H5128
Abstract: CY27H512
Text: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package
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CY27H512
28pin,
600mil
32pin
28pin
40MHz
H5128
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CY27H512
Abstract: No abstract text available
Text: fax id: 3020 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected
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CY27H512
32-pin
28-pin
28-pin,
600-mil
CY27H512
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CY27H512-25JC
Abstract: CY27H512 CY27H512-25ZC 27H512-25 27H512-30 H5121 H5128
Text: 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization
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CY27H512
32-pin
28-pin
28-pin,
600-mil
CY27H512
CY27H512-25JC
CY27H512-25ZC
27H512-25
27H512-30
H5121
H5128
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h2566
Abstract: H2567 H2563 H2565 H256 H2568 H256-4 CY27H256 CY27H256-25JC CY27H256-25ZC
Text: fax id: 3014 1CY 27H2 56 CY27H256 32K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization
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CY27H256
32-pin
28-pin
28-pin,
600-mil
CY27H256
h2566
H2567
H2563
H2565
H256
H2568
H256-4
CY27H256-25JC
CY27H256-25ZC
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CY7C1018BV33
Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
Text: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power
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CY7C1018CV33
CY7C1018BV33
300-mil-wide
32-pin
CY7C1018CV33
CY7C1018BV33
CY7C1018CV33-10VC
CY7C1018CV33-12VC
CY7C1018CV33-12VXI
CY7C1018CV33-15VXC
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Untitled
Abstract: No abstract text available
Text: CY7C1021D PRELIMINARY 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1021B • High speed — tAA = 10 ns • CMOS for optimum speed/power
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CY7C1021D
CY7C1021B
44-pin
400-mil
CY7C1021D
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CY7C1018BV33
Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
Text: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power
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CY7C1018CV33
CY7C1018BV33
300-mil-wide
32-pin
CY7C1018CV33
CY7C1018BV33
CY7C1018CV33-10VC
CY7C1018CV33-12VC
CY7C1018CV33-12VXI
CY7C1018CV33-15VXC
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CY7C1019CV33-15VC
Abstract: CY7C1019CV33-12ZXC CY7C1019BV33 CY7C1019CV33 CY7C1019CV33-10VC CY7C1019CV33-10ZXC CY7C1019CV33-10ZXI CY7C1019CV33-12VC CY7C1019CV33-12ZC
Text: CY7C1019CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin and function compatible with CY7C1019BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power
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CY7C1019CV33
CY7C1019BV33
I//11/02
48-ball
CY7C1019CV33-15VC
CY7C1019CV33-12ZXC
CY7C1019BV33
CY7C1019CV33
CY7C1019CV33-10VC
CY7C1019CV33-10ZXC
CY7C1019CV33-10ZXI
CY7C1019CV33-12VC
CY7C1019CV33-12ZC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1020D 512K 32K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1020B • High speed — tAA = 10 ns • CMOS for optimum speed/power
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CY7C1020D
CY7C1020B
44-pin
400-mil
I/O16
I/O15
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Untitled
Abstract: No abstract text available
Text: CY7C1019CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin and function compatible with CY7C1019BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power
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CY7C1019CV33
CY7C1019BV33
48-ball
32-pin
400-mil
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WCF1008C3E
Abstract: WCFS1008C3E WCFS1008C3E-JC12 WCFS1008C9E WCFS1008C9E-JC12
Text: WCFS1008C3E CFS1008C9E WCFS1008C3E WCFS1008C9E 128K x 8 Static RAM Features • High speed — tAA = 12 ns • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2, and OE options
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WCFS1008C3E
CFS1008C9E
WCFS1008C9E
WCF1008C3E
WCFS1008C9E
tC9E-JC12
32-Lead
300-Mil)
WCFS1008C3E-JC15
WCFS1008C3E
WCFS1008C3E-JC12
WCFS1008C9E-JC12
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CY7C1399B
Abstract: CY7C1399D
Text: CY7C1399D PRELIMINARY 256K 32K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1399B • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — tAA = 8 ns • Low active power
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CY7C1399D
CY7C1399B
28-SOJ
28-TSOP
CY7C1399D
CY7C1399B
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CY7C1399B
Abstract: CY7C1399D TRC40
