0C340
Abstract: 0L3492N-3 0CM243
Text: PRODUCT LINE QLD2203 -[ b OLD221Q PRODUCT UNE PHOTOSENSORS Silicon Planer Photodiodes | 0D44L Silicon NPN Epitaxial Planer Phototransistors T34 T35L T36 T55L Digital Output Photodetectors 0IP101 PRODUCT LINE PHOTOCOUPLERS j Photocouplers -[ 0C340 QC360 0C701
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QLD2203
OLD221Q
0D44L
0IP101
0C340
QC360
0C701
0CS30
0CS31
OCS32
0L3492N-3
0CM243
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MCM63Z736
Abstract: CY7C1350 IDT71V546
Text: ^ C YPR ESS CY7C135° 128Kx36 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to Z B T™ d e vic es ID T 71V 546 , M T55L 128L 36P , and M C M 6 3Z 73 6 • S u p p o rts 14 3 -M H z bus o p e ra tio n s w ith zero w a it states
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CY7C1350
128Kx36
IDT71V546,
MT55L128L36P,
MCM63Z736
143-MHz
133-MHz
100-MHz
80-MHz
MCM63Z736
CY7C1350
IDT71V546
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Photosensors
Abstract: T55L
Text: E2ITO1i-27-32 O K I electronic components T55L Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
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E2ITO1i-27-32
Photosensors
T55L
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Untitled
Abstract: No abstract text available
Text: O K I electronic components T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
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b72M240
L724240
b72424Q
b72M2M0
b7E4E40
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LED Tr
Abstract: No abstract text available
Text: O K I electronic components T55L_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor makes it a highly sensitive pho todetector. High reliability is ensured by a hermetically sealed TO-18 package.
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1000Lx
130nsec)
LED Tr
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PHOTO SENSORS
Abstract: diagram ta 306 ic 307 ex photo sensor 700 T55L photo resistance
Text: O K I electronic com ponents T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
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b72M240
b724H40
P4240
b72H2M0
b7E4E40
0010T2Ã
PHOTO SENSORS
diagram ta 306
ic 307 ex
photo sensor 700
T55L
photo resistance
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CY7C1333
Abstract: No abstract text available
Text: CYPRESS _ CY7C1333 6~Kx3? Flow-Thru SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic e M T 55L 64 L 32F • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes
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MT55L64L32F
66-MHz
50-MHz
100-pin
CY7C1333
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11CTQ050
Abstract: 9CTQ040 11CTQ040 80SG045 11CTQ060 D0204AR 18TQ030 11CTQ030 30CTQ030 11CTQ090
Text: INTE RNA TIONAL R E C T I F I E R HE D | 4355455 □010020 fi Schottky Rectifiers T ~ ?>-£ o li 5.0 TO 30 AMPS !F AV TC VRWM VFH @ «FM (A) !RM @ Tj — 125°C & Rated VRWM Max. Tj (V) (A) 5QSQ10Q 60 80 90 100 5 5 5 5 92 92 92 92 0.52 0.52 0.52 0.52 13
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50SQ060
5OSQO80
50SQ090
5QSQ10Q
80SQ030
80SQ035
80SQ040
80SG045
6TQ030
6TQ040
11CTQ050
9CTQ040
11CTQ040
11CTQ060
D0204AR
18TQ030
11CTQ030
30CTQ030
11CTQ090
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Untitled
Abstract: No abstract text available
Text: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU T55L128L18F, T55L64L32F, T55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
55L128L18F
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9436a
Abstract: No abstract text available
Text: ADVANCE T55L128L18P, T55L64L32P, T55L64L36P 2.25Mb ZBT SRAM 3 .3V V od, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns
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12BKx
MT55L128L18P
9436a
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Untitled
Abstract: No abstract text available
Text: ADVANCE 12 8 K x 18, 64K x 32/ 36 LV T T L , P I P E L I N E D Z B T S R A M MICRON I TECHNOLOGY, INC. T55L128L18P, T55L64L32P, T55L64L36P 2.25Mb ZBTSRAM +3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
100-PIN
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Photo Relays
Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Text: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L
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OLD122
OLD123
OLD124
OLD125
OLD127
OLD222
OLD222H
OLD223
OLD224
