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    TF 164 Search Results

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    TF 164 Price and Stock

    STMicroelectronics 3STF1640

    TRANS NPN 40V 6A SOT89
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    DigiKey 3STF1640 Cut Tape 1
    • 1 $0.55
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    3STF1640 Digi-Reel 1
    • 1 $0.55
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    3STF1640 Reel 7,500
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    Avnet Silica 3STF1640 17 Weeks 1
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    C&K TFCDH8ST1640C

    Basic / Snap Action Switches Snap
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    Mouser Electronics TFCDH8ST1640C 76
    • 1 $9.85
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    Micron Technology Inc MTFDKCC25T6TGJ-1BC1ZABYY

    Solid State Drives - SSD 9400 32TB U.3 SSD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTFDKCC25T6TGJ-1BC1ZABYY 17
    • 1 $6992.23
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    Amphenol Corporation HCTF16164

    Terminals SOCKET 16# SIZE (POWER)
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    Mouser Electronics HCTF16164
    • 1 $0.79
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    C&K TFECK6ST1640C

    Basic / Snap Action Switches Miniature Snap-acting Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TFECK6ST1640C
    • 1 $9.55
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    • 100 $6.33
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    TF 164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    15268

    Abstract: AM150MX-TF
    Text: AM150MX-TF September 2002 Rev. 3 DESCRIPTION AMCOM’s AM150MX-TF is a part of the TF series of GaAs MESFETs. This part has a total gate width of 15.0mm. The AM150MX-TF is designed for high power microwave applications, operating up to 6 GHz. The TF series is in a drop-in mounting style. The bottom of the


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    PDF AM150MX-TF AM150MX-TF 36dBm 15268

    168 523.24

    Abstract: AM144MX-TF 4-9094
    Text: Plastic Packaged GaAs Power FET AM144MX-TF DATASHEET V. 1, November, 1999 DESCRIPTION AMCOM's AM144MX-TF is part of the TF Series of GaAs MESFETs. This part has a total gate width of 14.4 mm. The AM144MX-TF is designed for high power microwave applications, operating up to 8 GHz.


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    PDF AM144MX-TF 168 523.24 4-9094

    sefuse d6x

    Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


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    PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V sefuse d6x SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E

    SEFUSE SF240E

    Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


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    PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V SEFUSE SF240E SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x

    1838 t

    Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


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    PDF IRGPH50MD2 C-481 1838 t 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485

    D-10

    Abstract: IRGPH50MD2 1838t
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


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    PDF IRGPH50MD2 C-481 D-10 IRGPH50MD2 1838t

    FS0606

    Abstract: FS4W1010
    Text: RADIAL LEADED SHIELDED INDUCTORS FS0606/0807/1008/1010/1012/1014/1215/1618 TYPE Shape and size : Dimensions are in mm Features : Ordering information : .Vertical structure, small, lightweight design. FS 1012 - 223 K - TF .No inductive interference.


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    PDF FS0606/0807/1008/1010/1012/1014/1215/1618 FS0606/ FS1012/ FSB1014 FS0606 FS0807 FS100 FS4W1010

    Untitled

    Abstract: No abstract text available
    Text: RADIAL LEADED SHIELDED INDUCTORS FS0606/0807/1008/1010/1012/1014/1215/1618 TYPE Shape and size : Dimensions are in mm Features : Ordering information : .Vertical structure, small, lightweight design. FS 1012 - 223 K - TF .No inductive interference.


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    PDF FS0606/0807/1008/1010/1012/1014/1215/1618 FS0606/ FS1012/ FSB1014 FS0606 FS0807 FS100

    AO211

    Abstract: STD130 SAMSUNG 834
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.155ns, one fanout (SL = 0.00517pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2 ad2b ad2bd2 ad2bd4


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    PDF 155ns, 00517pF, 048pF, 048pF ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 AO211 STD130 SAMSUNG 834

    design dc link inverter

    Abstract: SK47
    Text: Reference Design for IPM Modules Evaluation Board for P95X-A40 TF IPM Modules with an Integrated PFC Controller roprietary data, company confidential. All rights reserved. Reference Design for IPM Modules RD_2015-03_001-v01 page 1 Table of Contents 1 Introduction . 4


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    PDF P95X-A40 001-v01 CRCW06031K74FKEA CRCW0603147KFKEA CRCW06031K07FKEA CRCW060315K0FKEA CRCW060310K0FKEA MC0125W12061383K CRCW06034K70FKEA design dc link inverter SK47

    GCK 164

    Abstract: samsung 649 ao21 OA21D
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp


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    PDF 204ns, 00486pF, 048pF, 048pF ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 GCK 164 samsung 649 ao21 OA21D

    AO222

    Abstract: ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2
    Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.112ns, one fanout (SL = 0.00305pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2


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    PDF 112ns, 00305pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 AO222 ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2

    hd66840fs

    Abstract: HD61830A00H HD66841FS 120-channel HD61100 lcd 2 by 16 HD66204F/FLVTF/TFL hd61830B00 LCD 80 segment driver "LCD timing controller"
    Text: Type Number Order Sorted by Type Name Type HD44100RFS HD44102CH HD44103CH HD44105H HD44780UA00FS/00TF/01FS/ 02FS/UB*FS/UB*TF LCD-II HD61100A HD61102RH HD61103A HD61200 HD61202/TFIA HD61203/TFIA HD61602R/RH HD61603R HD61604R HD61605R HD61830A00H LCDC HD61830B00H LCDC