Text: CY7C1399D PRELIMINARY 256K 32K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1399B • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — tAA = 8 ns • Low active power
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CY7C1399D
CY7C1399B
28-SOJ
28-TSOP
CY7C1399D
CY7C1399B
TRC40
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CY7C1069AV33
Abstract: No abstract text available
Text: CY7C1069AV33 2M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished
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CY7C1069AV33
CY7C1069AV33
54-pin
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4kx4 ram
Abstract: CY7C168A 7C168A 7C168A-45
Text: CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs
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CY7C168A
CY7C168A
4kx4 ram
7C168A
7C168A-45
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CY7C1061DV33-10BVXI
Abstract: CY7C1061DV33 CY7C1061DV33-10ZXI TSOP 54 thermal resistance CY7C1061 TSOP II 54 Package
Text: CY7C1061DV33 PRELIMINARY 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061DV33 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip
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CY7C1061DV33
16-Mbit
CY7C1061DV33
I/O15)
48-ball
CY7C1061DV33-10BVXI
CY7C1061DV33-10ZXI
TSOP 54 thermal resistance
CY7C1061
TSOP II 54 Package
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CY7C1011DV33-10ZSXI
Abstract: No abstract text available
Text: CY7C1011DV33 2-Mbit 128K x 16 Static RAM Features Functional Description • Pin-and function-compatible with CY7C1011CV33 • High speed The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128K words by 16 bits. — tAA = 10 ns • Low active power
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CY7C1011DV33
CY7C1011CV33
44-pin
48-ball
CY7C1011DV33
-10BVI
CY7C1011DV33-10ZSXI
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Untitled
Abstract: No abstract text available
Text: CY7C1062DV33 PRELIMINARY 16-Mbit 512K X 32 Static RAM Features Functional Description • High speed The CY7C1062DV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip
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CY7C1062DV33
16-Mbit
119-ball
CY7C1062DV33
48-pin
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Untitled
Abstract: No abstract text available
Text: CY7C1062DV33 PRELIMINARY 16-Mbit 512K X 32 Static RAM Features Functional Description • High speed The CY7C1062DV33 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip
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CY7C1062DV33
16-Mbit
119-ball
CY7C1062DV33
48-pin
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LC 7258
Abstract: No abstract text available
Text: CYPRESS • CMOS for optimum speed/power • High speed — tAA = 25 ns max. com m ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide mem ory organization 100% reprogram m able in the windowed package
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28-pin,
600-mil
32-pin
28-pin
40-MHz
CY27H512
LC 7258
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C520
Abstract: ar1318 CY27H512 CY27H512-25JC CY27H512-25ZC CY27H512-30JC
Text: ,.V. Ï. Ï. V. ^ynr' Æ CYPRESS • CMOS fo r optimum speed/power • High speed — tAA = 25 ns max. comm ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide memory organization 100% reprogramm able in the windowed package
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CY27H512
32-pin
28-pin
28-pin,
600-mil
CY27H512
C520
ar1318
CY27H512-25JC
CY27H512-25ZC
CY27H512-30JC
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Untitled
Abstract: No abstract text available
Text: 7c109A: Thursday, November 19,1992 Revision: Thursday, February 18,1993 CY7C109A PRELIMINARY CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW
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7c109A:
CY7C109A
CY7C109A
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Untitled
Abstract: No abstract text available
Text: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A
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7C101A:
CY7C101A
CY7C102A
7C101A)
CY7C101Aand
CY7C102Aare
in982.
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Untitled
Abstract: No abstract text available
Text: CYPRESS MbE SEMICONDUCTOR BSö^bba aaati7Gt. 3 D CY7C1009 ADVANCED INFORMATION “ CYPRESS SEMICONDUCTOR 128K x 8 Static R/W RAM Functional Description Features • Highspeed — tAA = 15 ns • CMOS for optimum speed/power • Low active power — 825 mW
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CY7C1009
CY7C1009
ri1/04
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