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    g20n60c3d

    Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
    Text: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60c3d equivalent LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3

    G20N60C3D

    Abstract: HGTG20N60C3D RHRP3060 TA49063 TA49178 TA49179
    Text: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) G20N60C3D RHRP3060 TA49063 TA49178 TA49179

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g20n60c3d

    Abstract: g20n60 HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 N-CHANNEL 45A TO-247 POWER MOSFET g20n60c3d equivalent
    Text: HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60 LD26 RHRP3060 TA49063 TA49178 N-CHANNEL 45A TO-247 POWER MOSFET g20n60c3d equivalent

    g20n60c3d

    Abstract: Transistor No C110 G20N60C g20n60c3d equivalent LG 631 IC TA49178 transistor C110 LG 631 TA49179 HGTG20N60C3D
    Text: HGTG20N60C3D in t e r r ii J a n u a ry . m D ata S h eet 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG20N60C3D HGTG20N60C3D TA49178. RHRP3060 TA49063) g20n60c3d Transistor No C110 G20N60C g20n60c3d equivalent LG 631 IC TA49178 transistor C110 LG 631 TA49179