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    PDF HD44100RFS HD44102CH HD44103CH HD44105H HD44780UA00FS/00TF/01FS/ 02FS/UB* HD61100A HD61102RH HD61103A HD61200 hd66840fs HD61830A00H HD66841FS 120-channel HD61100 lcd 2 by 16 HD66204F/FLVTF/TFL hd61830B00 LCD 80 segment driver "LCD timing controller"

    113 y

    Abstract: HA 1329 QN-08 1329 y-448 AO2222
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5


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    PDF 147ns, 00866pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 113 y HA 1329 QN-08 1329 y-448 AO2222

    AFBR-703ASDZ

    Abstract: IEC-61000-4-2 RIN12OMA SDD11 SFF-8431 10G SFP SCD11 042UI PRBS31
    Text: AFBR-703ASDZ 850nm Digital Diagnostic SFP+ Transceiver for 10Gb Ethernet 10GBASE-SR Characterization Report Description The AFBR-703ASDZ optical transceivers are reduced cost SFP+ 10 Gigabit Ethernet 10GBASE-SR modules for use on multimode fiber. • Receiver Rise and Fall Times RX TR and RX TF


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    PDF AFBR-703ASDZ 850nm 10GBASE-SR AFBR-703ASDZ 10GBASE-SR SFF-8431 SDD22 SCC22) AV02-1900EN IEC-61000-4-2 RIN12OMA SDD11 10G SFP SCD11 042UI PRBS31

    sot-37

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification 16-bit dual supply translating transceiver; 3-state QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = tf ≤ 2.5 ns FEATURES • • • • • Wide supply voltage range A port: 1.2 to 3.6 V B port: 1.2 to 5.5 V


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    PDF 16-bit 74ALVC164245 74ALVC164245 sot-37

    M3329

    Abstract: No abstract text available
    Text: 023M Ä ft î ì m ft m n m & tf s ^ » m & M ä & 1,002,989 ^ & 71,233 8,221,441 fi m m 455,447 * 730,850 591,441 * * ^ M m ^ ft U » $• m 19,706 79,655 t m # & ; m ^ m © m ft » m 463,260 ^ U A Ä M æ » m ê i n s §i ^ & ^ ^ # M & tf S fi X ^ ^ ^ & tf « m


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    PDF 160ffl 205R73Ã M3329

    PE1541

    Abstract: PM8943 Philips capacitor 166 Philips electrolytic 132
    Text: Philips Semiconductors Product specification Video driver hybrid amplifier FEATURES PINNING • Typical transition timer, 10 to 90% with C l = 10 pF: - at 35 V (p-p) swing tr = 2.2 ns; tf = 2.0 ns - at 40 V (p-p) swing tr = 2.3 ns; tf = 2.1 ns - CR3424 PIN


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    PDF CR3424 OT115L. 2600B PE1541, PM8943, PE1541 PM8943 Philips capacitor 166 Philips electrolytic 132

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


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    PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    JS8818A-AS

    Abstract: S3V 82 S3V 39
    Text: J S 8 8 1 8 A - A S FEATURES: • LOW NOISE FIGURE 1.3 dB at f = 12 GHz 2.0 dB at f = 18 GHz a 0.3 jum GATE LENGTH ■ HIGH ASSOCIATED GAIN lO d B a tf = 12 GHz 7.5 dB a t f = 18 GHz ■ CHIP FORM ■ HIGH MAXIMUM AVAILABLE GAIN 11 d B a tf = 12 GHz 9.0 dB at f = 18 GHz


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    PDF JS8818A-AS 18GHz 12GHz 12GHz 1CH7250 JS8818A-AS S3V 82 S3V 39

    gs 069 0605

    Abstract: 4210M 8016 nec 5501 gm
    Text: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim


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    PDF NE4210M01 NE4210M01 24-Hour gs 069 0605 4210M 8016 nec 5501 gm

    LPR26-RL2

    Abstract: LPS26-RL2 LPR27-ML5 LPS27-RL2 LPS27-ML5 AC250V6A AC125V3A LPS26-YL8 LPS26-ML5 LPR27-YL8
    Text: LPR &LPS « B Ä Ä tf/li & y 7 s v * Illuminated Pushbutton Switches •Features • ¿ y 'm i- # 1i o m ■ t t « u z m ^ - ^ m L x m t 0 - £ AC125V 3A • DC30V 3A


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    PDF AC125V DC30V AC1000V AC250V AC125V LPR26-RL2 LPS26-RL2 LPR27-ML5 LPS27-RL2 LPS27-ML5 AC250V6A AC125V3A LPS26-YL8 LPS26-ML5 LPR27-YL8

    transistor d 13009

    Abstract: IC 566 vco transistor j 13009 IC 8085 pin
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■


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    PDF UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin

    Darlington npn stud mount

    Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
    Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25


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    PDF 7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240