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    TD 6950 Search Results

    TD 6950 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DA14695-00HQDEVKT-P Renesas Electronics Corporation SmartBond™ DA14695 Bluetooth Low Energy 5.2 Development Kit Pro Visit Renesas Electronics Corporation
    DA14695-00000HQ2 Renesas Electronics Corporation Multi-Core Bluetooth® 5.2 SoC with System Power Management Unit Visit Renesas Electronics Corporation
    DA14695-00HQDB-P Renesas Electronics Corporation SmartBond™ DA14695 Bluetooth® Low Energy 5.2 Development Kit Pro - VFBGA86 Daughterboard Visit Renesas Electronics Corporation
    DA14695-00HQDEVKT-RANG Renesas Electronics Corporation SmartBond™ Wireless Ranging (WiRa™) Software Development Kit Visit Renesas Electronics Corporation
    DA14695-00HQDEVKT-U Renesas Electronics Corporation SmartBond™ DA14695 Bluetooth® Low Energy 5.2 USB Development Kit Visit Renesas Electronics Corporation
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    TD 6950 Price and Stock

    Lite-On Semiconductor Corporation LTD-6950HR

    DISP 7SEG 0.56" 1.5DIG RED 18DIP
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    DigiKey LTD-6950HR Tube
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    Avnet Americas LTD-6950HR Tube 1,000
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    Mouser Electronics LTD-6950HR
    • 1 $1.75
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    • 1000 $0.688
    • 10000 $0.625
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    TD 6950 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    AN569

    Abstract: MTW20N50E
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    Original     		PDF MTW20N50E/D O-247 AN569 MTW20N50E

    S 170 MOSFET TRANSISTOR

    Abstract: MTW20N50E-D TO-247 Package
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM


    Original     		PDF MTW20N50E/D O-247 MTW20N50E MTW20N50E/D* TransistorMTW20N50E/D S 170 MOSFET TRANSISTOR MTW20N50E-D TO-247 Package

    AN569

    Abstract: MTW20N50E
    Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW20N50E r14525 MTW20N50E/D AN569 MTW20N50E

    Untitled

    Abstract: No abstract text available
    Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


    Original     		PDF MTW20N50E O-247 r14525 MTW20N50E/D

    Untitled

    Abstract: No abstract text available
    Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain


    Original     		PDF 2SJ361

    td 6950

    Abstract: 2SJ361
    Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain


    Original     		PDF 2SJ361 td 6950 2SJ361

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain


    Original     		PDF 2SJ361 Hitachi DSA002713

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 10 nC APPLICATIONS


    Original     		PDF Si4890BDY Si4890BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 10 nC APPLICATIONS


    Original     		PDF Si4890BDY Si4890BDY-T1-E3 18-Jul-08

    transistor mj 1504

    Abstract: AN569 MTV20N50E SMD310 mj 1504 transistor mj 1504 scheme
    Text: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTV20N50E/D MTV20N50E MTV20N50E/D* transistor mj 1504 AN569 MTV20N50E SMD310 mj 1504 transistor mj 1504 scheme

    Si3458BDV

    Abstract: Si3458BDV-T1-E3
    Text: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS


    Original     		PDF Si3458BDV Si3458BDV-T1-E3 08-Apr-05

    Si4890BDY

    Abstract: Si4890BDY-T1-E3 69502
    Text: Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4890BDY Si4890BDY-T1-E3 Si4890BDY-T1-GE3 18-Jul-08 69502

    Untitled

    Abstract: No abstract text available
    Text: MTV20N50E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This


    Original     		PDF MTV20N50E MTV20N50E/D

    SI3458BDV-T1-GE3

    Abstract: Si3458BDV Si3458BDV-T1-E3
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 18-Jul-08

    8414 hr papst

    Abstract: No abstract text available
    Text: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum


    Original     		PDF D-78112 D-74673 D-84030 8414 hr papst

    Si3458BDV

    Abstract: Si3458BDV-T1-E3 Si3458BDV-T1-GE3
    Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 11-Mar-11

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline 2SJ361 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SJ361 Hitachi 2SJ Hitachi DSA002779

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    TDA 8841 IC

    Abstract: No abstract text available
    Text: Compact fans for AC and DC version 2014 Trendsetter in fan technology Uncompromising quality made by ebm-papst Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with


    Original     		PDF D-78112 D-74673 D-84030 TDA 8841 IC

    Untitled

    Abstract: No abstract text available
    Text: 25 Vertretungen Zubehör AC-Radiallüfter AC-Axiallüfter ACmaxx / GreenTech EC-Kompaktventilatoren DC-Lüfter - Specials DC-Radiallüfter DC-Axiallüfter Übersicht DC-Axiallüfter / DC-Diagonallüfter 2014-11 DC-Axiallüfter Informationen DC-Axiallüfter


    Original     		PDF einbin19 300-DC19 300-AC19 300-AC33 300-DC33

    MSM6950

    Abstract: No abstract text available
    Text: OKI semiconductor MSM6950B ANALOG FRONT END LSI GENERAL DESCRIPTION The M S M 6950B is an analog front-end LSI which is fabricated by O K I's low power con­ sumption CMOS silicon gate technology for modem chip set based on Bell 2 1 2A . C C IT T V . 22 and C C IT T V . 22 bis standard. The M SM 6950B consists of tw o BPFs, for lo w band


    OCR Scan     		PDF MSM6950B MSM6950B 6950B d25Hz 725Hz 2900H 1800Hz 1600H 1600Hz MSM6950

    MOSFET 20n50e

    Abstract: 20N50E motorola 20n50e gs 431 transistor
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS


    OCR Scan     		PDF MTW20N50E/D MTW20N50E 340K-01 MOSFET 20n50e 20N50E motorola 20n50e gs 431 transistor

    c 4977 transistor

    Abstract: transistor on 4977 mosfet 452 JSs 97 diode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip


    OCR Scan     		PDF MTV20N50E c 4977 transistor transistor on 4977 mosfet 452 JSs 97 diode