UC3861 application note
Abstract: No abstract text available
Text: 1 1 |application INFO available | UNITRODE UC1861-1868 UC2861-2868 UC3861-3868 Resonant-Mode Power Supply Controllers FEATURES DESCRIPTION • Controls Zero Current Switched ZCS or Zero Voltage Switched (ZVS) Quasi-Resonant Converters The UC1861-1868 family of ICs is optimized for the control of Zero Cur
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UC1861-1868
UC2861-2868
UC3861-3868
10kHz
UC3861-3868
UC3861 application note
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10ST10
Abstract: lq55
Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
10ST10
lq55
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16C256
Abstract: KM416C256DJ
Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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1C256D
256Kx16
40SOJ
KM416C256DJ
16C256
KM416C256DJ
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Untitled
Abstract: No abstract text available
Text: *4 im f T U n t N LT1137A l TECHNOLOGY Advanced Low Power 5V RS232 Transceiver with Small Capacitors June, 1992 DCSCftlPTION F€ATUR€S • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ESD Protection over ±10kV Uses Small Capacitors 0.1 nF, 0.2^F
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LT1137A
RS232
LT1137
120kbaud
Power-60mW
Protection-RS232
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Untitled
Abstract: No abstract text available
Text: u>p E Mob Advanced Linear Devices ALD4302A/ALD4302 QUAD CMOS COMPARATOR AND DRIVER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 4302 is a monolithic quad high performance voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of I0 12i2; low input bias
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ALD4302A/ALD4302
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Untitled
Abstract: No abstract text available
Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér
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KM44C
KM44C1003DJ
G03416B
00341f
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Untitled
Abstract: No abstract text available
Text: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
416C256DT
b4142
003055b
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rbbb
Abstract: No abstract text available
Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416V254DJ
256Kx16
DQ0-DQ15
rbbb
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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KM44C4105BK
003470b
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Untitled
Abstract: No abstract text available
Text: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3B is a 2M bit x 72 Dynamic RAM high density memory module. The
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KMM374F203BK
KMM374F213BK
KMM374F213BK
2Mx72
KMM374F20
300mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time
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KM44C4003BS
D344bfl
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Untitled
Abstract: No abstract text available
Text: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM48C2004BK
16Mx4,
512Kx8)
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KM44C4000B
Abstract: No abstract text available
Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4000B
KM44C4000BS
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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16Mx4,
512Kx8)
KM48C2104BK)
KM48C2104BK
7ib414E
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Untitled
Abstract: No abstract text available
Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44C1004C,
KM44V1004C
b41H2
Q0231Ã
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MT43C8129A
Abstract: DRAM 256X8 8129A MT43C
Text: M T43C 8128A /9A 128K X 8 T R IP L E -P O R T DRAM M IC R O N I fMILOKUUCIOH. INI 128K X 8 DRAM WITH DUAL 256 X 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, d ata access ports Fast access times: 70ns random , 22ns serial
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350mW
512-cycle
048-bit
MT43C8128A/9A
MT43C8129A
DRAM 256X8
8129A
MT43C
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40-6F
Abstract: No abstract text available
Text: LTKOOl TECH N O LO G Y Therm ocouple C o ld Junction Com pensator and M atch ed Amplifier F€ATUR€S and extremely low input bias currents <600pA to allow • 0 .75 °C Initial Accuracy (A Version) ■ Extrem ely Lo w W arm up Drift offset voltage or drift.
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480/tA
600pA)
LTK001
40-6F
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DBL2044
Abstract: NEI 2044 Sat Tuner Application Note BW TV Tuner DS442
Text: -TUNER BAND SELECTOR FOR TV SETS V_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The DBL 2044 is an 1C for tuner band selection of electronic tuning type television set. This 1C is used
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DBL2044
NEI 2044
Sat Tuner Application Note
BW TV Tuner
DS442
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KM44V4100BS
Abstract: Oi24 A10QZ
Text: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44V4100BS
16Mx4,
512Kx8)
b414E
7Tb4142
KM44V4100BS
Oi24
A10QZ
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41C1000
Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000C
KM41C1000C
576x1
KM41C1000C-6
KM41C1000C-7
KM41C100
20-LEAD
41C1000
KM41C1000CJ-7
1mx1 DRAM DIP
41C100
KM41C1000C-8
KM41C1000CJ7
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Untitled
Abstract: No abstract text available
Text: KM718V895 256Kx18 Synchronous SRAM 256Kx18-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined Operation With 4 Buret • On-Chip Address Counter. • Self-Timed Write Cyde. • On-Chip Address and Control Registers.
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KM718V895
100-TQFP-1420A
256Kx18
25SKx1S
256KX18
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LTI025
Abstract: 1amj
Text: LTKOOl TECHNOLOGY Thermocouple Cold Junction Compensator and M atched Amplifier F€ATUR€S and extremely low input bias currents <600pA to allow • 0 .75 °C Initial Accuracy (A Version) ■ Extrem ely Lo w W arm up Drift offset voltage or drift. high impedance input filters to be used without degrading
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480/tA
600pA)
LTK001
LTI025
1amj
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NE5020N
Abstract: 1n4148 ITT NE5020 NE5020F DAC 8 bits 0-10v
Text: Philips Semiconductors Linear Products Product specification 10-B¡t fiP-compatible D/A converter DESCRIPTION NE5020 PIN CONFIGURATION The NE5020 is a microprocessor-compatible monolithic 10-bit digital-to-analog converter subsystem. This device offers 10-bit
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10-Bit
NE5020
9023V.
711005b
NE5020N
1n4148 ITT
NE5020F
DAC 8 bits 0-10v
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4794A CMOS LSI I N0.4794A LC3564S, SM, SS-70/85/10 64K 8192 words x 8 bits SRAM O ve rview The LC3564S, LC3564SM, and LC3564SS are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type SRAMS with a sixtransistor memory cell and feature high-speed
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EN4794A
LC3564S,
SS-70/85/10
LC3564SM,
LC3564SS
8192-word
TaS85
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