IRF620 application
Abstract: TA9600 IRF620 TB334 transistor irf620
Text: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF620
TA9600.
IRF620 application
TA9600
IRF620
TB334
transistor irf620
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IRFF220
Abstract: TA9600 TB334
Text: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF220
IRFF220
TA9600
TB334
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transistor irf620
Abstract: No abstract text available
Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF620
TB334
IRF620
transistor irf620
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Untitled
Abstract: No abstract text available
Text: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF220
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IRF620
Abstract: IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris
Text: IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF620,
IRF621,
IRF622,
IRF623
IRF620
IRF621
TB334
IRF620 HARRIS
IFR622
IFR623
IRF622
IRF623
TA9600
IRF623 harris
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ifr220
Abstract: IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334
Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR220,
IRFU220
TA9600.
ifr220
IFU220
JEDEC TO-251AA
IRFR220
IRFU220
TA9600
TB334
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ifr220
Abstract: No abstract text available
Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR220,
IRFU220
TA9600.
ifr220
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ifr220
Abstract: IFU220 IRFU220 irfr220 IRFR222 IRFU221
Text: IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 S E M I C O N D U C T O R 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221,
IRFU222
TA9600.
ifr220
IFU220
IRFU220
irfr220
IRFR222
IRFU221
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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IRFF223
Abstract: No abstract text available
Text: IRFF220, IRFF221, IRFF222, IRFF223 S E M I C O N D U C T O R 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF220,
IRFF221,
IRFF222,
IRFF223
TA9600.
IRFF223
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ifr220
Abstract: IFU220 IRFR220 IRFU220 TA9600 TB334
Text: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR220,
IRFU220
TA9600.
ifr220
IFU220
IRFR220
IRFU220
TA9600
TB334
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IRFF220
Abstract: TA9600 TB334
Text: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF220
TB334
TA9600.
IRFF220
TA9600
TB334
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IRF620
Abstract: TA9600 TB334 transistor irf620
Text: IRF620 Data Sheet January 2002 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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PDF
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IRF620
TA9600.
IRF620
TA9600
TB334
transistor irf620
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Untitled
Abstract: No abstract text available
Text: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFF220,
IRFF221,
IRFF222,
IRFF223
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Untitled
Abstract: No abstract text available
Text: IRF620 Semiconductor D ata S h eet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET 1577.3 Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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PDF
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IRF620
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ifr220
Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
FU221,
IRFU222
RFR220,
RFR221,
RFR222,
ifr220
IFU220
IRFU221
IRFU222
ifu221
IRFR222
IFR221
ta96
IRFR220
irfu220
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Untitled
Abstract: No abstract text available
Text: w vys S IRF620, IRF621, IRF622, IRF623 S em icon du cto r y y 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF620,
IRF621,
IRF622,
IRF623
RF622,
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FF220
Abstract: No abstract text available
Text: h a r r is IRFF220, IRFF221, IRFF222, IRFF223 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRFF220,
IRFF221,
IRFF222,
IRFF223
TA9600.
RFF220,
RFF221,
RFF222,
RFF223
FF220
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ifr220
Abstract: No abstract text available
Text: IRFR220, IR FU220 Semiconductor July 1999 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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PDF
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IRFR220,
FU220
IRFU220
ifr220
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irf620
Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
Text: IRF620, IRF621, IRF622, IRF623 h a r r is 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRF620,
IRF621,
IRF622,
IRF623
TA9600.
RF621,
RF622,
RF623
irf620
IRF620 HARRIS
IFR622
1RF621
irf623
irf622
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