Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER
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Original
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PDF
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OT-23
BSR15
BSR16
C-120
BAV70REV
071105E
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZ950UPE
DFN1006-3
OT883)
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MARKING CODE SMD IC
Abstract: No abstract text available
Text: 83B PMBT3904MB SO T8 40 V, 200 mA NPN switching transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.
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PDF
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PMBT3904MB
OT883B
PMBT3906MB.
AEC-Q101
MARKING CODE SMD IC
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marking t8 sot-23
Abstract: T8 SOT23 BSR15 BSR16
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 Pin configuration 1 = BASE 2 = EMITTER
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Original
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PDF
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OT-23
BSR15
BSR16
C-120
BAV70REV
071105E
marking t8 sot-23
T8 SOT23
BSR15
BSR16
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZ350UPE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZ290UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZ950UPE
DFN1006-3
OT883)
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transistor smd wz
Abstract: No abstract text available
Text: SO T8 83 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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NX7002BKM
DFN1006-3
OT883)
transistor smd wz
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZ370UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMZ600UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZ600UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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PDF
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OT-23
BSR15
BSR16
C-120
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Untitled
Abstract: No abstract text available
Text: SO T8 9 PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 SC-62/TO-243 SurfaceMounted Device (SMD) plastic package. PNP complement: PXT2907A 2. Features and benefits
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PXT2222A
SC-62/TO-243)
PXT2907A
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BSR15
Abstract: BSR16
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR15 BSR16 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BSR15 = T7 BSR16 = T8 PACKAGE OUTLINE DETAILS
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OT-23
BSR15
BSR16
C-120
BSR15
BSR16
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bc847x
Abstract: BC847XMB BC847AMB MARKING CODE SMD IC BC847BMB
Text: 83B BC847xMB series SO T8 45 V, 100 mA NPN general-purpose transistors Rev. 1 — 5 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.
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BC847xMB
OT883B
BC847AMB
BC857AMB
BC847BMB
BC857BMB
BC847CMB
bc847x
BC847AMB
MARKING CODE SMD IC
BC847BMB
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMZB600UNE
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PDF
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PMZB950UPE
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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Original
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PDF
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PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
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marking code a02 SMD Transistor
Abstract: MARKING CODE SMD IC A08 A08 smd transistor
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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Original
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PDF
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PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
marking code a02 SMD Transistor
MARKING CODE SMD IC A08
A08 smd transistor
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BC857AMB
Abstract: MARKING CODE SMD IC SMD NPN
Text: 83B BC857xMB series SO T8 45 V, 100 mA PNP general-purpose transistors Rev. 1 — 21 February 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.
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BC857xMB
OT883B
BC857AMB
OT883B
BC847AMB
BC857BMB
BC847BMB
BC857CMB
BC857AMB
MARKING CODE SMD IC
SMD NPN
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Untitled
Abstract: No abstract text available
Text: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC124TMB
DFN1006B-3
OT883B)
PDTA124TMB.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 83B PDTC144TMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTC144TMB
DFN1006B-3
OT883B)
PDTA144TMB.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 83B PDTC115TMB SO T8 NPN resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTC115TMB
DFN1006B-3
OT883B)
PDTA115TMB.
AEC-Q101
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2d SMD PNP TRANSISTOR
Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89
Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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Original
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PDF
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PXTA92
SC-62)
PXTA42.
AEC-Q101
2d SMD PNP TRANSISTOR
TRANSISTOR SMD MARKING CODE 2d
smd transistor marking code 24
smd TRANSISTOR code marking 2d
SMD TRANSISTOR MARKING 2D
"marking Code" V2 sot89
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