OLD225
Photo Relays
OCS37
OCS32
OC40
ocm220
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Untitled
Abstract: No abstract text available
Text: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, FLOW-THROUGH ZBT SRAM d R M h H - .U IV I U T55L256L18F, T55L128L32F, T55L128L36F ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •
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MT55L256L18F,
MT55L128L32F,
MT55L128L36F
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43ac
Abstract: e11011
Text: fax id: 1101 CY7C1352 PRELIMINARY 256K x18 Pipelined SRAM with NoBL Architecture Features • Low s ta n d b y p ow er • Pin c o m p a tib le and fu n c tio n a lly e q u iv a le n t to ZBT™ d e vic es M C M 6 3Z 81 8 and M T 55L 25 6L 18 P • S u p p o rts 14 3 -M H z bus o p e ra tio n s w ith zero w a it states
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CY7C1352
43ac
e11011
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM MICRON I T O tW Q L ttffi INC. T55L128L18F, T55L64L32F, T55L64L36F 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
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Untitled
Abstract: No abstract text available
Text: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM T55L128L18F, T55L64L32F, T55L64L36F 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
100-pin
MT55L128L18FT-X
MT55L64L32FT-X
MT55L64L36FT-X
x32/36
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OLD122
Abstract: OC340 OD121 357 photo od43l T34L OC40 1r1h
Text: OUTLINE DIMENSIONS Unit : mm 1. Light-Emitting Diode OLD122 O L D 123 05.5*“ N - — •- H 04.6iat * ► Flat glass TO-18 stem 2-00.45 r I 2.54 1. Cathode 2. Anode (case) 108 -•OUTLINE DIMENSIONS# O LD 125 O LD 124 N 0 3 .0 * ° 20 — -►
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OLD122
C987654321C
OLD122
OC340
OD121
357 photo
od43l
T34L
OC40
1r1h
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82C59A-2
Abstract: 8085A-2 8259A-2 UM82C59A-2 55bB
Text: UNICORN MICROELECTRONICS 1 2 7 0 7 0 5 QOQOIM'Ì Q • 24 E D il I ff* 8 £3-33-13 UM82C59A-2 CM O S Programmable Interrupt Controller Features * 80C86/88 and 8080/85/86/88 compatible Pin compatible with NMOS 8259A-2 ■ Eight-Jevel priority controller Fully static design
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UM82C59A-2
259A-2
80C86/88
28-lead
UM82C59A-2
UM82C59A-2.
82C59A-2
8085A-2
8259A-2
55bB
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM MICRON I T O tW Q L ttffi INC. T55L128L18P, T55L64L32P, T55L64L36P 2Mb ZBT SRAM 3.3V V dd, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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MT55L128
Abstract: No abstract text available
Text: AD VA NC E 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MICRON U TECHNOLOGY, INC. T55L256L18F, T55L128L32F, T55L128L36F 4.5Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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MT55L256L18F,
MT55L128L32F,
MT55L128L36F
100-PIN
MT55L128
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Untitled
Abstract: No abstract text available
Text: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM T55L128L18F, T55L64L32F, T55L64L36F 2.25Mb ZBTSRAM 3 .3 V V d d , Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
100-PIN
MT55L128L18F
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D6510
Abstract: No abstract text available
Text: ADVANCE 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM T55L256L18F, T55L128L32F, T55L128L36F 4.5Mb ZBTSRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization Fast cycle times: 10,11 and 12ns
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Untitled
Abstract: No abstract text available
Text: fax id: 1088 " C YPR BSS PRELIMINARY CY7C1333 64Kx32 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evice M T 55L 64 L 32F • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes
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CY7C1333
64Kx32
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CY7C1353
Abstract: CY7C1353-66AC MCM63Z819
Text: / CY7C1353 H Y P R F .S S ^ = 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic es M C M 6 3Z 81 9 and M T 55L 25 6L 18 F S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes
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CY7C1353
256Kx18
MCM63Z819
MT55L256L18F
66-MHz
50-MHz
40-MHz
CY7C1353
CY7C1353-66AC
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