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    TC55W Price and Stock

    Toshiba America Electronic Components TC55WD1618FF-133

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55WD1618FF-133 20
    • 1 $4.41
    • 10 $2.205
    • 100 $2.205
    • 1000 $2.205
    • 10000 $2.205
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    Toshiba America Electronic Components TC55WD1618FF133

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55WD1618FF133 20
    • 1 $4.41
    • 10 $2.205
    • 100 $2.205
    • 1000 $2.205
    • 10000 $2.205
    		Buy Now

    Toshiba America Electronic Components TC55WD818FF133TRA

    524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC55WD818FF133TRA 2
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    Toshiba America Electronic Components TC55WD818FF150YJ

    524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM ZBT SRAM, 512KX18, 3.8ns, CMOS, PQFP100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC55WD818FF150YJ 2
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    Toshiba America Electronic Components TC55WD1618FF167

    1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM Standard SRAM, 1MX18, 3.6ns, CMOS, PQFP100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC55WD1618FF167 2
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    TC55W Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55W1600FT Toshiba 1,048,576-Word BY 16-BIT/2,097,152-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55W1600FT-55 Toshiba 1,048,576-Word BY 16-BIT/2,097,152-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55W1600FT-55 Toshiba 1,048,576 Word By 16 Bit/2,097,152 Word By 8 Bit Full CMOS Static RAM Scan PDF
    TC55W1600FT-55 Toshiba Scan PDF
    TC55W1600FT-70 Toshiba 1,048,576-Word BY 16-BIT/2,097,152-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55W1600FT-70 Toshiba 1,048,576 Word By 16 Bit/2,097,152 Word By 8 Bit Full CMOS Static RAM Scan PDF
    TC55W1600FT-70 Toshiba Scan PDF
    TC55W1600XB7 Toshiba 1,048,576 Word By 16 Bit Full CMOS Static RAM Scan PDF
    TC55W1600XB7 Toshiba Scan PDF
    TC55W1600XB8 Toshiba 1,048,576 Word By 16 Bit Full CMOS Static RAM Scan PDF
    TC55W1600XB8 Toshiba Scan PDF
    TC55W400XB5 Toshiba 256K x 16 Low-Power Static RAMs Original PDF
    TC55W400XB7 Toshiba 256K x 16 Low-Power Static RAMs Original PDF
    TC55W800FT Toshiba Original PDF
    TC55W800FT-55 Toshiba 524,288 Word by 16 Bit/1,048,576 Word by 8 Bit Full CMOS Static RAM Original PDF
    TC55W800FT-55 Toshiba Scan PDF
    TC55W800FT-70 Toshiba 524,288 Word by 16 Bit/1,048,576 Word by 8 Bit Full CMOS Static RAM Original PDF
    TC55W800FT-70 Toshiba Scan PDF
    TC55W800XB7 Toshiba 524,288 Word by 16 Bit Full CMOS Static RAM Original PDF
    TC55W800XB7 Toshiba Scan PDF

    TC55W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC55W400XB5

    Abstract: No abstract text available
    Text: TC55W400XB5,7 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W400XB is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V


    Original     		TC55W400XB5 144-WORD 16-BIT TC55W400XB 304-bit PDF

    TC55W800FT

    Abstract: TC55W800FT-55
    Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16


    Original     		TC55W800FT-55 288-WORD 16-BIT/1 576-WORD TC55W800FT 608-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: TC55W800XB7,8 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800XB is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V


    Original     		TC55W800XB7 288-WORD 16-BIT TC55W800XB 608-bit PDF

    TC55W800XB7

    Abstract: No abstract text available
    Text: TC55W800XB7,8 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800XB is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V


    Original     		TC55W800XB7 288-WORD 16-BIT TC55W800XB 608-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: TC55W400XB5,7 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W400XB is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V


    Original     		TC55W400XB5 144-WORD 16-BIT TC55W400XB 304-bit PDF

    LQFP-100

    Abstract: No abstract text available
    Text: TOSHIBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55WD1618FF-133 TC55WD1618FF LQFP100-P-1420-0 LQFP-100 PDF

    A110

    Abstract: TC55W1600FT TC55W1600FT-55 48-P-1220-0
    Text: T O S H IB A TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55W1600FT-55 576-WORD 16-BIT/2 152-WORD TC55W1600FT 216-bit 48-P-1220-0 A110 PDF

