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    TCW NPN Search Results

    TCW NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TCW NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MLX80030

    Abstract: Melexis LIN Slave ICs TWD 1117 smd diode 1208 MLX80050 SMD resistors 10K
    Text: MLX80050/51/30/31 LIN System Basis ICs Features 1 8 EN LIN 2.x / SAE J2602 compliant MLX80030/50 5 GND 3 Operating voltage VSUP = 5 . 18 V 3 modes: Normal, Silent and Sleep 5 LIN 4 Linear low drop voltage regulator: MLX80030/31: • Normal mode 3.3V/70mA ±2%


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    PDF MLX80050/51/30/31 J2602 MLX80030/50 MLX80030/31: V/70mA V/20mA MLX80050/51: MLX80031/51 MLX80030 Melexis LIN Slave ICs TWD 1117 smd diode 1208 MLX80050 SMD resistors 10K

    TA8008F

    Abstract: TA8008
    Text: TA8008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8008F Voltage Regulator With Wake Up Timer The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5 ± 0.15V , wake up timer which can make low current


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    PDF TA8008F TA8008F 600mA TA8008

    Untitled

    Abstract: No abstract text available
    Text: TA8008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8008F VOLTAGE REGULATOR WITH WAKE UP TIMER The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5 ± 0.15V , wake up timer which can make low current


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    PDF TA8008F TA8008F 600mA

    IEC62132

    Abstract: No abstract text available
    Text: MLX80050/51/30/31 LIN System Basis ICs Features 1 8 EN LIN 2.x / SAE J2602 compliant MLX80030/50 5 GND 3 Operating voltage VSUP = 5 . 27 V 3 modes: Normal, Silent and Sleep 5 LIN 4 Linear low drop voltage regulator: MLX80030/31: • Normal mode 3.3V/70mA ±2%


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    PDF MLX80050/51/30/31 J2602 MLX80030/50 MLX80030/31: V/70mA V/20mA MLX80050/51: MLX80031/51 IEC62132

    ATA6026

    Abstract: ATA6026-PHQW JESD78 QFN32
    Text: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function


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    PDF 4865C ATA6026 ATA6026-PHQW JESD78 QFN32

    LS7055 LS7056

    Abstract: 100K preset display BCD LS7055 A3800 LS7056 digital clock diagram built by bcd segment 7-Segment Display Driver with Decoder 6 digit counter
    Text: LSI/CSI UL LS7055 LS7056 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 6 DECADE PREDETERMINING UP/DOWN COUNTER DESCRIPTION: The LS7055/LS7056 is a MOS synchronous 6 decade Up/Down counter. The circuit includes storages and comparators, zero detect, automatic presetting and resetting, output latches, multiplexed output BCD and seven segment data. Thumbwheel


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    PDF LS7055 LS7056 A3800 250kHz 150kHz LS7055/LS7056 LS7055 LS7056 100K preset display BCD LS7055 A3800 LS7056 digital clock diagram built by bcd segment 7-Segment Display Driver with Decoder 6 digit counter

    smd diode schottky code marking 1A

    Abstract: voltage follower TLE 6368 TRANSISTOR SMD MARKING CODE 2A P-DSO-36-12 g1 TRANSISTOR SMD MARKING CODE SMD Step-Down Voltage Regulator AEA03380ZR B82479 Q67007-A9648
    Text: TLE 6368 / SONIC Multi-Voltage Processor Power Supply Data Sheet 1 Overview 1.1 Features • • • • • • • • • • • • • • • High efficiency regulator system Wide input voltage range from 5.5V to 60V Stand-by mode with low current consumption


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    PDF 2V/24V 800mA 500mA 350mA smd diode schottky code marking 1A voltage follower TLE 6368 TRANSISTOR SMD MARKING CODE 2A P-DSO-36-12 g1 TRANSISTOR SMD MARKING CODE SMD Step-Down Voltage Regulator AEA03380ZR B82479 Q67007-A9648

    6-DIGIT DECADE COUNTER

    Abstract: No abstract text available
    Text: LSI/CSI UL LS7055 LS7056 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 6 DECADE PREDETERMINING UP/DOWN COUNTER January 2003 DESCRIPTION: The LS7055/LS7056 is a MOS synchronous 6 decade Up/Down


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    PDF LS7055 LS7056 A3800 250kHz 150kHz LS7055/LS7056 6-DIGIT DECADE COUNTER

    seven segment circuit diagram us

    Abstract: LS7055 A3800 LS7056 COUNTER LED bcd Digital Pulse Counter - Two Digit by seven segment display BCD BCD counter circuit diagram max plus counter up down with preset
    Text: LSI/CSI UL LS7055 LS7056 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 6 DECADE PREDETERMINING UP/DOWN COUNTER DESCRIPTION: The LS7055/LS7056 is a monlithic, ion implanted MOS synchronous 6 decade Up/Down counter. The circuit includes storages and comparators, zero detect, automatic presetting and resetting, output latches, multiplexed output BCD and seven


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    PDF LS7055 LS7056 A3800 250kHz 150kHz LS7055/LS7056 seven segment circuit diagram us LS7055 A3800 LS7056 COUNTER LED bcd Digital Pulse Counter - Two Digit by seven segment display BCD BCD counter circuit diagram max plus counter up down with preset

    Untitled

    Abstract: No abstract text available
    Text: LSI/CSI UL LS7055 LS7056 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 6 DECADE PREDETERMINING UP/DOWN COUNTER DESCRIPTION: The LS7055/LS7056 is a MOS synchronous 6 decade Up/Down counter. The circuit includes storages and comparators, zero detect, automatic presetting and resetting, output latches, multiplexed output BCD and seven segment data. Thumbwheel


