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    1SV147

    Abstract: RR23 251C TOSHIBA LABLE
    Text: TOSHIBA b? {DISCRETE/OPTO} 9097250 TOSHIBA D eTJ TCH755D OOO^bfl □ <D I S C R E T E / O P T O > 67C 09368 Silicon Epitaxial Planar Type " P 7 c o7-/’7 1SV147 Variable Capacitance Diode FM RADIO BAND TUNING APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS Ta=25°C


    OCR Scan     		PDF TCH755D 1SV147 rr23/ 1SV147 RR23 251C TOSHIBA LABLE

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OP T03- ^ 0 1 7 2 5 0 9097250 TOSHIBA DISCRETE/OPTO ¿/iuhihi 90D SEMICONDUCTOR 16339 DDltaa*! L DT'23'3£ TOSHIBA G-TR MODULE MG75M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG75M2CK1 75M2c TCH755D DD1L343 r-33-35 0Dlb344 T-33-35'

    TIM5053-4

    Abstract: No abstract text available
    Text: TIM5053-4 FEATURES: • HIGH POWER PldB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G-|dB = 9.5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS O u tp u t Power


    OCR Scan     		PDF TIM5053-4 2-11D1B) 2601C. TCH7250 TIM5053-4