Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TC58NYG1S3EBAI4 Search Results

    SF Impression Pixel

    TC58NYG1S3EBAI4 Price and Stock

    Toshiba Electronic Devices & Storage Corporation TC58NYG1S3EBAI4

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC58NYG1S3EBAI4 16
    • 1 $12
    • 10 $8
    • 100 $8
    • 1000 $8
    • 10000 $8
    		Buy Now

    TC58NYG1S3EBAI4 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NYG1S3EBAI4 Toshiba TC58NYG1S3 - IC FLASH 1.8V PROM, Programmable ROM Original PDF

    TC58NYG1S3EBAI4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0 PDF

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25 PDF