M5M23160
Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1
|
Original
|
PDF
|
16-Meg
MSM5116160
MSM5116400
MSM5117100
MSM5117400
MSM5117800
MSM51V16100
MSM51V16160
MSM51V16400
MSM51V17100
M5M23160
TC5117400
oki cross
kmm5322000a
THM324080AS
lh538000
424100
IBM025161
MC-421000A36
uPD482445
|
TC5117800bnt-60
Abstract: TC5117800B
Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
|
OCR Scan
|
PDF
|
TC5117800BNJ/BNT-60/70
TC5117800BNT
TC5117800bnt-60
TC5117800B
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator
|
OCR Scan
|
PDF
|
TC5117800BNJ/BNT-60/70
715mW
TC5117800BNT-60)
605mW
TC5117800BNT-70)
|
schottky CST
Abstract: h28p CST50 tc5117800cft
Text: TOSHIBA TC5117800CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5117800CJ/CFT/CST is a fast page dynamic RAM organized as 2,097,152 words by 8 bits. The
|
OCR Scan
|
PDF
|
TC5117800CJ/CFT/CST-50
152-WORD
TC5117800CJ/CFT/CST
28-pin
TC51178Q0CJ/CFT/CST
SOJ28
schottky CST
h28p
CST50
tc5117800cft
|
TC5118160
Abstract: c51v tc5118180
Text: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152
|
OCR Scan
|
PDF
|
16800ANJ/ANT-60
16800ANJ/ANT-70
TC5117800ANJ/ANT-60
17800ANJ/ANT-70
TC51V16800AN
J/ANT-70
V17800ANJ/ANT-70
TC5116900AJ/AFT-60
16900AJ/AFT-70
17900AJ/AFT-60
TC5118160
c51v
tc5118180
|
A249
Abstract: No abstract text available
Text: TOSHIBA TC511780QANJ/ANT-60/70/80 2,097,152 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC5117800A series is the new generation dynamic RAM organized 2,097,152 word by 8 bit. The TC5117800A series utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
|
OCR Scan
|
PDF
|
TC511780QANJ/ANT-60/70/80
TC5117800A
I/01-I/07)
TC5117800AJ/ANJ/AZ/ANZ/AFT/ANT/ATR/
1MX16
A249
|
Untitled
Abstract: No abstract text available
Text: r O S H IB A TC5117800ANJ/ANT-60/70/80 2,097,152 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC5117800A series is the new generation dynamic RAM organized 2,097,152 w ord by 8 bit. The TC5117800A series utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit
|
OCR Scan
|
PDF
|
TC5117800ANJ/ANT-60/70/80
TC5117800A
117800A
1MX16
TCH724Ã
|
VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
|
OCR Scan
|
PDF
|
256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
|
TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
|
OCR Scan
|
PDF
|
015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
|
intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
|
OCR Scan
|
PDF
|
51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
|
TC5118160
Abstract: tc514170 ti67 TC514273 QFP100-P-2222-0 95c061b P54C tc5117800 P2222 TMP95C061B
Text: TOSHIBA TMP95C061B CMOS 16-bit MICROCONTROLLER TMP95C061BF 1. OUTLINE AND DEVICE CHARACTERISTICS TM P95C061BF is high-speed advanced 16-bit m icrocontroller developed for controlling medium to large-scale equipment. TMP95C061BF is housed in an 100-pin mini flat package QFP100-P-1414-0.50 . TMP95C061BEF is housed in QFP100-P2222-0.80A package.
|
OCR Scan
|
PDF
|
TMP95C061B
16-bit
TMP95C061BF
TMP95C061BF
100-pin
QFP100-P-1414-0
TMP95C061BEF
QFP100-P-2222-0
TC5118160
tc514170
ti67
TC514273
95c061b
P54C
tc5117800
P2222
TMP95C061B
|
tc5118160
Abstract: TC514273
Text: TOSHIBA TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/H Series TMP95C061B TOSHIBA CORPORATION Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section," Points of Note and Restrictions". Especially, take care below cautions.
|
OCR Scan
|
PDF
|
16-Bit
TLCS-900/H
TMP95C061B
95C061B-206
tc5118160
TC514273
|
tc5117805
Abstract: No abstract text available
Text: TO SH IBA TC51 17805CJS/CFTS/CSJS/CSTS-60 TENTATIVE TOSHIBA 8IPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-W ORD BY 8-BIT EDO HYPER PAGE DYN AM IC RAM DESCRIPTION The TC5117805CJS/CFTS/CSJS/CSTS is an EDO (hyper pa :e) dynamic RAM organized as 2,097,152 words
|
OCR Scan
|
PDF
|
17805CJS/CFTS/CSJS/CSTS-60
TC5117805CJS/CFTS/CSJS/CSTS
TC5117800CJS/CFTS/CSJS/CSTS
TC5117805I3NJS/BNTS
28-pin
E0-S0-Z661
82TOS)
09-SlSD/SrSD/Sld3/SrDS08
TC5117805CJS/CFTS/CSJS/CSTS-60-
tc5117805
|