Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BT152 Preliminary SCR T H Y RI ST OR DESCRI PT I ON The UTC BT152 is a thyristor, it uses UTC’s advanced technology to provide customers with high bidirectional blocking voltage capability and high thermal cycling performance, etc.
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BT152
BT152
BT152L-x-TF3-T
BT152G-x-TF3-T
O-220F
QW-R301-019
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thyristor st 103
Abstract: thyristor BT 200 Thyristor BT 102 BT 139 F applications note
Text: BT 1 5 1 -6 5 0 R ST AN DARD Glass Passivated thyristor in a plastic envelope, intended for use in application blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial, domestic lighting,heating and static switching.
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O-220AB
SC-46
thyristor st 103
thyristor BT 200
Thyristor BT 102
BT 139 F applications note
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thyristor st 103
Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
Text: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction
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str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
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2N 6565 Thyristor
Abstract: ht 30 diac triac t 218 isolated TO220 thyristor triac diac rectifier 2N5xxx TO-220 Package thyristor st 103
Text: Description of Part Numbers Triac and Alternistor Sensitive Triac L 04 20 F 12 5 X Device Type L = Sensitive Triac Special Options V = 4000 V Isolation TO-220 Package Only Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V Lead Form Dimensions TO-202 TO-220
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O-252
O-202
O-220
O-251
O-220
O-202
DO-214
2N 6565 Thyristor
ht 30 diac
triac t 218
isolated TO220 thyristor
triac diac rectifier
2N5xxx
TO-220 Package
thyristor st 103
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40MT160KPBF
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Power Modules FEATURED PRODUCTS Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules RESOURCES • For technical support, contact [email protected]
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VMN-SG2183-1411
DISC4-9337-2726
40MT160KPBF
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40MT160KPBF
Abstract: 160mt160kpbf
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Modules - Wide Range of Standard and Customizable Packages Power Modules Featured Products Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules
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VMN-SG2183-1401
DE9337-2726
40MT160KPBF
160mt160kpbf
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SF8G48/SF8J48/USF8G48/USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-St ate Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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SF8G48/SF8J48/USF8G48/USF8J48
SF8G48,
SF8J48,
USF8G48,
USF8J48
SF8G48-SF8J48
USF8G48-USF8J48
13-10J2B
F8G48
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A1m anode
Abstract: No abstract text available
Text: T O SH IB A SF5G48/SF5J48/USF5G48/USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48, SF5J48, USF5G48, USF5J48 MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-St ate Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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SF5G48/SF5J48/USF5G48/USF5J48
SF5G48,
SF5J48,
USF5G48,
USF5J48
SF5G48-SF5J48
--10mA
USF5G48-USF5J48
13-10J1B
13-10J2B
A1m anode
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thyristor st 103
Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Text: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8
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4bfib22b
MCC95
MCD95
CD95-04io8
CD95-06io8
CD95-08io8
CD95-12io8
CD95-14io8
CDd5-16io8
-06io1
thyristor st 103
mcc95 16 101
CD-951
MCC90
MCC95-12IO1
v06v
MCR-SL-S-1/thyristor st 103
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Westcode N thyristor
Abstract: Westcode N thyristor Semiconductors R216CH12FJO thyristor code WESTCODE TB Westcode thyristor HALF WAVE 45 E 57 20-C1V WKT250-12 R216CH12 SN151JL
Text: UESTCODE SEMICONDUCTORS 3TE D • IV D T i S S OODEbSO H ■ ÜIESB — - ¿ r - /9 UUESTCO D E SEMICONDUCTORS Sk«. Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazardous materials. Integral water cooled unit available.
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SN151JL
5K9/91
Westcode N thyristor
Westcode N thyristor Semiconductors
R216CH12FJO
thyristor code
WESTCODE TB
Westcode thyristor
HALF WAVE 45 E 57 20-C1V
WKT250-12
R216CH12
SN151JL
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BT 816 triac
Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag
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fast thyristor 200A
Abstract: pwm thyristor MAS110S MP02 100A gate turn-off thyristor mas110s10 MAS110S12 15 kV thyristor
Text: MITEL MAS110S Fast Turn-off Asymmetric Thyristor/Diode Module S E M IC O N D U C T O R Supersedes Decem ber 1996 version, DS4200-3.2 DS4200-4.0 April 1999 Applications • High Frequency High Pow er C hoppers And Inverters. • U ltrasonic G enerators.
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MAS110S
DS4200-3
DS4200-4
MAS110S
fast thyristor 200A
pwm thyristor
MP02
100A gate turn-off thyristor
mas110s10
MAS110S12
15 kV thyristor
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1060D
Abstract: GK2E
Text: TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS SEPTEM BER 1995 - REVISED SEPTEM BER 1997 C o p y rig h t 1997, Power innovations Limited, UK PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • • Dual Voltage-Programmable Protectors
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TISP61060D,
TISP61060P
61060P
61060D
1060D
GK2E
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thyristor st 103
Abstract: No abstract text available
Text: MAS110S M ITEL Fast Turn-off Asymmetric Thyristor/Diode Module SEMICONDUCTOR Supersedes Decem ber 1996 version, DS4200-3.2 DS4200-4.0 April 1999 Applications • High Frequency High Pow er C hoppers And Inverters. • U ltrasonic G enerators. • W elding.
