitled

MRF262

Untitled

Untitled

PH BUK456

2N6764 JANTX

transistor 81 110 w 63

Untitled

sm 41056

MRF342