HD74HC32
Abstract: HD74UH32 Hitachi DSA00335
Text: HD74UH32 2-input OR Gate ADE-205-018 Z 2nd Edition August 1993 Description The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS-TTL series. The internal circuit of three
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HD74UH32
ADE-205-018
HD74UH32
HD74HC32
HD74HC32
Hitachi DSA00335
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Hitachi DSA0095
Abstract: HD74HC32 HD74UH32
Text: HD74UH32 2-input OR Gate ADE-205-018B Z 3rd. Edition Sep. 2000 Description The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS-TTL series. The internal circuit of three
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HD74UH32
ADE-205-018B
HD74UH32
HD74HC32
Hitachi DSA0095
HD74HC32
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Hitachi DSA00279
Abstract: No abstract text available
Text: HD74UH32 2-input OR Gate The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS-TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output.
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HD74UH32
HD74UH32
HD74HC32
Hitachi DSA00279
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Renesas LOT CODE
Abstract: HD74HC32 HD74UH32 HD74UH32EL
Text: HD74UH32 2-input OR Gate REJ03D0203–0500Z Previous ADE-205-018C (Z Rev.5.00 Feb.02.2004 Description The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS-TTL series. The internal circuit of three
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HD74UH32
REJ03D0203
0500Z
ADE-205-018C
HD74UH32
HD74HC32
Renesas LOT CODE
HD74HC32
HD74UH32EL
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Untitled
Abstract: No abstract text available
Text: HD74UH32 2-input OR Gate REJ03D0203–0500Z Previous ADE-205-018C (Z Rev.5.00 Feb.02.2004 Description The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS-TTL series. The internal circuit of three
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HD74UH32
REJ03D0203â
0500Z
ADE-205-018C
HD74UH32
HD74HC32
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Untitled
Abstract: No abstract text available
Text: FAN3223 / FAN3224 / FAN3225 Dual 4A High-Speed, Low-Side Gate Drivers Features • • Description Industry-Standard Pinouts 5A Peak Sink/Source at VDD = 12V 4.3A Sink / 2.8A Source at VOUT = 6V Choice of TTL or CMOS Input Thresholds Three Versions of Dual Independent Drivers:
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FAN3223
FAN3224
FAN3225
FAN3223-25
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Untitled
Abstract: No abstract text available
Text: FAN3223 / FAN3224 / FAN3225 Dual 4A High-Speed, Low-Side Gate Drivers Features • • Description Industry-Standard Pinouts 5A Peak Sink/Source at VDD = 12V 4.3A Sink / 2.8A Source at VOUT = 6V Choice of TTL or CMOS Input Thresholds Three Versions of Dual Independent Drivers:
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FAN3223
FAN3224
FAN3225
FAN3223-25
FAN3225
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Untitled
Abstract: No abstract text available
Text: FAN3223 / FAN3224 / FAN3225 Dual 4A High-Speed, Low-Side Gate Drivers Features • • Description Industry-Standard Pinouts 5A Peak Sink/Source at VDD = 12V 4.3A Sink / 2.8A Source at VOUT = 6V Choice of TTL or CMOS Input Thresholds Three Versions of Dual Independent Drivers:
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FAN3223
FAN3224
FAN3225
FAN3223-25
FAN3225
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Xtal Oscillators using 7400
Abstract: MG1RT 7400 datasheet 2-input nand gate atmel 846 M6207 TTL 7400 propagation delay MG1000E MG1004E MG1009E MG1014E
Text: MG1RT Radiation Tolerant 0.6 Micron Sea of Gates Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is
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automatic water level controller 7400 circuit
Abstract: 7400 ecl inverter MATRA MHS MG1000E MG1004E MG1009E MG1014E MG1020E MG1033E MG1042E
Text: MG1RT MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is
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MG1000E
Abstract: MG1004E MG1009E MG1014E MG1020E MG1033E MG1042E M1553
Text: MG1RT Radiation Tolerant 0.6 Micron Sea of Gates Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is
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atmel 738
Abstract: MG1070 ATMEL 706 MG1001 atmel 829
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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out12,
BOUT12
atmel 738
MG1070
ATMEL 706
MG1001
atmel 829
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jtag 14
Abstract: No abstract text available
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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out12,
BOUT12
jtag 14
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MG1070
Abstract: No abstract text available
Text: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using
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BOUT12
MG1070
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intel 82c51
Abstract: UT0.6uCRH UT06MRA010 ltx 600 sizes "rad" asic 400 000 gates UT06MRA050 1553 VHDL 82c51
Text: Semicustom Products UT0.6µCRΗ/SRH Commercial RadHardTM and Strategic RadHardTM Gate Array Family Data Sheet December 2003 FEATURES PRODUCT DESCRIPTION Multiple gate array sizes up to 600,000 usable equivalent gates The high-performance UT0.6µCRH/SRH gate array family
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0E-10
intel 82c51
UT0.6uCRH
UT06MRA010
ltx 600 sizes
"rad" asic 400 000 gates
UT06MRA050
1553 VHDL
82c51
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Untitled
Abstract: No abstract text available
Text: HD74UH32 2-Input OR Gate The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS-TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output
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HD74UH32
HD74UH32
HD74HC32
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Untitled
Abstract: No abstract text available
Text: HD74UH32 2-input OR Gate The HD74UH32 is high speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS-TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output.