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    PDF LS7055 LS7056 A3800 250kHz 150kHz LS7055/LS7056

    TCW NPN

    Abstract: No abstract text available
    Text: 2SC2618 S iü C O N NPN E P IT A X iA î.^ LOW FREQUENCY AMPLIFIER Ccfftptarftftftiary pair wilh 2SA1121 ,» S ,.x^ . _ .,*»* r 1^ *l i t °,. & « _ » | i 1 J S r5 - v \ ï >î : : . * «* *Jf ; ’ ?* * « * ! J —s . ' * ? . î2! U-J Ï t ~ • °


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    PDF 2SC2618 2SA1121 50nsA. 2SC1213. TCW NPN

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TA8008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8008F VOLTAGE REGULATOR WITH W AKE UP TIMER The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5 ± 0.15V , wake up timer which can make low


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    PDF TA8008F TA8008F 600mA SSOP16-P-225-1

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TA8008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8 0 0 8 F VOLTAGE REGULATOR WITH W AKE UP TIMER The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5±0.15V , wake up timer which can make low


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    PDF TA8008F TA8008F 600mA SSOP16-P-225-1

    TA8008F

    Abstract: No abstract text available
    Text: TOSHIBA TA8008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8008F VOLTAGE REGULATOR WITH W AKE UP TIMER The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5 ± 0.15V , wake up timer which can make low


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    PDF TA8008F TA8008F 600mA SSOP16-P-225-1

    TA8008F

    Abstract: chip 8202
    Text: TO SHIBA TA8008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8008F VOLTAGE REGULATOR WITH W AKE UP TIMER The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5 ± 0.15V , wake up timer which can make low


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    PDF TA8008F TA8008F 600mA SSOP16-P-225-1 chip 8202

    2N3055 TO-220

    Abstract: bd139 sot 32 BD139 2N3055 TO220 2n3771 to220 2n3055 to 220 darlington bd139 bd711 2N5415
    Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE NPN VcEO VcBO VcES VcEV ic Ptot V (V) (A) (W) 60 350 250 40 60 80 80 90 80 60 80 80 100 200 300 350 120 100 120 80 80 80 60 60 100 70 30 100 100 60 ' ¿0 70 90 50 70 400 90 80 45 45 60 60 80 80 80 80 80 45 60 60


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    PDF 2N3055 2N3439 2N3440 2N3771 2N3772 1BD435 BD436 BD437 BD438 BD439 2N3055 TO-220 bd139 sot 32 BD139 2N3055 TO220 2n3771 to220 2n3055 to 220 darlington bd139 bd711 2N5415

    JIDC

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S


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    PDF 2N930JAN, MIL-S-19500/253 -65IO200 JIDC

    Untitled

    Abstract: No abstract text available
    Text: NN511000 series Fast Page Mode CMOS 1Mx 1bit Dynamic RAM NPN a DESCRIPTION The NN511000 series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 1 bit. The NN511000 series is fabricated with advanced CMOS technology and designed with innovative design tech­


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    PDF NN511000 G001375 000137b NH511000 NN511000XX-X 128ms

    2SC2538

    Abstract: TRANSISTOR 2SC2538 equivalent dmb transistor transistor BA RW ET11 2SC2S38 i7050 2Sc2538 equivalent
    Text: M fT S U ß JS H I R F P O W E R T R A N S IS T O R 2SC2538 NPN E P IT A X IA L PLA N A R T Y P E D E S C R IP T IO N 2SC 2 S3 8 it a u Iico n N PN epitaxial planar type transistor b«»grxsd for R F am plifiers on V H F band m obile radio applications. OUTLINE DRAWING


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    PDF 2SC2538 2SC2538 TRANSISTOR 2SC2538 equivalent dmb transistor transistor BA RW ET11 2SC2S38 i7050 2Sc2538 equivalent

    Untitled

    Abstract: No abstract text available
    Text: NN51V4265A series EDO Hyper Page Mode CMOS 256 K x 16bit Dynamic RAM NPN/À DESCRIPTION The N N 51V4265A series is a high perform ance C M OS D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The NN51V4265A series is fabricated with advanced C M OS technology and designed with innovative design


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    PDF NN51V4265A 16bit 51V4265A T005bS0 00013b0 NHS1V426SA OS256KX NN51V4265AXXI

    Untitled

    Abstract: No abstract text available
    Text: NN514256 seríes Fast Page Mode CMOS 256Kx4bit Dynamic RAM NPN a DESCRIPTION The NN514256 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256 series is fabricated with advanced CMOS technology and designed with innovative design tech­


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    PDF NN514256 256Kx4bit 256KX NN514256XX 128ms

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


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    PDF BU2527AX 1E-06 1E-04

    NEC 424400-80

    Abstract: NEC 424400-60
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The JUPD424400 is a 1,048,576 w ords by 4 bits CMOS dynam ic RAM. The fast page mode capability realizes high speed access and low power consum ption.


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    PDF UPD424400 JUPD424400 26-pin 1PD424400-70 NEC 424400-80 NEC 424400-60

    Untitled

    Abstract: No abstract text available
    Text: NN514100A series Fast Page Mode CMOS 4M x 1bit Dynamic RAM NPN a DESCRIPTION The NN514100A series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100A series is fabricated with advanced CMOS technology and designed with innovative design tech­


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    PDF NN514100A NN514100AL NN5141 128ms NN514100A