TIC 122 TRANSISTOR Search Results

TIC 122 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TIC 122 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TIC 122 Transistor Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157 Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32	OCR Scan	PDF	023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
2f5 transistor Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75 Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF	OCR Scan	PDF	a23SbOS 2f5 transistor Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
transistor a750 Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122 Text: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads	OCR Scan	PDF	AF240 TambS45 0004Q7A transistor a750 F240 transistor TIC 122 Transistor Germanium power tic 122
1BW TRANSISTOR Abstract: No abstract text available Text: T 3 9 -3 / FF 50 R 06 KL SE E EU P E C • 3M G 32T7 0 0 0 0 ^4 E b fi HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p e r module DC, pro Zwelg / per arm RthCK pro Baustein/per module pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften	OCR Scan	PDF	34D32CI7 1BW TRANSISTOR
1BW TRANSISTOR Abstract: diode sg 5 ts Text: EUPEC 5 2 E J> FF 100 R 06 KF 34032^7 m 0000212 003 «UPEC 7 = 3 9 - 3 / Thermische Eigenschaften Transistor Transistor Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 100 A RthCK le Thermal properties	OCR Scan	PDF	34D32CI7 1BW TRANSISTOR diode sg 5 ts
Untitled Abstract: No abstract text available Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module	OCR Scan	PDF
1BW TRANSISTOR Abstract: No abstract text available Text: FF 25 R 06 KF SEE T> EUPEC Thermische Eigenschaften Transistor Transistor 34D32T7 OOQGlflb n i H U P E C Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 25 A RfhCK lc Thermal properties DC, pro Baustein/per module DC, pro Zweig /p e r arm	OCR Scan	PDF	34D32T7 34D32CI7 1BW TRANSISTOR
AFY16 Abstract: Germanium Transistor 71lb 21b22 Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.	OCR Scan	PDF	AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22
TIC 122 Transistor Abstract: TIC 136 Transistor motorola mjl transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY40N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -264 40 A @ 90 C 66 A @ 25 C 600 VOLTS	OCR Scan	PDF	MGY40N60D TIC 122 Transistor TIC 136 Transistor motorola mjl transistor
TIC48 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2000-5L The RF Line M icrowave Linear Power Transistor Motorola Preferred Device Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2 .0 G H z frequency range. • 7 .0 -8 .0 dB GAIN	OCR Scan	PDF	MRF2000-5L IS22I MRF2000-5L TIC48
NEC varistor Abstract: 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220 Text: NEC SILICON VARISTOR 1S1209 ~ 1S1212 ELECTRON DEVICE VD1120~ VD1223 FEATURES • Silicon D iode V aristor fo r Voltage and S u ita b le fo r vo lta g e and te m p e ra tu re co m p e n sa tio n o f B-class Tem perature Com pensation o f Transistor p u s h -p u ll a m p lifie r.	OCR Scan	PDF	1S1209 1S1212 VD1120~ VD1223 NEC varistor 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MGW20N120 Insulated G ate Bipolar Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate This In su la ted G ate B ipo la r T ra n sisto r IG B T u ses an a d va n ce d	OCR Scan	PDF
Transistor BFT 99 Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44 Text: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF	OCR Scan	PDF	Q0G4713 Q62702-F513 051i0 Transistor BFT 99 BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz	OCR Scan	PDF	2SC4322 IS21ei2

transistor VCE 1000V Abstract: 1BW TRANSISTOR EUPEC T Text: EUPEC •52E D FF 7 5 R 10 K ■ 3M032T7 000G20ti flOT H U P E C 7 =3 f 3 / Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module RthJC DC, pro Zweig / per arm pro Baustein / per module RthCK pro Zweig / per arm Elektrische Eigenschaften	OCR Scan	PDF	000020b 34D32CI7 transistor VCE 1000V 1BW TRANSISTOR EUPEC T
PS571 Abstract: BR571L TE 2241 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M PS571 M M B R 571L The RF Line N PN S ilicon High Frequency Transistors lc = 80 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e s ig n e d fo r lo w n o is e , w id e d y n a m ic ra n g e fro n t- e n d a m p lifie r s a n d lo w - n o is e	OCR Scan	PDF	PS571 BR571L TE 2241 motorola
Untitled Abstract: No abstract text available Text: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P\| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.	OCR Scan	PDF	AT-38043 OT-343 SC-70) AT-38043 SC-70 5966-1275E
AT-38043 Abstract: No abstract text available Text: What HEW LETT* mLliM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P\| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ. • 15 dB GldB @ 900 MHz,	OCR Scan	PDF	AT-38043 OT-343 SC-70) AT-38043 SC-70 5966-1275E
LN800 Abstract: C2E1 F400 diode f400 Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties	OCR Scan	PDF	D0DD25fl 34D32CI7 LN800 C2E1 F400 diode f400
Q002 Abstract: transistor BU 110 BU 500 DT 1BW TRANSISTOR Text: T Î3 9 -3 / F 300 R 06 KL SEE EUPEC 34G32T7 D T1 7 « U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein /per module 0,1 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 300 A RthCK	OCR Scan	PDF	34G32T7 34D32CI7 Q002 transistor BU 110 BU 500 DT 1BW TRANSISTOR
HXTR-6105 Abstract: S21E HPAC-100 Text: LOW NOISE TRANSISTOR H E W L E T T ^ P A CKA RD COMPONENTS Features HXTR-6105 «* — 1.0 J0.04 TYP LOW NOISE FIGURE 4.2 dB Maximum at 4 GHz Guaranteed HIGH GAIN 9 dB Typ. at NF Bias Conditions WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction	OCR Scan	PDF	HXTR-6105 HXTR-6105 HIPAC-100, S21E HPAC-100
GP141 Abstract: MRW53102 GP-141 MRW53402 TRW53102 Text: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M R W 53102 Series The RF Line M ic ro w a v e Linear P o w e r T ra n sisto rs 7 TO 8 dB 1 -3 GHz 1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . desig n ed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in th e 1 to 3	OCR Scan	PDF	TRW53102 GP141 MRW53102 GP-141 MRW53402
1BW TRANSISTOR Abstract: F300R06KF R600 Text: 7 =3 f - 3 / F300R 06K F EUPEC SEE • 3M 032T7 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 300 A le 2 ^ O O O O B M fl Thermische Eigenschaften Transistor Transistor D HUPEC Thermal properties DC, pro Baustein/p e r module	OCR Scan	PDF	F300R06KF 3M032T7 34D32CI7 1BW TRANSISTOR F300R06KF R600
MA4T64400 Abstract: low noise transistors MA4T645 MA4T644 Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t	OCR Scan	PDF	A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644

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TIC 122 TRANSISTOR Search Results

TIC 122 TRANSISTOR Result Highlights (5)

TIC 122 TRANSISTOR Datasheets Context Search

TIC 122 Transistor

2f5 transistor

transistor a750

1BW TRANSISTOR

1BW TRANSISTOR

Untitled

1BW TRANSISTOR

AFY16

TIC 122 Transistor

TIC48

NEC varistor

Untitled

Transistor BFT 99

Untitled

transistor VCE 1000V

PS571

Untitled

AT-38043

LN800

Q002

HXTR-6105

GP141

1BW TRANSISTOR

MA4T64400