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HD74UH32
HD74UH32
HD74HC32
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A 3020 8 pin
Abstract: 10 Hz oscillator 3020 transistor power supply TA 3020
Text: ADVANCED ANALOG A D iv is io n o f intech 3020 DESCRIPTION The 3020 m onolithic integrated circuit includes three LED/lamp drivers. Each of the three drivers has two TTL com patible inputs. When the first input is set low, the output is turned ON causing an LED or lamp to turn on.
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2270MARTIN
A 3020 8 pin
10 Hz oscillator
3020 transistor
power supply TA 3020
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Silicon npn TRANSISTOR TCNL 100
Abstract: tcnl 100 TRANSISTOR TCNL 100 ECL IC NAND MUX4E schematic of TTL XOR Gates TSN2 tcnl transistor ic xnor XOR23
Text: T & T MELEC I C b4E D • DOSGQEb OOlGSlfc, Preliminary Data Sheet May 1992 a TG2 ■ ATT? &t M icroelectronics a t BEST-1 Series High-Performance ECL Gate Arrays Features Description ■ 1,000 and 4,000 equivalent logic gates The BEST-1 Series High-Performance ECL Gate
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005002b
001021b
Silicon npn TRANSISTOR TCNL 100
tcnl 100
TRANSISTOR TCNL 100
ECL IC NAND
MUX4E
schematic of TTL XOR Gates
TSN2
tcnl transistor
ic xnor
XOR23
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carry look ahead adder
Abstract: Q20010 Q20120 Q20000
Text: DEVICE SPECIFICATION LOGIC A R R A Y S 020000 Q20000 FEATURES T U R B O ” ECL/TTL Figure 6. Q20080 Die • • • • • • • • • • Up to 18,777 gates, channelless architecture 100 ps equivalent gate delays Low power 0.5-1.0 mW/gate 10K, 10KH, 100KECL and mixed ECL/TTL capability
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Q20080
Q20000
100KECL
Q20004
Q20010
Q20025
Q20045
Q20080
Q20120
carry look ahead adder
Q20120
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signal path designer
Abstract: No abstract text available
Text: PRELIMINARY DEVICE SPECIFICATION Q20000 SERIES ECL/TTL TURBO" LOGIC ARRAYS 020000 FEATURES • Up to 24000 gates, channelless architecture • 100ps equivalent gate delays • Ultra low power ,5-1.0mW/gate • 10K, 10KH, 100K ECL and mixed ECL/TTL capability
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Q20000
100ps
SA/D1203-1089
signal path designer
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Q20P010
Abstract: Q20M100 carry look ahead adder Q20080 Q20P025 Q20025 vernier Q20000 Q20004 Q20010
Text: D EV IC E SP EC IFIC A TIO N LOGIC ARRAYS Q20000 “TURBO” ECL/TTL Q20000 FEATURES Figure 6. Q20080 Die • • • • • • • • • • Up to 18,777 gates, channelless architecture 100 ps equivalent gate delays Low power 0.5-1.0 mW/gate 10K, 10KH, 10OK ECL and mixed ECL/TTL capability
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Q20000
Q20000
0Q03RL
Q20P010
Q20M100
carry look ahead adder
Q20080
Q20P025
Q20025
vernier
Q20004
Q20010
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signal path designer
Abstract: No abstract text available
Text: PRELIMINARY D E V IC E S P E C IF IC A T IO N 320000 SERIES ECL/TTL "TURBO" LOGIC ARRAYS 020000 FEATURES PERFORMANCE SUMMARY PARAMETER Typical gate delay* Maximum toggle frequency Maximum TTL input frequency Maximum TTL output frequency Maximum ECL input frequency
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/D1203-0589
signal path designer
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ECL IC NAND
Abstract: PLESSEY CLA
Text: i A PLESSEY W Sem iconductors ELA 60000 SERIES Supersedes August 1987 Edition ECLGATE ARRAYS The ELA60000 series of ECL gate arrays is a very high performance family of Semi-Custom products based on an advanced 1.5 micron bipolar process. There are three members of the family,
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ELA60000
PS2118
ECL IC NAND
PLESSEY CLA
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