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MAS110S
DS4200-4
DS4200-3
thyristor st 103
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three phase bridge inverter in 180 degree and 120
Abstract: single phase half controlled full wave bridge rec transformer calculation formula AN-305 three phase bridge inverter 120 degree ac to dc inverter by thyristor power semiconductor 1973 thyristor st 103
Text: IÖ R CALCULATION OF CURRENT RATING AN-305 INTERNATIONAL RECTIFIER / I P P U C M T O N N O T E CALCULATION OF RECTANGULAR WAVEFORM CURRENT RATING OF THYRISTO RS Most data sheets for reverse blocking, triode, power thyris tors silicon controlled rectifiers give current ratings only
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AN-305
three phase bridge inverter in 180 degree and 120
single phase half controlled full wave bridge rec
transformer calculation formula
AN-305
three phase bridge inverter 120 degree
ac to dc inverter by thyristor
power semiconductor 1973
thyristor st 103
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TP215C
Abstract: Westinghouse thyristor P215C P215CH thyristor tt 121 P215CH06FJ0 westinghouse thyristor drive
Text: * ÙJESTCODE SEMICONDUCTORS D • ^70^55 DODSBO^ _ 1' "> WESTCODE $ SEMICONDUCTORS b ■ U E S B y - ^ y - - ^ Technical Publication TP215C Issue 2 November 1984 Inverter Grade Capsule Thyristor Typ e P 215 C 390 amperes average: up to 800 volts V RRM/VDRM
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P215C
TP215C
T0-200AB
TP215C
Westinghouse thyristor
P215CH
thyristor tt 121
P215CH06FJ0
westinghouse thyristor drive
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Scans-00153891
Abstract: R216CH08FJ0 77az TR216 hawk 00153891
Text: ÜIESTCODE SEMICONDUCTORS 3*3E » • ‘ìTD'ì'ìSS 000230^ ö ■ IdES B 'fL£.$?rgL Technical Publication WESTCODE ® SEMICONDUCTORS TR216C Issue 2 May 1985 High Frequency Inverter Grade Capsule Thyristor Type R216C distributed amplified gate for high di/dt and low sw itching losses
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R216C
TR216C
101A226B
-200AB
2M585
Scans-00153891
R216CH08FJ0
77az
TR216
hawk
00153891
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Untitled
Abstract: No abstract text available
Text: 4böfc.22b 0 0 0 1 1 7 2 T 4bE D I X Y S IIXY T z S -23 CORP □IXYS Thyristor Modules MCC19 I •TAV = 1 2x18A VRRM = 600-1600 V Ii > > > iI > > > 700 900 1300 1500 1700 600 800 1200 1400 1600 Type Version 1 Version 8 M CC19-06io1 MCC19-08lo1 MCC19-12Ì01
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MCC19
CC19-06io1
MCC19-08lo1
MCC19-12Ã
MCC19-14io1
MCC19-16Ã
C19-06io8
C19-08io8
C19-12io6
C19-14io8
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SC10C40
Abstract: SC10C-60 SC10C-80 General Electric thyristor diodo rp 104 SANSHA SC10C SC10C-120 SC10C-40 SC10C120 SC10C
Text: SANSHA ELECTRIC MFG CO SbE D • 7TÌ1SM3 OOODSEÖ SÛ7 MSEIIJ TH YRISTO R SC10C/10C-D T -Z S -Ì5 For general phase control applications such as speed controls, light controls and welders etc. S C 1 0 C -D SC 10C • General power use • It = I OA, I t r m s =
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SC10C/10C-D
SC10C-40
SC10C-60
SC10C-120
SC10C40
SC10C-80
General Electric thyristor
diodo rp 104
SANSHA SC10C
SC10C120
SC10C
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thyristor TAG 103 X
Abstract: No abstract text available
Text: • 4bfib22t. 000170^ MbT « I X Y CIIXYS MDD95 iTAV = 2 x 120 a Diode Modules =400-1800V V rSm V rrm V V T yp » Version 1 8 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MDD95-04N1 MDD95-06N1 MDD95-08N1 MOD95-12N1 MDD95-14N1 MDD95-16N1
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4bfib22t.
MDD95
00-1800V
MDD95-04N1
MDD95-06N1
MDD95-08N1
MOD95-12N1
MDD95-14N1
MDD95-16N1
MDD95-18N1
thyristor TAG 103 X
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CS458
Abstract: No abstract text available
Text: aixYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type Ao ( ^ l ) o C G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol
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O-247
45-08io1
45-12io1
45-16io1
CS458
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thyristor st 103
Abstract: MCR-SL-S-1/thyristor st 103
Text: J.5E D SEMIKRON INC I fll3W,?l GÜOm'iB O I -p a s ^ V drm Itrms maximum values for continuous operation tq 110 A (Tvj V rrm 125 C) V SKFT 40/08 DS 15 20 25 1000 - 40/08 DU 40/10 DT 40/10 DU 40/12 DT 40/12 DU - 20 25 20 25 25 1200 1400 130 A 130 A 110 A
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SKFT60
thyristor st 103
MCR-SL-S-1/thyristor st 103
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powerex T9G
Abstract: marking C451 to200ac thyristor 14B21
Text: POUEREX INC Tl D e | 7 5 1 ^ 5 1 0D017ÛS □ Phase Control Thyristors SCRs lT(AV) 7c =65° C 50% Duty Cycle, Half Sine (Amps) * x () Itsm (Am ps x 103) 50 Hz 60 Hz Pt Idrm/Irrm for @ Rated Fusing Vdrm/Vrrm @ 8.3 ms Vdrm/Vrrm and Tj < mbx) / A 2sec\ Range
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0D017
12ion
MAX/10
powerex T9G
marking C451
to200ac thyristor
14B21
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