    TC55W1600XB7

    Abstract: No abstract text available
    Text: T O S H IB A TC55W 1600XB7#8 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600XB is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55W1600XB7 576-WORD 16-BIT TC55W1600XB 216-bit P-FBGA48-1012-0 PDF

    TC55WD1618FF

    Abstract: TC55WD1618FF-133 XX10
    Text: TO SH IBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55WD1618FF-133 576-WORD 18-BIT TC55WD1618FF LQFP100-P-1420-0 XX10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55WD1618FF-133 TC55WD1618FF LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC55W1600FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55W1600FT-55 TC55W1600FT 216-bit 48-P-1220-0 TC55W1600FT-55f-70 PDF

    TC55W800FT

    Abstract: TC55W800FT-55
    Text: TOSHIBA TC55W800FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16


    OCR Scan     		TC55W800FT-55 288-WORD 16-BIT/1 576-WORD TC55W800FT 608-bit 48-P-1220-0 PDF

    TC55WD836FF

    Abstract: TC55WD836FF-133
    Text: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36


    OCR Scan     		TC55WD836FF-133 144-WORD 36-BIT TC55WD836FF LQFP1OO-P-1420-0 PDF

    TC55WD1636FF

    Abstract: TC55WD1636FF-133
    Text: TOSHIBA TC55WD1636FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1636FF is a synchronous static random access memory SRAM organized as 524,288 words by 36


    OCR Scan     		TC55WD1636FF-133 288-WORD 36-BIT TC55WD1636FF LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by


    OCR Scan     		TC55WD1618FF-133 TC55WD1618FF LQFP100-P-1420-0 PDF

    Q1/267/M

    Abstract: No abstract text available
    Text: TO SH IBA TC55WK836FF-333,-267 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55WK836FF is a 9,437,184-bit synchronous static random access memory SRAM organized as 262,144 words by 36 bits. It is designed for use as a secondary cache in applications where high


    OCR Scan     		TC55WK836FF-333 144-WORD 36-BIT TC55WK836FF 184-bit Q1/267/M PDF

    TC55WL1636FF-75

    Abstract: No abstract text available
    Text: TOSHIBA TC55WL1636FF-75#-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WL1636FF is a synchronous static random access memory SRAM organized as 524,288 words


    OCR Scan     		TC55WL1636FF-75 288-WORD 36-BIT TC55WL1636FF LQFP100-P-1420-0 PDF

    TC55WK837XB-333

    Abstract: No abstract text available
    Text: TO SH IBA TC55WK837XB-333,-300 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55WK837XB is a 9,437,184-bit synchronous static random access memory SRAM organized as 262,144 words by 36 bits. It is designed for use as a secondary cache in applications where high


    OCR Scan     		TC55WK837XB-333 144-WORD 36-BIT TC55WK837XB 184-bit P-BGA153-1422-1 PDF

    TC55WD836FF

    Abstract: TC55WD836FF-133
    Text: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36


    OCR Scan     		TC55WD836FF-133 144-WORD 36-BIT TC55WD836FF LQFP1OO-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC55WK818FF-333,-267 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55WK818FF is a 9,437,184-bit synchronous static random access memory SRAM organized as 524,288 words by 18 bits. It is designed for use as a secondary cache in applications where high


    OCR Scan     		TC55WK818FF-333 288-WORD 18-BIT TC55WK818FF 184-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55WD1636FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1636FF is a synchronous static random access memory SRAM organized as 524,288 words by 36


    OCR Scan     		TC55WD1636FF-133 TC55WD1636FF LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C 55W L1618FF -75,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WL1618FF is a synchronous static random access memory SRAM organized as 1,048,576


    OCR Scan     		L1618FF TC55WL1618FF LQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55WD818FF-133f-150f-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD818FF is a synchronous static random access memory SRAM organized as 524,288 words by 18


    OCR Scan     		TC55WD818FF-133f-150f-167 TC55WD818FF LQFP100-P-1420-0 PDF

    TC55W800XB7

    Abstract: No abstract text available
    Text: TO SH IBA TC55W800XB7,8 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800XB is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.3


    OCR Scan     		TC55W800XB7 288-WORD 16-BIT TC55W800XB 608-bit P-TFBGA48-0811-0 PDF